DE69836698T2 - Verbindungshalbleiterlaser - Google Patents
Verbindungshalbleiterlaser Download PDFInfo
- Publication number
- DE69836698T2 DE69836698T2 DE69836698T DE69836698T DE69836698T2 DE 69836698 T2 DE69836698 T2 DE 69836698T2 DE 69836698 T DE69836698 T DE 69836698T DE 69836698 T DE69836698 T DE 69836698T DE 69836698 T2 DE69836698 T2 DE 69836698T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- cladding layer
- buried
- cladding
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 150000001875 compounds Chemical class 0.000 title claims description 24
- 238000005253 cladding Methods 0.000 claims description 130
- 238000005530 etching Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 3
- -1 Sb 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims description 3
- 230000002411 adverse Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07477997A JP3897186B2 (ja) | 1997-03-27 | 1997-03-27 | 化合物半導体レーザ |
| JP7477997 | 1997-03-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69836698D1 DE69836698D1 (de) | 2007-02-01 |
| DE69836698T2 true DE69836698T2 (de) | 2007-10-31 |
Family
ID=13557128
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69836698T Expired - Lifetime DE69836698T2 (de) | 1997-03-27 | 1998-03-25 | Verbindungshalbleiterlaser |
| DE69841813T Expired - Lifetime DE69841813D1 (de) | 1997-03-27 | 1998-03-25 | Verbindungshalbleiterlaser |
| DE1998624162 Expired - Lifetime DE69824162T2 (de) | 1997-03-27 | 1998-03-25 | Verbindungshalbleiterlaser |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69841813T Expired - Lifetime DE69841813D1 (de) | 1997-03-27 | 1998-03-25 | Verbindungshalbleiterlaser |
| DE1998624162 Expired - Lifetime DE69824162T2 (de) | 1997-03-27 | 1998-03-25 | Verbindungshalbleiterlaser |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6597716B1 (enExample) |
| EP (3) | EP1437809B1 (enExample) |
| JP (1) | JP3897186B2 (enExample) |
| KR (1) | KR100362862B1 (enExample) |
| DE (3) | DE69836698T2 (enExample) |
| WO (1) | WO1998044606A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69835216T2 (de) | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | Halbleitervorrichtung aus einer nitridverbindung |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| KR100683875B1 (ko) | 1999-03-04 | 2007-02-15 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 레이저소자 |
| JP4991025B2 (ja) * | 1999-06-10 | 2012-08-01 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| US6738403B2 (en) * | 2000-04-06 | 2004-05-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser element and semiconductor laser |
| JP4251529B2 (ja) | 2001-02-14 | 2009-04-08 | シャープ株式会社 | 窒化物半導体レーザ素子およびそれを用いた光学式情報再生装置 |
| US6822272B2 (en) * | 2001-07-09 | 2004-11-23 | Nichia Corporation | Multilayered reflective membrane and gallium nitride-based light emitting element |
| US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
| US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
| KR20030038125A (ko) * | 2001-11-08 | 2003-05-16 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
| KR100437786B1 (ko) * | 2001-11-09 | 2004-06-30 | 엘지전자 주식회사 | 반도체레이저 다이오드 |
| JP4015865B2 (ja) * | 2002-03-22 | 2007-11-28 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP4615179B2 (ja) * | 2002-06-27 | 2011-01-19 | 古河電気工業株式会社 | 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器 |
| JP4067928B2 (ja) * | 2002-09-27 | 2008-03-26 | 株式会社東芝 | 窒化ガリウム系化合物半導体素子の製造方法及び窒化ガリウム系化合物半導体層の加工方法 |
| KR100523484B1 (ko) * | 2002-11-11 | 2005-10-24 | 한국전자통신연구원 | 전류 제한 구조를 갖는 반도체 광소자의 제조방법 |
| WO2004059706A2 (en) * | 2002-12-20 | 2004-07-15 | Cree, Inc. | Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices |
| DE10261676A1 (de) * | 2002-12-31 | 2004-07-22 | Osram Opto Semiconductors Gmbh | Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht |
| KR20050042715A (ko) * | 2003-11-04 | 2005-05-10 | 삼성전자주식회사 | 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법 |
| US7791061B2 (en) * | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
| KR100818522B1 (ko) * | 2004-08-31 | 2008-03-31 | 삼성전기주식회사 | 레이저 다이오드의 제조방법 |
| JP2007115877A (ja) * | 2005-10-20 | 2007-05-10 | Fujifilm Corp | 固体レーザ装置 |
| US7440482B2 (en) | 2005-11-01 | 2008-10-21 | Nichia Corporation | Nitride semiconductor laser element and method for manufacturing the same |
| KR100774458B1 (ko) * | 2006-02-27 | 2007-11-08 | 엘지전자 주식회사 | 반도체 레이저 소자 및 그 제조 방법 |
