JPH10270792A5 - - Google Patents

Info

Publication number
JPH10270792A5
JPH10270792A5 JP1997074779A JP7477997A JPH10270792A5 JP H10270792 A5 JPH10270792 A5 JP H10270792A5 JP 1997074779 A JP1997074779 A JP 1997074779A JP 7477997 A JP7477997 A JP 7477997A JP H10270792 A5 JPH10270792 A5 JP H10270792A5
Authority
JP
Japan
Prior art keywords
cladding layer
layer
conductivity type
group iii
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997074779A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10270792A (ja
JP3897186B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP07477997A external-priority patent/JP3897186B2/ja
Priority to JP07477997A priority Critical patent/JP3897186B2/ja
Priority to PCT/JP1998/001308 priority patent/WO1998044606A1/ja
Priority to EP06023105A priority patent/EP1744419B1/en
Priority to US09/402,135 priority patent/US6597716B1/en
Priority to DE1998624162 priority patent/DE69824162T2/de
Priority to DE69841813T priority patent/DE69841813D1/de
Priority to EP04009210A priority patent/EP1437809B1/en
Priority to EP98910983A priority patent/EP0971465B1/en
Priority to DE69836698T priority patent/DE69836698T2/de
Priority to KR1019997008790A priority patent/KR100362862B1/ko
Publication of JPH10270792A publication Critical patent/JPH10270792A/ja
Priority to US10/465,164 priority patent/US6855570B2/en
Priority to US10/993,563 priority patent/US7042011B2/en
Publication of JPH10270792A5 publication Critical patent/JPH10270792A5/ja
Publication of JP3897186B2 publication Critical patent/JP3897186B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP07477997A 1997-03-27 1997-03-27 化合物半導体レーザ Expired - Fee Related JP3897186B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP07477997A JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ
EP98910983A EP0971465B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
KR1019997008790A KR100362862B1 (ko) 1997-03-27 1998-03-25 화합물 반도체 레이저
EP06023105A EP1744419B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
US09/402,135 US6597716B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
DE1998624162 DE69824162T2 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
DE69841813T DE69841813D1 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
EP04009210A EP1437809B1 (en) 1997-03-27 1998-03-25 Compound semiconductor laser
PCT/JP1998/001308 WO1998044606A1 (fr) 1997-03-27 1998-03-25 Laser combine a semi-conducteur
DE69836698T DE69836698T2 (de) 1997-03-27 1998-03-25 Verbindungshalbleiterlaser
US10/465,164 US6855570B2 (en) 1997-03-27 2003-06-18 Compound semiconductor laser
US10/993,563 US7042011B2 (en) 1997-03-27 2004-11-18 Compound semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07477997A JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006300411A Division JP3950473B2 (ja) 2006-11-06 2006-11-06 化合物半導体レーザ
JP2006313600A Division JP2007043215A (ja) 2006-11-20 2006-11-20 化合物半導体レーザ

Publications (3)

Publication Number Publication Date
JPH10270792A JPH10270792A (ja) 1998-10-09
JPH10270792A5 true JPH10270792A5 (enExample) 2005-02-03
JP3897186B2 JP3897186B2 (ja) 2007-03-22

Family

ID=13557128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07477997A Expired - Fee Related JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ

Country Status (6)

Country Link
US (3) US6597716B1 (enExample)
EP (3) EP1437809B1 (enExample)
JP (1) JP3897186B2 (enExample)
KR (1) KR100362862B1 (enExample)
DE (3) DE69836698T2 (enExample)
WO (1) WO1998044606A1 (enExample)

Families Citing this family (34)

