JP3897186B2 - 化合物半導体レーザ - Google Patents

化合物半導体レーザ Download PDF

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Publication number
JP3897186B2
JP3897186B2 JP07477997A JP7477997A JP3897186B2 JP 3897186 B2 JP3897186 B2 JP 3897186B2 JP 07477997 A JP07477997 A JP 07477997A JP 7477997 A JP7477997 A JP 7477997A JP 3897186 B2 JP3897186 B2 JP 3897186B2
Authority
JP
Japan
Prior art keywords
layer
cladding layer
conductivity type
semiconductor laser
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07477997A
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English (en)
Japanese (ja)
Other versions
JPH10270792A (ja
JPH10270792A5 (enExample
Inventor
邦啓 高谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP07477997A priority Critical patent/JP3897186B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to DE69841813T priority patent/DE69841813D1/de
Priority to DE69836698T priority patent/DE69836698T2/de
Priority to KR1019997008790A priority patent/KR100362862B1/ko
Priority to EP06023105A priority patent/EP1744419B1/en
Priority to US09/402,135 priority patent/US6597716B1/en
Priority to DE1998624162 priority patent/DE69824162T2/de
Priority to EP98910983A priority patent/EP0971465B1/en
Priority to EP04009210A priority patent/EP1437809B1/en
Priority to PCT/JP1998/001308 priority patent/WO1998044606A1/ja
Publication of JPH10270792A publication Critical patent/JPH10270792A/ja
Priority to US10/465,164 priority patent/US6855570B2/en
Priority to US10/993,563 priority patent/US7042011B2/en
Publication of JPH10270792A5 publication Critical patent/JPH10270792A5/ja
Application granted granted Critical
Publication of JP3897186B2 publication Critical patent/JP3897186B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP07477997A 1997-03-27 1997-03-27 化合物半導体レーザ Expired - Fee Related JP3897186B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP07477997A JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ
EP98910983A EP0971465B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
KR1019997008790A KR100362862B1 (ko) 1997-03-27 1998-03-25 화합물 반도체 레이저
EP06023105A EP1744419B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
US09/402,135 US6597716B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
DE1998624162 DE69824162T2 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
DE69841813T DE69841813D1 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
EP04009210A EP1437809B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
PCT/JP1998/001308 WO1998044606A1 (fr) 1997-03-27 1998-03-25 Laser combine a semi-conducteur
DE69836698T DE69836698T2 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
US10/465,164 US6855570B2 (en) 1997-03-27 2003-06-18 Compound semiconductor laser
US10/993,563 US7042011B2 (en) 1997-03-27 2004-11-18 Compound semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07477997A JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006300411A Division JP3950473B2 (ja) 2006-11-06 2006-11-06 化合物半導体レーザ
JP2006313600A Division JP2007043215A (ja) 2006-11-20 2006-11-20 化合物半導体レーザ

Publications (3)

Publication Number Publication Date
JPH10270792A JPH10270792A (ja) 1998-10-09
JPH10270792A5 JPH10270792A5 (enExample) 2005-02-03
JP3897186B2 true JP3897186B2 (ja) 2007-03-22

Family

ID=13557128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07477997A Expired - Fee Related JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ

Country Status (6)