| JP4940987B2 (ja) | 2006-03-20 | 2012-05-30 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
| US7773650B2 (en) | 2006-12-28 | 2010-08-10 | Nichia Corporation | Nitride semiconductor laser element |
| JP2007184644A (ja) * | 2007-04-02 | 2007-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7615389B2 (en) * | 2007-05-31 | 2009-11-10 | Corning Incorporated | GaN lasers on ALN substrates and methods of fabrication |
| WO2009120044A2 (ko) * | 2008-03-27 | 2009-10-01 | Song June O | 발광소자 및 그 제조방법 |
| JP5735216B2 (ja) | 2009-02-27 | 2015-06-17 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP2011009610A (ja) * | 2009-06-29 | 2011-01-13 | Sharp Corp | 窒化物半導体レーザ素子及びウェハ |
| US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
| TWI890733B (zh) * | 2020-02-18 | 2025-07-21 | 日商索尼半導體解決方案公司 | 發光裝置及發光裝置之製造方法 |
| KR102885870B1 (ko) * | 2020-09-08 | 2025-11-12 | 삼성전자주식회사 | 마이크로 발광 소자 및 이를 포함한 디스플레이 장치 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6085585A (ja) * | 1983-10-17 | 1985-05-15 | Nec Corp | 埋め込み型半導体レ−ザ |
| JPH067618B2 (ja) * | 1983-12-26 | 1994-01-26 | 株式会社東芝 | 半導体レ−ザ装置 |
| JPS63166285A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 半導体発光装置の製造方法 |
| JP3015371B2 (ja) * | 1988-01-20 | 2000-03-06 | 株式会社東芝 | 半導体レーザ |
| JPH053376A (ja) * | 1990-09-28 | 1993-01-08 | Seiko Epson Corp | 半導体レーザの製造方法 |
| JP3116675B2 (ja) * | 1993-07-28 | 2000-12-11 | ソニー株式会社 | 半導体レーザー |
| JPH07235723A (ja) * | 1994-02-23 | 1995-09-05 | Hitachi Ltd | 半導体レーザ素子 |
| JPH0818159A (ja) | 1994-04-25 | 1996-01-19 | Hitachi Ltd | 半導体レーザ素子及びその作製方法 |
| JPH0856055A (ja) * | 1994-08-11 | 1996-02-27 | Hitachi Ltd | 半導体レーザー装置 |
| JPH0897507A (ja) * | 1994-09-29 | 1996-04-12 | Rohm Co Ltd | 半導体レーザ |
| JP3432910B2 (ja) * | 1994-09-28 | 2003-08-04 | ローム株式会社 | 半導体レーザ |
| DE69625384T2 (de) * | 1995-01-20 | 2003-04-17 | Matsushita Electric Industrial Co., Ltd. | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
| JPH08204285A (ja) * | 1995-01-26 | 1996-08-09 | Nec Corp | 半導体レーザ及びその製造方法 |
| US5742629A (en) * | 1995-07-21 | 1998-04-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and production method thereof |
| JPH09106946A (ja) * | 1995-10-11 | 1997-04-22 | Mitsubishi Electric Corp | 半導体装置，及び半導体レーザ，並びに高電子移動度トランジスタ装置 |
| JPH09270569A (ja) * | 1996-01-25 | 1997-10-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
| US6055255A (en) * | 1996-02-01 | 2000-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
| US5812576A (en) * | 1996-08-26 | 1998-09-22 | Xerox Corporation | Loss-guided semiconductor lasers |
-
1997
- 1997-03-27 JP JP07477997A patent/JP3897186B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-25 DE DE69836698T patent/DE69836698T2/de not_active Expired - Lifetime
- 1998-03-25 EP EP04009210A patent/EP1437809B1/en not_active Expired - Lifetime
- 1998-03-25 EP EP98910983A patent/EP0971465B1/en not_active Expired - Lifetime
- 1998-03-25 EP EP06023105A patent/EP1744419B1/en not_active Expired - Lifetime
- 1998-03-25 KR KR1019997008790A patent/KR100362862B1/ko not_active Expired - Lifetime
- 1998-03-25 US US09/402,135 patent/US6597716B1/en not_active Expired - Lifetime
- 1998-03-25 DE DE69841813T patent/DE69841813D1/de not_active Expired - Lifetime
- 1998-03-25 WO PCT/JP1998/001308 patent/WO1998044606A1/ja not_active Ceased
- 1998-03-25 DE DE1998624162 patent/DE69824162T2/de not_active Expired - Lifetime
-
2003
- 2003-06-18 US US10/465,164 patent/US6855570B2/en not_active Expired - Lifetime
-
2004
- 2004-11-18 US US10/993,563 patent/US7042011B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1744419A2 (en) | 2007-01-17 |
| US20030206567A1 (en) | 2003-11-06 |
| WO1998044606A1 (fr) | 1998-10-08 |
| KR20010005722A (ko) | 2001-01-15 |
| KR100362862B1 (ko) | 2002-12-11 |
| JPH10270792A (ja) | 1998-10-09 |
| EP1744419A3 (en) | 2007-04-04 |
| JP3897186B2 (ja) | 2007-03-22 |
| DE69824162T2 (de) | 2004-11-18 |
| DE69824162D1 (de) | 2004-07-01 |
| EP1744419B1 (en) | 2010-08-04 |
| US20050135447A1 (en) | 2005-06-23 |
| DE69841813D1 (de) | 2010-09-16 |
| EP0971465B1 (en) | 2004-05-26 |
| US6597716B1 (en) | 2003-07-22 |
| EP1437809A1 (en) | 2004-07-14 |
| DE69836698D1 (de) | 2007-02-01 |
| US6855570B2 (en) | 2005-02-15 |
| US7042011B2 (en) | 2006-05-09 |
| EP0971465A1 (en) | 2000-01-12 |
| EP0971465A4 (en) | 2000-09-13 |
| EP1437809B1 (en) | 2006-12-20 |
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