DE69429467D1 - Halbleiteranordnung mit einer Isolationszone - Google Patents

Halbleiteranordnung mit einer Isolationszone

Info

Publication number
DE69429467D1
DE69429467D1 DE69429467T DE69429467T DE69429467D1 DE 69429467 D1 DE69429467 D1 DE 69429467D1 DE 69429467 T DE69429467 T DE 69429467T DE 69429467 T DE69429467 T DE 69429467T DE 69429467 D1 DE69429467 D1 DE 69429467D1
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
isolation zone
isolation
zone
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69429467T
Other languages
English (en)
Other versions
DE69429467T2 (de
Inventor
Toshio Sakakibara
Makio Iida
Takayuki Sugisaka
Shoji Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Application granted granted Critical
Publication of DE69429467D1 publication Critical patent/DE69429467D1/de
Publication of DE69429467T2 publication Critical patent/DE69429467T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material
DE69429467T 1993-03-10 1994-03-08 Halbleiteranordnung mit einer Isolationszone Expired - Lifetime DE69429467T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5049656A JPH06268054A (ja) 1993-03-10 1993-03-10 半導体装置

Publications (2)

Publication Number Publication Date
DE69429467D1 true DE69429467D1 (de) 2002-01-31
DE69429467T2 DE69429467T2 (de) 2002-08-08

Family

ID=12837235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429467T Expired - Lifetime DE69429467T2 (de) 1993-03-10 1994-03-08 Halbleiteranordnung mit einer Isolationszone

Country Status (4)

Country Link
US (1) US5449946A (de)
EP (1) EP0615286B1 (de)
JP (1) JPH06268054A (de)
DE (1) DE69429467T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644157A (en) * 1992-12-25 1997-07-01 Nippondenso Co., Ltd. High withstand voltage type semiconductor device having an isolation region
JP3818673B2 (ja) * 1993-03-10 2006-09-06 株式会社デンソー 半導体装置
JP2773611B2 (ja) * 1993-11-17 1998-07-09 株式会社デンソー 絶縁物分離半導体装置
US6104078A (en) * 1994-03-09 2000-08-15 Denso Corporation Design for a semiconductor device having elements isolated by insulating regions
KR970052022A (ko) * 1995-12-30 1997-07-29 김주용 에스 오 아이 기판 제조방법
TW309647B (de) * 1995-12-30 1997-07-01 Hyundai Electronics Ind
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
JP2998662B2 (ja) * 1996-11-15 2000-01-11 日本電気株式会社 半導体装置
DE19808514A1 (de) * 1997-02-28 1998-09-10 Int Rectifier Corp Halbleiterbauteil sowie Verfahren zu seiner Herstellung
JP3422209B2 (ja) * 1997-03-17 2003-06-30 株式会社デンソー 半導体装置
SE522812C2 (sv) * 1997-03-27 2004-03-09 Ericsson Telefon Ab L M Anordning och förfarande för att reducera elektriska fältkoncentrationer i elektriska komponenter
DE19800715A1 (de) * 1998-01-12 1999-07-15 Bremicker Auto Elektrik Elektrisches Halbleiterelement sowie Verfahren zur Herstellung eines Halbleiterelementes
US6150697A (en) * 1998-04-30 2000-11-21 Denso Corporation Semiconductor apparatus having high withstand voltage
JP4617527B2 (ja) 1999-04-08 2011-01-26 株式会社デンソー 回路装置
EP1073112A1 (de) 1999-07-26 2001-01-31 STMicroelectronics S.r.l. Verfahren zur Herstellung eines SOI-Wafers mittels Oxidierung von vergrabenen Hohlräumen
US6524890B2 (en) 1999-11-17 2003-02-25 Denso Corporation Method for manufacturing semiconductor device having element isolation structure
US6787872B2 (en) * 2001-06-26 2004-09-07 International Rectifier Corporation Lateral conduction superjunction semiconductor device
JP2003017704A (ja) 2001-06-29 2003-01-17 Denso Corp 半導体装置
US6791156B2 (en) * 2001-10-26 2004-09-14 Denso Corporation Semiconductor device and method for manufacturing it
KR100854077B1 (ko) * 2002-05-28 2008-08-25 페어차일드코리아반도체 주식회사 웨이퍼 본딩을 이용한 ｓｏｉ 기판 제조 방법과 이 ｓｏｉ기판을 사용한 상보형 고전압 바이폴라 트랜지스터 제조방법
JP4512497B2 (ja) * 2005-01-31 2010-07-28 イビデン株式会社 コンデンサ内蔵パッケージ基板及びその製法
DE102006013203B3 (de) 2006-03-22 2008-01-10 Infineon Technologies Ag Integrierte Halbleiteranordnung mit Rückstromkomplex zur Verringerung eines Substratstroms und Verfahren zu deren Herstellung
JP5302522B2 (ja) * 2007-07-02 2013-10-02 スパンション エルエルシー 半導体装置及びその製造方法
US7816759B2 (en) * 2008-01-09 2010-10-19 Infineon Technologies Ag Integrated circuit including isolation regions substantially through substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990102A (en) * 1974-06-28 1976-11-02 Hitachi, Ltd. Semiconductor integrated circuits and method of manufacturing the same
US4231056A (en) * 1978-10-20 1980-10-28 Harris Corporation Moat resistor ram cell
US4470062A (en) * 1979-08-31 1984-09-04 Hitachi, Ltd. Semiconductor device having isolation regions
JPS6060753A (ja) * 1983-09-14 1985-04-08 Matsushita Electronics Corp 半導体装置
US4661202A (en) * 1984-02-14 1987-04-28 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
JPS6365641A (ja) * 1986-09-05 1988-03-24 Nec Corp 半導体集積回路
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
EP0398468A3 (de) * 1989-05-16 1991-03-13 Kabushiki Kaisha Toshiba Dielektrisch isoliertes Substrat und Halbleiteranordnung mit diesem Substrat
JP2979554B2 (ja) * 1989-09-26 1999-11-15 株式会社デンソー 半導体装置の製造方法
JPH03148852A (ja) * 1989-11-06 1991-06-25 Fujitsu Ltd 半導体装置
JP3351803B2 (ja) * 1991-01-11 2002-12-03 富士通株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
EP0615286A3 (de) 1997-09-24
DE69429467T2 (de) 2002-08-08
JPH06268054A (ja) 1994-09-22
EP0615286A2 (de) 1994-09-14
EP0615286B1 (de) 2001-12-19
US5449946A (en) 1995-09-12

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