Country Link
US (3) US6597716B1 (enExample)
EP (3) EP1437809B1 (enExample)
JP (1) JP3897186B2 (enExample)
KR (1) KR100362862B1 (enExample)
DE (3) DE69836698T2 (enExample)
WO (1) WO1998044606A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683875B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP4991025B2 (ja) * 1999-06-10 2012-08-01 日亜化学工業株式会社 窒化物半導体レーザ素子
US6738403B2 (en) * 2000-04-06 2004-05-18 Fuji Photo Film Co., Ltd. Semiconductor laser element and semiconductor laser
JP4251529B2 (ja) 2001-02-14 2009-04-08 シャープ株式会社 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置
US6822272B2 (en) * 2001-07-09 2004-11-23 Nichia Corporation Multilayered reflective membrane and gallium nitride-based light emitting element
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR20030038125A (ko) * 2001-11-08 2003-05-16 엘지전자 주식회사 반도체레이저 다이오드
KR100437786B1 (ko) * 2001-11-09 2004-06-30 엘지전자 주식회사 반도체레이저 다이오드
JP4015865B2 (ja) * 2002-03-22 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP4067928B2 (ja) * 2002-09-27 2008-03-26 株式会社東芝 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法
KR100523484B1 (ko) * 2002-11-11 2005-10-24 한국전자통신연구원 전류 제한 구조를 갖는 반도체 광소자의 제조방법
WO2004059706A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
DE10261676A1 (de) * 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
KR20050042715A (ko) * 2003-11-04 2005-05-10 삼성전자주식회사 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
KR100818522B1 (ko) * 2004-08-31 2008-03-31 삼성전기주식회사 레이저 다이오드의 제조방법
JP2007115877A (ja) * 2005-10-20 2007-05-10 Fujifilm Corp 固体レーザ装置
US7440482B2 (en) 2005-11-01 2008-10-21 Nichia Corporation Nitride semiconductor laser element and method for manufacturing the same
KR100774458B1 (ko) * 2006-02-27 2007-11-08 엘지전자 주식회사 반도체 레이저 소자 및 그 제조 방법
JP4940987B2 (ja) 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
JP2007184644A (ja) * 2007-04-02 2007-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7615389B2 (en) * 2007-05-31 2009-11-10 Corning Incorporated GaN lasers on ALN substrates and methods of fabrication
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
JP5735216B2 (ja) 2009-02-27 2015-06-17 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2011009610A (ja) * 2009-06-29 2011-01-13 Sharp Corp 窒化物半導体レーザ素子及びウェハ
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
TWI890733B (zh) * 2020-02-18 2025-07-21 日商索尼半導體解決方案公司 發光裝置及發光裝置之製造方法
KR102885870B1 (ko) * 2020-09-08 2025-11-12 삼성전자주식회사 마이크로 발광 소자 및 이를 포함한 디스플레이 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085585A (ja) * 1983-10-17 1985-05-15 Nec Corp 埋め込み型半導体レ−ザ
JPH067618B2 (ja) * 1983-12-26 1994-01-26 株式会社東芝 半導体レ−ザ装置
JPS63166285A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体発光装置の製造方法
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH053376A (ja) * 1990-09-28 1993-01-08 Seiko Epson Corp 半導体レーザの製造方法
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JPH07235723A (ja) * 1994-02-23 1995-09-05 Hitachi Ltd 半導体レーザ素子
JPH0818159A (ja) 1994-04-25 1996-01-19 Hitachi Ltd 半導体レーザ素子及びその作製方法
JPH0856055A (ja) * 1994-08-11 1996-02-27 Hitachi Ltd 半導体レーザー装置
JPH0897507A (ja) * 1994-09-29 1996-04-12 Rohm Co Ltd 半導体レーザ
JP3432910B2 (ja) * 1994-09-28 2003-08-04 ローム株式会社 半導体レーザ
DE69625384T2 (de) * 1995-01-20 2003-04-17 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JPH08204285A (ja) * 1995-01-26 1996-08-09 Nec Corp 半導体レーザ及びその製造方法
US5742629A (en) * 1995-07-21 1998-04-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and production method thereof
JPH09106946A (ja) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp 半導体装置，及び半導体レーザ，並びに高電子移動度トランジスタ装置
JPH09270569A (ja) * 1996-01-25 1997-10-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US6055255A (en) * 1996-02-01 2000-04-25 Sharp Kabushiki Kaisha Semiconductor laser device and method for producing the same
US5812576A (en) * 1996-08-26 1998-09-22 Xerox Corporation Loss-guided semiconductor lasers

Also Published As

Publication number Publication date
EP1744419A2 (en) 2007-01-17
US20030206567A1 (en) 2003-11-06
WO1998044606A1 (fr) 1998-10-08
KR20010005722A (ko) 2001-01-15
KR100362862B1 (ko) 2002-12-11
JPH10270792A (ja) 1998-10-09
EP1744419A3 (en) 2007-04-04
DE69824162T2 (de) 2004-11-18
DE69824162D1 (de) 2004-07-01
EP1744419B1 (en) 2010-08-04
DE69836698T2 (de) 2007-10-31
US20050135447A1 (en) 2005-06-23
DE69841813D1 (de) 2010-09-16
EP0971465B1 (en) 2004-05-26
US6597716B1 (en) 2003-07-22
EP1437809A1 (en) 2004-07-14
DE69836698D1 (de) 2007-02-01
US6855570B2 (en) 2005-02-15
US7042011B2 (en) 2006-05-09
EP0971465A1 (en) 2000-01-12
EP0971465A4 (en) 2000-09-13
EP1437809B1 (en) 2006-12-20

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