KR100362862B1 - 화합물 반도체 레이저 - Google Patents

화합물 반도체 레이저 Download PDF

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Publication number
KR100362862B1
KR100362862B1 KR1019997008790A KR19997008790A KR100362862B1 KR 100362862 B1 KR100362862 B1 KR 100362862B1 KR 1019997008790 A KR1019997008790 A KR 1019997008790A KR 19997008790 A KR19997008790 A KR 19997008790A KR 100362862 B1 KR100362862 B1 KR 100362862B1
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KR
South Korea
Prior art keywords
layer
semiconductor laser
compound semiconductor
buried
group iii
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Expired - Lifetime
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KR1019997008790A
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English (en)
Korean (ko)
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KR20010005722A (ko
Inventor
구니히로 다까따니
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샤프 가부시키가이샤
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Publication of KR20010005722A publication Critical patent/KR20010005722A/ko
Application granted granted Critical
Publication of KR100362862B1 publication Critical patent/KR100362862B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
KR1019997008790A 1997-03-27 1998-03-25 화합물 반도체 레이저 Expired - Lifetime KR100362862B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07477997A JP3897186B2 (ja) 1997-03-27 1997-03-27 化合物半導体レーザ
JP1997-074779 1997-03-27

Publications (2)

Publication Number Publication Date
KR20010005722A KR20010005722A (ko) 2001-01-15
KR100362862B1 true KR100362862B1 (ko) 2002-12-11

Family

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Family Applications (1)

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KR1019997008790A Expired - Lifetime KR100362862B1 (ko) 1997-03-27 1998-03-25 화합물 반도체 레이저

Country Status (6)

Country Link
US (3) US6597716B1 (enExample)
EP (3) EP1437809B1 (enExample)
JP (1) JP3897186B2 (enExample)
KR (1) KR100362862B1 (enExample)
DE (3) DE69836698T2 (enExample)
WO (1) WO1998044606A1 (enExample)

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DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683875B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP4991025B2 (ja) * 1999-06-10 2012-08-01 日亜化学工業株式会社 窒化物半導体レーザ素子
US6738403B2 (en) * 2000-04-06 2004-05-18 Fuji Photo Film Co., Ltd. Semiconductor laser element and semiconductor laser
JP4251529B2 (ja) 2001-02-14 2009-04-08 シャープ株式会社 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置
US6822272B2 (en) * 2001-07-09 2004-11-23 Nichia Corporation Multilayered reflective membrane and gallium nitride-based light emitting element
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR20030038125A (ko) * 2001-11-08 2003-05-16 엘지전자 주식회사 반도체레이저 다이오드
KR100437786B1 (ko) * 2001-11-09 2004-06-30 엘지전자 주식회사 반도체레이저 다이오드
JP4015865B2 (ja) * 2002-03-22 2007-11-28 松下電器産業株式会社 半導体装置の製造方法
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
JP4067928B2 (ja) * 2002-09-27 2008-03-26 株式会社東芝 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法
KR100523484B1 (ko) * 2002-11-11 2005-10-24 한국전자통신연구원 전류 제한 구조를 갖는 반도체 광소자의 제조방법
WO2004059706A2 (en) * 2002-12-20 2004-07-15 Cree, Inc. Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
DE10261676A1 (de) * 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
KR20050042715A (ko) * 2003-11-04 2005-05-10 삼성전자주식회사 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
KR100818522B1 (ko) * 2004-08-31 2008-03-31 삼성전기주식회사 레이저 다이오드의 제조방법
JP2007115877A (ja) * 2005-10-20 2007-05-10 Fujifilm Corp 固体レーザ装置
US7440482B2 (en) 2005-11-01 2008-10-21 Nichia Corporation Nitride semiconductor laser element and method for manufacturing the same
KR100774458B1 (ko) * 2006-02-27 2007-11-08 엘지전자 주식회사 반도체 레이저 소자 및 그 제조 방법
JP4940987B2 (ja) 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US7773650B2 (en) 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
JP2007184644A (ja) * 2007-04-02 2007-07-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7615389B2 (en) * 2007-05-31 2009-11-10 Corning Incorporated GaN lasers on ALN substrates and methods of fabrication
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
JP5735216B2 (ja) 2009-02-27 2015-06-17 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2011009610A (ja) * 2009-06-29 2011-01-13 Sharp Corp 窒化物半導体レーザ素子及びウェハ
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
TWI890733B (zh) * 2020-02-18 2025-07-21 日商索尼半導體解決方案公司 發光裝置及發光裝置之製造方法
KR102885870B1 (ko) * 2020-09-08 2025-11-12 삼성전자주식회사 마이크로 발광 소자 및 이를 포함한 디스플레이 장치

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US4855250A (en) * 1986-12-26 1989-08-08 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor laser with autodoping control
JPH0745908A (ja) * 1993-07-28 1995-02-14 Sony Corp 半導体レーザー
JPH08204285A (ja) * 1995-01-26 1996-08-09 Nec Corp 半導体レーザ及びその製造方法

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JPH08204285A (ja) * 1995-01-26 1996-08-09 Nec Corp 半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
EP1744419A2 (en) 2007-01-17
US20030206567A1 (en) 2003-11-06
WO1998044606A1 (fr) 1998-10-08
KR20010005722A (ko) 2001-01-15
JPH10270792A (ja) 1998-10-09
EP1744419A3 (en) 2007-04-04
JP3897186B2 (ja) 2007-03-22
DE69824162T2 (de) 2004-11-18
DE69824162D1 (de) 2004-07-01
EP1744419B1 (en) 2010-08-04
DE69836698T2 (de) 2007-10-31
US20050135447A1 (en) 2005-06-23
DE69841813D1 (de) 2010-09-16
EP0971465B1 (en) 2004-05-26
US6597716B1 (en) 2003-07-22
EP1437809A1 (en) 2004-07-14
DE69836698D1 (de) 2007-02-01
US6855570B2 (en) 2005-02-15
US7042011B2 (en) 2006-05-09
EP0971465A1 (en) 2000-01-12
EP0971465A4 (en) 2000-09-13
EP1437809B1 (en) 2006-12-20

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