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DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683875B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP4991025B2 (ja) * 1999-06-10 2012-08-01 日亜化学工業株式会社 窒化物半導体レーザ素子
US6738403B2 (en) * 2000-04-06 2004-05-18 Fuji Photo Film Co., Ltd. Semiconductor laser element and semiconductor laser
JP4251529B2 (ja) 2001-02-14 2009-04-08 シャープ株式会社 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置
US6822272B2 (en) * 2001-07-09 2004-11-23 Nichia Corporation Multilayered reflective membrane and gallium nitride-based light emitting element
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR20030038125A (ko) * 2001-11-08 2003-05-16 엘지전자 주식회사 반도체레이저 다이오드
KR100437786B1 (ko) * 2001-11-09 2004-06-30 엘지전자 주식회사 반도체레이저 다이오드
JP4015865B2 (ja) * 2002-03-22 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP4067928B2 (ja) * 2002-09-27 2008-03-26 株式会社東芝 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法
KR100523484B1 (ko) * 2002-11-11 2005-10-24 한국전자통신연구원 전류 제한 구조를 갖는 반도체 광소자의 제조방법
WO2004059706A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
DE10261676A1 (de) * 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
KR20050042715A (ko) * 2003-11-04 2005-05-10 삼성전자주식회사 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
KR100818522B1 (ko) * 2004-08-31 2008-03-31 삼성전기주식회사 레이저 다이오드의 제조방법
JP2007115877A (ja) * 2005-10-20 2007-05-10 Fujifilm Corp 固体レーザ装置
US7440482B2 (en) 2005-11-01 2008-10-21 Nichia Corporation Nitride semiconductor laser element and method for manufacturing the same
KR100774458B1 (ko) * 2006-02-27 2007-11-08 엘지전자 주식회사 반도체 레이저 소자 및 그 제조 방법
JP4940987B2 (ja) 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
JP2007184644A (ja) * 2007-04-02 2007-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7615389B2 (en) * 2007-05-31 2009-11-10 Corning Incorporated GaN lasers on ALN substrates and methods of fabrication
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
JP5735216B2 (ja) 2009-02-27 2015-06-17 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2011009610A (ja) * 2009-06-29 2011-01-13 Sharp Corp 窒化物半導体レーザ素子及びウェハ
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
TWI890733B (zh) * 2020-02-18 2025-07-21 日商索尼半導體解決方案公司 發光裝置及發光裝置之製造方法
KR102885870B1 (ko) * 2020-09-08 2025-11-12 삼성전자주식회사 마이크로 발광 소자 및 이를 포함한 디스플레이 장치

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JPS6085585A (ja) * 1983-10-17 1985-05-15 Nec Corp 埋め込み型半導体レ−ザ
JPH067618B2 (ja) * 1983-12-26 1994-01-26 株式会社東芝 半導体レ−ザ装置
JPS63166285A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体発光装置の製造方法
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH053376A (ja) * 1990-09-28 1993-01-08 Seiko Epson Corp 半導体レーザの製造方法
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JPH07235723A (ja) * 1994-02-23 1995-09-05 Hitachi Ltd 半導体レーザ素子
JPH0818159A (ja) 1994-04-25 1996-01-19 Hitachi Ltd 半導体レーザ素子及びその作製方法
JPH0856055A (ja) * 1994-08-11 1996-02-27 Hitachi Ltd 半導体レーザー装置
JPH0897507A (ja) * 1994-09-29 1996-04-12 Rohm Co Ltd 半導体レーザ
JP3432910B2 (ja) * 1994-09-28 2003-08-04 ローム株式会社 半導体レーザ
DE69625384T2 (de) * 1995-01-20 2003-04-17 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JPH08204285A (ja) * 1995-01-26 1996-08-09 Nec Corp 半導体レーザ及びその製造方法
US5742629A (en) * 1995-07-21 1998-04-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and production method thereof
JPH09106946A (ja) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp 半導体装置，及び半導体レーザ，並びに高電子移動度トランジスタ装置
JPH09270569A (ja) * 1996-01-25 1997-10-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US6055255A (en) * 1996-02-01 2000-04-25 Sharp Kabushiki Kaisha Semiconductor laser device and method for producing the same
US5812576A (en) * 1996-08-26 1998-09-22 Xerox Corporation Loss-guided semiconductor lasers

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