JP3898278B2 - 炭化ケイ素単結晶の製造方法及びその製造装置 - Google Patents

炭化ケイ素単結晶の製造方法及びその製造装置 Download PDF

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JP3898278B2
JP3898278B2 JP11881797A JP11881797A JP3898278B2 JP 3898278 B2 JP3898278 B2 JP 3898278B2 JP 11881797 A JP11881797 A JP 11881797A JP 11881797 A JP11881797 A JP 11881797A JP 3898278 B2 JP3898278 B2 JP 3898278B2
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silicon carbide
raw material
graphite
single crystal
carbide single
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JPH10291899A5 (enExample
JPH10291899A (ja
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直樹 小柳
勇 山本
邦雄 小巻
茂弘 西野
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Resonac Holdings Corp
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Showa Denko KK
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP11881797A 1997-04-21 1997-04-21 炭化ケイ素単結晶の製造方法及びその製造装置 Expired - Fee Related JP3898278B2 (ja)

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JP11881797A JP3898278B2 (ja) 1997-04-21 1997-04-21 炭化ケイ素単結晶の製造方法及びその製造装置

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JP11881797A JP3898278B2 (ja) 1997-04-21 1997-04-21 炭化ケイ素単結晶の製造方法及びその製造装置

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JPH10291899A JPH10291899A (ja) 1998-11-04
JPH10291899A5 JPH10291899A5 (enExample) 2004-12-09
JP3898278B2 true JP3898278B2 (ja) 2007-03-28

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EP2415911A4 (en) * 2009-04-03 2013-04-10 Bridgestone Corp METHOD OF PREPARING A SILICON CARBIDE SINGLE CRYSTAL
US12322087B1 (en) 2024-05-24 2025-06-03 Wolfspeed, Inc. Multi-scale autoencoders for semiconductor workpiece understanding
US12454768B1 (en) 2024-11-08 2025-10-28 Wolfspeed, Inc. Hybrid seed structure for crystal growth system

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WO2000039372A1 (en) * 1998-12-25 2000-07-06 Showa Denko K. K. Method for growing single crystal of silicon carbide
JP4230035B2 (ja) * 1998-12-25 2009-02-25 昭和電工株式会社 炭化珪素単結晶およびその製造方法
JP4691291B2 (ja) 1999-07-07 2011-06-01 エスアイクリスタル アクチエンゲゼルシャフト 箔で内張りされた坩堝を有するＳｉＣ単結晶昇華成長装置
US6508880B2 (en) * 2000-02-15 2003-01-21 The Fox Group, Inc. Apparatus for growing low defect density silicon carbide
JP4619567B2 (ja) * 2001-04-10 2011-01-26 株式会社ブリヂストン 炭化ケイ素単結晶及びその製造方法
US7553373B2 (en) 2001-06-15 2009-06-30 Bridgestone Corporation Silicon carbide single crystal and production thereof
JP4986342B2 (ja) * 2001-06-15 2012-07-25 株式会社ブリヂストン 炭化ケイ素単結晶及びその製造方法
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand
JP4708746B2 (ja) * 2004-09-02 2011-06-22 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
JP2008120617A (ja) * 2006-11-09 2008-05-29 Bridgestone Corp 炭化珪素単結晶の製造方法
KR100848810B1 (ko) 2007-08-03 2008-07-28 한국전기연구원 단결정 성장 방법 및 그 장치
JP5102697B2 (ja) * 2008-05-21 2012-12-19 株式会社ブリヂストン 炭化珪素単結晶の製造方法
DE102009009614A1 (de) 2008-12-24 2010-07-01 Sicrystal Ag Herstellungsverfahren für einen SiC-Volumeneinkristall und SiC-Substrat mit wenigen Kohlenstoffeinschlüssen
JP5779171B2 (ja) * 2009-03-26 2015-09-16 トゥー‐シックス・インコーポレイテッド ＳｉＣ単結晶の昇華成長方法及び装置
JP5560862B2 (ja) * 2010-04-07 2014-07-30 新日鐵住金株式会社 炭化珪素単結晶インゴットの製造装置
DE102010029755B4 (de) * 2010-06-07 2023-09-21 Sicrystal Gmbh Herstellungsverfahren für einen SiC-Volumeneinkristall ohne Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung
KR20120131016A (ko) * 2011-05-24 2012-12-04 엘지이노텍 주식회사 잉곳 제조 장치
KR20120136219A (ko) * 2011-06-08 2012-12-18 엘지이노텍 주식회사 잉곳 제조 장치
KR20120138445A (ko) * 2011-06-15 2012-12-26 엘지이노텍 주식회사 잉곳 제조 장치
KR20120140151A (ko) * 2011-06-20 2012-12-28 엘지이노텍 주식회사 잉곳 제조 장치
KR101882321B1 (ko) * 2011-12-26 2018-07-27 엘지이노텍 주식회사 잉곳 제조 장치
CN102534763A (zh) * 2012-01-17 2012-07-04 山东天岳先进材料科技有限公司 一种物理气相沉积法生长大尺寸碳化硅单晶的石墨坩埚及其应用
CN105518187B (zh) * 2013-09-06 2019-11-08 Gtat公司 生产大块硅碳化物的方法
DE112014004056T5 (de) 2013-09-06 2016-06-02 Gtat Corporation Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer
KR101537385B1 (ko) * 2013-12-05 2015-07-17 재단법인 포항산업과학연구원 탄화규소(SiC) 단결정 성장 방법
US10724151B2 (en) * 2014-10-31 2020-07-28 Sumitomo Electric Industries, Ltd. Device of manufacturing silicon carbide single crystal
JP2016088805A (ja) * 2014-11-05 2016-05-23 住友電気工業株式会社 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法
CN106544724B (zh) * 2016-12-09 2019-01-22 河北同光晶体有限公司 一种碳化硅单晶生长热场结构中的石墨板涂层的制备方法
US11846038B2 (en) 2018-08-30 2023-12-19 Senic Inc. Method of growing semi-insulating silicon carbide single crystal using dopant coated with a carbon-based material
CN109402731B (zh) * 2018-10-17 2021-01-15 福建北电新材料科技有限公司 一种高纯半绝缘碳化硅晶体生长装置及其方法
CN113122916A (zh) * 2021-04-25 2021-07-16 哈尔滨科友半导体产业装备与技术研究院有限公司 一种pvt法单晶批量制备装置及方法
CN113445121A (zh) * 2021-06-25 2021-09-28 哈尔滨科友半导体产业装备与技术研究院有限公司 一种减少石墨包裹物的碳化硅晶体的生长方法
CN114990689B (zh) * 2022-04-28 2024-03-22 中电化合物半导体有限公司 一种碳化硅粉料的合成方法及应用

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2415911A4 (en) * 2009-04-03 2013-04-10 Bridgestone Corp METHOD OF PREPARING A SILICON CARBIDE SINGLE CRYSTAL
US12322087B1 (en) 2024-05-24 2025-06-03 Wolfspeed, Inc. Multi-scale autoencoders for semiconductor workpiece understanding
US12454768B1 (en) 2024-11-08 2025-10-28 Wolfspeed, Inc. Hybrid seed structure for crystal growth system

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