DE69029935T2 - Halbleiterlaser mit Grabenprofil in Form einer inversen Mesa - Google Patents

Halbleiterlaser mit Grabenprofil in Form einer inversen Mesa

Info

Publication number
DE69029935T2
DE69029935T2 DE69029935T DE69029935T DE69029935T2 DE 69029935 T2 DE69029935 T2 DE 69029935T2 DE 69029935 T DE69029935 T DE 69029935T DE 69029935 T DE69029935 T DE 69029935T DE 69029935 T2 DE69029935 T2 DE 69029935T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
trench profile
inverse mesa
mesa
inverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029935T
Other languages
English (en)
Other versions
DE69029935D1 (de
Inventor
Koichi Nitta
Yukio Watanabe
Yukie Nishikawa
Masaki Okajima
Genichi Hatakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4596490A external-priority patent/JPH03250685A/ja
Priority claimed from JP8466990A external-priority patent/JP2909133B2/ja
Priority claimed from JP8466890A external-priority patent/JP2914711B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69029935D1 publication Critical patent/DE69029935D1/de
Application granted granted Critical
Publication of DE69029935T2 publication Critical patent/DE69029935T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69029935T 1990-02-28 1990-12-31 Halbleiterlaser mit Grabenprofil in Form einer inversen Mesa Expired - Fee Related DE69029935T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4596490A JPH03250685A (ja) 1990-02-28 1990-02-28 半導体レーザ装置の製造方法
JP8466990A JP2909133B2 (ja) 1990-03-30 1990-03-30 半導体レーザ装置
JP8466890A JP2914711B2 (ja) 1990-03-30 1990-03-30 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69029935D1 DE69029935D1 (de) 1997-03-27
DE69029935T2 true DE69029935T2 (de) 1997-09-04

Family

ID=27292457

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029935T Expired - Fee Related DE69029935T2 (de) 1990-02-28 1990-12-31 Halbleiterlaser mit Grabenprofil in Form einer inversen Mesa

Country Status (3)

Country Link
US (1) US5058120A (de)
EP (1) EP0444366B1 (de)
DE (1) DE69029935T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0695006B1 (de) * 1990-05-09 1998-03-04 Sharp Kabushiki Kaisha Herstellungsverfahren für eine aus Halbleiterverbindungen bestehende Laservorrichtung
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof
JPH04116993A (ja) * 1990-09-07 1992-04-17 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
US5268328A (en) * 1990-09-07 1993-12-07 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor laser
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
DE69312799T2 (de) * 1992-05-18 1998-02-12 Philips Electronics Nv Optoelektronische Halbleiteranordnung
JP2914833B2 (ja) * 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ
JPH06296060A (ja) * 1993-04-08 1994-10-21 Mitsubishi Electric Corp 半導体可視光レーザダイオードの製造方法
SE506651C2 (sv) * 1996-02-27 1998-01-26 Ericsson Telefon Ab L M Begravd heterostruktur
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
US6589805B2 (en) * 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US20050141578A1 (en) * 2003-06-20 2005-06-30 Benoit Reid Laser diode structure with blocking layer
KR100584333B1 (ko) * 2004-01-08 2006-05-26 삼성전자주식회사 반도체 레이저 장치 및 그 제조방법
EP2259346B1 (de) * 2008-03-27 2019-07-03 LG Innotek Co., Ltd. Lichtemittierendes element und herstellungsverfahren dafür
JP7166871B2 (ja) * 2018-10-18 2022-11-08 スタンレー電気株式会社 垂直共振器型発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS603181A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS61121381A (ja) * 1984-11-19 1986-06-09 Hitachi Ltd 半導体レ−ザ装置
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JP2585230B2 (ja) * 1986-09-16 1997-02-26 株式会社日立製作所 半導体レ−ザ装置
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置
JPH01134985A (ja) * 1987-11-19 1989-05-26 Mitsubishi Electric Corp 半導体レーザ装置
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置

Also Published As

Publication number Publication date
EP0444366A3 (en) 1992-01-22
DE69029935D1 (de) 1997-03-27
EP0444366A2 (de) 1991-09-04
US5058120A (en) 1991-10-15
EP0444366B1 (de) 1997-02-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee