WO2001039342A1 - Element electroluminescent a semi-conducteur - Google Patents

Element electroluminescent a semi-conducteur Download PDF

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Publication number
WO2001039342A1
WO2001039342A1 PCT/JP2000/008018 JP0008018W WO0139342A1 WO 2001039342 A1 WO2001039342 A1 WO 2001039342A1 JP 0008018 W JP0008018 W JP 0008018W WO 0139342 A1 WO0139342 A1 WO 0139342A1
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WIPO (PCT)
Prior art keywords
layer
type
film
gan
compound semiconductor
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PCT/JP2000/008018
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English (en)
Japanese (ja)
Inventor
Hiroshi Yoshida
Misuzu Abe
Maho Ohara
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Sony Corporation
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Publication of WO2001039342A1 publication Critical patent/WO2001039342A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Definitions

  • the present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device which is suitably applied to a semiconductor laser or a light emitting diode using a nitride-based compound.
  • GaAs / A1 GaAs semiconductor lasers have been used as light sources for optical recording systems for compact discs (CDs) and minidiscs (MDs), and digital video discs (DVDs).
  • a semiconductor laser as a light source of an optical recording system or a system represented by a bar code reader, a GalnP / AlGalnP-based semiconductor laser is used.
  • a structure having a ridge shape as shown in FIG. 1 is becoming mainstream. That is, as shown in FIG.
  • an n-type cladding layer 102, an active layer 103, and at least a p-type A p-type layer 104 including a cladding layer is sequentially stacked, and a bridge 105 is formed on the p-type layer 104.
  • the reason for adopting such a ridge structure is that, after the formation of the ridge 105, the optical power is determined by selecting the refractive index of the semiconductor layer or insulating film embedded outside the ridge 105.
  • Laser characteristics can be improved by improving the laser characteristics, and the laser characteristics can be improved by efficiently injecting current into the lid 105 by selecting the electrical conductivity of the embedded material. Derived from (for example, Toshiaki Hara, Basics of Semiconductor Lasers, Chapter 5, Kyoritsu Publishing Co., Ltd.)
  • the general lid structure has a different semiconductor laminated structure in the vertical direction between the inside and outside of the lid 105.
  • the bridge 105 is buried by an n-type buried layer 106.
  • the confinement of light in the horizontal direction is controlled by making the effective refractive index different between the inside and outside of the lens 105. To control the horizontal optical mode or to reduce the threshold and operating current.
  • the inside of the lid 105 has electric conductivity of a substrate / n-type layer / active layer / p-type layer.
  • the outside of the lid 105 has electrical conductivity of the substrate / n-type layer, active layer Zp-type layer / n-type layer.
  • the electrical connection is negative pole (n-side electrode) — n / p / n—plus pole (p-side electrode).
  • the bridge structure is the mainstream in that the current confinement and the optical confinement can be controlled.
  • the thickness of the portion indicated by d in FIG. The remaining thickness of the p-type layer 104 outside the lid 105 greatly affects the characteristics of the semiconductor laser having the bridge structure.
  • Figures 3A and 3B show the effective refractive index difference ⁇ inside and outside the bridge and the amount of leakage (leakage) current outside the bridge, respectively, for a general semiconductor laser with a bridge structure. Shows the relationship between d and d. As shown in Figures 3A and 3B, improving light confinement also tends to worsen current confinement (current confinement).
  • the remaining thickness d of the p-type layer is determined in the InP / AlGaInP semiconductor laser.
  • the remaining thickness d of the p-type layer is an important structural parameter for efficiently functioning optical confinement and current confinement in a semiconductor laser having a bridge structure.
  • GaAs ZA 1 GaAs semiconductor laser used as a light source for optical recording systems for CDs and MDs, and Ga I used as a light source for optical recording systems and bar code readers for DVDs n P / A 1 G a I n P semiconductor lasers have sufficient flexibility in selecting the doping amount, which determines the refractive index and electrical conductivity of the buried layer that controls optical confinement, and satisfies the desired laser characteristics.
  • the doping amount which determines the refractive index and electrical conductivity of the buried layer that controls optical confinement, and satisfies the desired laser characteristics.
  • the degree of freedom regarding doping that determines the refractive index and electric conductivity of the buried layer is small.
  • an insulator such as S i 0 2 and S i N, and, A l G a N, AIN nitride-based III one V group compound semiconductor such as are representative.
  • the effective refractive index inside the cartridge is 2.5, whereas the refractive index of S i 0 is 5.
  • the effective refractive index inside the cartridge is about 3.5 in the G aA s / A l G aA s semiconductor laser and the G aIn P / A 1 G a In P semiconductor laser, It can be seen that the refractive index difference determined by the refractive index of the material is small.
  • the effective refractive index outside the bridge must be made smaller. . This means that d needs to be reduced more aggressively.
  • the generation of current outside the bridge also depends greatly on the doping concentration of the p-type layer (eg, asey Jr, "Heterostructure Lasers Chap. 4 (Academic Press)).
  • the higher the doping concentration the more the depletion layer width When an electric field is applied to the pn junction, the depletion layer is formed larger on the side with lower impurity concentration
  • the doping of p-type impurities increases as the band gap of the semiconductor material increases. Therefore, the shorter the wavelength, that is, the higher the bandgap material, the more difficult the nitride III-V compound semiconductor, the more difficult the doping of p-type impurities becomes, and the lower the concentration becomes.
  • the AVH outside the bridge tends to be small and the WH tends to be large, so that the breakdown easily occurs and the current that escapes from the inside of the ridge to the outside. It's raw
  • An object of the present invention to provide a good current confinement by suppressing a leak current outside a lid while sufficiently securing an effective refractive index difference between the inside and the outside of the lid in a bridge structure.
  • An object of the present invention is to provide a semiconductor light emitting device using a nitride III-V compound semiconductor that can be used.
  • the present inventor has conducted intensive studies from both an experiment and a theory in order to solve the above-mentioned problems of the conventional technology, and as a result, has found the above-mentioned limit p-type layer remaining thickness dcr.
  • the value of Cr differs depending on the material to be embedded and contacted with the bridge, specifically, 100 nm for metal contact, 76 nm for insulator contact, and 76 nm for insulator contact.
  • Nitride-based I It was found to be 86 nm when contacting a II-V compound semiconductor.
  • the present invention has been made based on the above study by the present inventors.
  • the semiconductor light emitting device comprises:
  • a P-type layer including an n-type cladding layer, an active layer and at least a p-type cladding layer is sequentially stacked on the substrate,
  • Ledges are formed in the p-type layer
  • An n-type cladding layer, an active layer and a p-type layer are used in a semiconductor light-emitting device comprising a nitride-based III-V compound semiconductor.
  • a metal film is provided outside of the lid in contact with the p-type layer
  • the thickness of the p-type layer between the metal film and the active layer is 100 nm or more
  • the thickness of the p-type layer existing between the metal film and the active layer is preferably 150 nm or more, More preferably, it is 100 nm.
  • the semiconductor light emitting device is:
  • N-type cladding layer, active layer and at least p-type cladding on substrate P-type layers including layers are sequentially laminated
  • Ledges are formed in the P-type layer
  • An n-type cladding layer, an active layer and a p-type layer are used in a semiconductor light-emitting device comprising a nitride-based III-V compound semiconductor.
  • An insulating film is provided in contact with the p-type layer outside the ridge,
  • the thickness of the P-type layer between the insulating film and the active layer is 76 nm or more
  • the semiconductor light emitting device is:
  • a P-type layer including an n-type cladding layer, an active layer and at least a p-type cladding layer is sequentially stacked on the substrate,
  • Ledges are formed in the P-type layer
  • the n-type cladding layer, the active layer and the p-type layer are used in a semiconductor light-emitting device composed of a nitride-based III-V compound semiconductor.
  • a nitride-based III-V compound semiconductor film is provided outside the ridge in contact with the p-type layer,
  • the thickness of the p-type layer existing between the nitride-based I I I-V compound semiconductor film and the active layer is 86 nm or more
  • the semiconductor light emitting device is:
  • An n-type layer including a p-type cladding layer, an active layer and at least an n-type cladding layer is sequentially stacked on the substrate,
  • a ridge is formed in the n-type layer
  • the P-type cladding layer, the active layer and the n-type layer are used in a semiconductor light-emitting device composed of a nitride-based II I-V compound semiconductor.
  • a metal film is provided outside the lid in contact with the n-type layer,
  • the thickness of the n-type layer between the metal film and the active layer is 20 nm or more
  • the semiconductor light emitting device according to a fifth aspect of the present invention is
  • An n-type layer including a p-type cladding layer, an active layer and at least an n-type cladding layer is sequentially stacked on the substrate,
  • Ledges are formed in the n-type layer
  • the p-type cladding layer, the active layer and the n- type layer are used in a semiconductor light emitting device comprising a nitride III-V compound semiconductor.
  • An insulating film is provided outside the lid in contact with the n-type layer,
  • the thickness of the n-type layer between the insulating film and the active layer is 10 nm or more
  • a semiconductor light emitting device is
  • An n-type layer including a p-type cladding layer, an active layer and at least an n-type cladding layer is sequentially stacked on the substrate,
  • Ledges are formed in the n-type layer
  • the p-type cladding layer, the active layer and the n-type layer are used in a semiconductor light emitting device made of a nitride-based III-V compound semiconductor.
  • a nitride-based I I I-V compound semiconductor film is provided outside the bridge in contact with the n-type layer,
  • the thickness of the n-type layer between the nitride-based I I I-V group compound semiconductor film and the active layer is 85 nm or more
  • the second and fifth aspects of the present invention are preferably applied particularly when the surface of the lid is damaged.
  • a dry etching method such as reactive ion etching (RIE) is used to form a bridge. Damage is introduced to the surface of the nitride III-V compound semiconductor layer.
  • Conductivity of the damage portion is n-type, connexion by the dry etching conditions, the carrier concentration also becomes 1 0 19 cm- 3 or more. This is a carrier concentration that exhibits weak metallicity. Therefore, this is equivalent to a structure in which the outside of the lid is covered with thin metal.
  • the second and fifth inventions of the present invention do not perform this removal treatment or the removal is incomplete and the damage is not caused. It is preferably applied when there remains.
  • a p-type layer including a p-type cladding layer, an active layer and an n-type cladding layer, or an n-type layer including an n-type cladding layer, an active layer and a P-type cladding layer are formed.
  • the nitride-based III-V compound semiconductor contains at least one group III element selected from the group consisting of Ga, Al, In, B, and T1, and at least N, and may further contain It consists of group V elements including s or P.
  • Specific examples of the nitride-based II I-V group compound semiconductor include GaN, AlGaN, A1N, GaInN, AlGaInN, and InN.
  • a metal film generally used as a P-side electrode or an n-side electrode can be used as the metal film.
  • a general insulating film such as a SiO 2 film or a Si 3 N 4 film can be used as the insulating film.
  • an appropriate one can be selected from the above various types and used.
  • the upper limit of the thickness of the p-type layer or the n-type layer existing between the metal film, the insulating film, or the nitride III-V compound semiconductor film and the active layer is determined by the effective thickness inside and outside the ridge.
  • the difference in the refractive index is a limit value that is the size required to achieve the required light confinement, and varies depending on the laser structure and the like.
  • the active layer may be any of n-type, p-type and neutral (i-type).
  • the semiconductor light emitting device of the present invention configured as described above, by setting the remaining thickness of the p-type layer or the n-type layer outside the bridge to d c -or more, The current confinement can be performed sufficiently well while ensuring a sufficient effective refractive index difference.
  • the constraints on the structural parameters in the design of the semiconductor light emitting device are shown, the efficiency in device development is improved, and the manufacturing cost of the semiconductor light emitting device can be reduced.
  • FIG. 1 is a sectional view showing a semiconductor laser having a ridge structure
  • FIGS. 2A and 2B are a schematic diagram and a sectional view showing a semiconductor laser having a ridge structure
  • FIG. 3 and FIG. 3B are schematic diagrams showing the relationship between the remaining thickness d of the p-type layer, the effective refractive index difference ⁇ , and the leakage current outside the cartridge in the semiconductor laser having the cartridge structure
  • FIG. ⁇ , Fig. 4 ⁇ , Fig. 4C and Fig. 4D are schematic diagrams for explaining problems in the semiconductor laser having a ridge structure
  • Figs. 5 ⁇ and 5B are FIG. 6 is a schematic diagram for explaining a problem in a semiconductor laser having a structure
  • FIG. 6 is a schematic diagram for explaining a problem in a semiconductor laser having a structure
  • FIG. 6 is a cross-sectional view showing a GaN-based semiconductor laser having a bridge structure according to the first embodiment of the present invention
  • FIGS. FIG. 12 shows a GaN-based semiconductor laser having a bridge structure according to the first embodiment of the present invention.
  • FIG. 13 is a schematic diagram showing the I-V characteristics of a prototype GaN semiconductor laser
  • FIG. 14 is a schematic view of the prototype GaN semiconductor laser. Schematic diagram showing the relationship between the remaining thickness d of the p-type layer of the semiconductor laser and the voltage V 100 mA when the current is 100 mA
  • FIGS. 15C, 16A, 17A and 17B are schematic diagrams for explaining the mechanism of current leakage in the prototype GaN semiconductor laser.
  • FIGS. 18 and 19 are schematic diagrams showing the calculation results of the depletion layer width of the pn junction including the active layer in the prototype GaN-based semiconductor laser.
  • FIG. 21 is a cross-sectional view illustrating a GaN-based semiconductor laser having a bridge structure according to the second embodiment.
  • FIG. 21 is a cross-sectional view illustrating a GaN-based semiconductor laser having a bridge structure according to the third embodiment of the present invention.
  • Fig. 22 shows the structure of the present invention.
  • FIG. 23 is a cross-sectional view illustrating a GaN-based semiconductor laser having a bridge structure according to the fourth embodiment.
  • FIG. 23 is a cross-sectional view illustrating a GaN-based semiconductor laser having a bridge structure according to a fifth embodiment of the present invention.
  • FIG. 24 is a sectional view showing a GaN-based semiconductor laser having a bridge structure according to a sixth embodiment of the present invention.
  • FIG. 6 shows a GaN-based semiconductor laser having a bridge structure according to the first embodiment of the present invention.
  • This GaN-based semiconductor laser has an SCH (Separate Confinement Heteros structure) structure.
  • an n-type semiconductor laser is formed on a c-plane sapphire substrate 11 via an undoped GaN buffer layer 12.
  • G a N contact layer 13 n-type A 1 G a N cladding layer 14, n-type GN optical waveguide layer 15, e.g. I n, N / G a, -y I n y N Active layer 16 with multiple quantum well structure, p-type A 1 G aN cap layer 17, p-type G aN optical waveguide layer 18, p-type A
  • the 1 GaN cladding layer 19 and the p-type GaN contact layer 20 are sequentially laminated.
  • the undoped GaN buffer layer 12 has a thickness of, for example, 30 nm.
  • the n-type GaN contact layer 13 has a thickness of, for example, 4.5 m, and, for example, silicon (Si) is doped as an n-type impurity.
  • the n-type A 1 G aN cladding layer 14 has a thickness of, for example, 1.3 m, and has, for example, Si as an n-type impurity of, for example, 5 ⁇ 10 24 m— 3 (5 ⁇ 10 18 cm 3 ). Doped at a concentration of The A composition of the n-type A 1 GaN cladding layer 14 is, for example, 0.08.
  • the n-type GaN optical waveguide layer 15 has a thickness of, for example, 100 nm, and the n-type impurity, for example, Si has a concentration of, for example, 5 ⁇ 10 24 m— 3 (5 xl 0 ′ 8 cm 3 ). Is doped.
  • the undoped GaIn, N / Ga, -y Inny N multiple quantum well structure active layer 16 has, for example, Ga as a well layer: ⁇ , ⁇
  • the P-type A 1 GaN cap layer 17 has a thickness of, for example, 20 nm, and is doped with, for example, magnesium (M g) as a p-type impurity.
  • the A1 composition of the p-type A1GaN cap layer 17 is, for example, 0.2.
  • the P-type A 1 GaN cap layer 17 is composed of a p-type GaN optical waveguide layer 18, a p-type Al GaN cladding layer 19 and a p-type GaN contact layer 20. This is for preventing In from diffusing and deteriorating In from the active layer 17 during a long period of time, and for preventing overflow of carriers from the active layer 16.
  • the p-type GaN optical waveguide layer 18 has a thickness of, for example, 100 nm, and as a p-type impurity, for example, Mg of, for example, 5 ⁇ 10 25 m 3 (5 ⁇ 10 "Cm- 3) is doped to a concentration of, Canon Ria concentration at this time is about 5 X 1 0 23 m" is 3 (5 X 1 0 17 cm- 3).
  • the p-type AlGaN cladding layer 19 has a thickness of, for example, 1.0 m, and the p-type impurity has, for example, Mg of, for example, 5 ⁇ 10 25 m— 3 (5 ⁇ 10 19 cm— 3).
  • p-type G a N contactor coat layer 2 0 Ri is for example 1 0 0 nm der thickness, for example M g as p-type impurity 8 X 1 0 25 m-3 of (8 X 1 0 19 cm one 3) Doped in concentration.
  • the cladding layer 19 has a mesa shape having a predetermined width.
  • a lid 21 having a predetermined width extending in one direction is formed. I have.
  • the extending direction of the bridge 21 is, for example, the ⁇ 11_20> direction, and the width is, for example, 3 ⁇ m.
  • a Si ⁇ 2 film 22 is formed at a predetermined distance from the lid 21, for example, at an interval of about 1 m. .
  • Mashimashi p-side electrode 2 3 extending consisting entire surface metal over from Li Tsu di 2 1 S i ⁇ 2 film 2 2 on both sides thereof, Li Tsu di 2 1 of the upper and side surfaces and in contact with the P-type a 1 G a N clad layer 1 9 in the portion between re Tsu di 2 1 and S i 0 2 film 2 2.
  • the reason that the p-side electrode 23 made of metal is brought into contact with the lid 21 is to absorb the light generated from the active layer 16 when the laser is driven. It was done.
  • the thickness (remaining thickness) d of the p-type layer between the P-side electrode 23 and the active layer 16 is set to 100 nm or more, for example, 200 nm.
  • the p-side electrode 23 has, for example, a Ni / Pt / Au structure in which a Ni film, a Pt film, and an Au film are sequentially laminated, and the thickness of the Ni film, the Pt film, and the Au film.
  • the thickness of the Ni film, the Pt film, and the Au film are, for example, 1 O nm, 10 O nm and 30 O nm, respectively.
  • n-side electrode 24 is provided on the n-type GaN contact layer 13 adjacent to the mesa.
  • the n-side electrode 14 has, for example, a Ti / A1 / Pt / Au structure in which a Ti film, an A1 film, a Pt film, and an Au film are sequentially laminated.
  • the thicknesses of the A1, Pt, and Au films are, for example, 10 nm, 100 nm, 10 O nm, and 30 O nm, respectively.
  • this GaN-based semiconductor laser In order to manufacture this GaN-based semiconductor laser, first, for example, a metalorganic chemical vapor deposition (MOCVD) method is applied to a c-plane sapphire substrate 11 whose surface has been cleaned by, for example, thermal cleaning. After growing the undoped GaN buffer layer 12 at a temperature of about 20 t, the substrate temperature is raised to a predetermined growth temperature, and the undoped GaN buffer layer is formed by MOCVD as shown in FIG.
  • MOCVD metalorganic chemical vapor deposition
  • n-type GaN contact layer 13 n-type AlGaN layer 14, n-type GaN optical waveguide layer 15, for example, undoped G a I n N / G a .- y I n y N
  • Active layer 16 with multiple quantum well structure, p-type A 1 G aN cap layer 17, p-type G aN optical waveguide layer 18, p-type A l GaN cladding layer 19 and p-type GaN contact layer 20 are sequentially grown.
  • n-type GaN contact layer 13 which is a layer that does not contain In, n-type AlG aN cladding layer 14 and n-type GaN optical waveguide layer 15, p-type Al GaN cap layer 17, p-type GaN optical waveguide layer 18, p-type Al GaN cladding layer 19 and p-type GaN connector layer
  • the growth temperature of 2 0 is set to 1 00 0 ° C, for example, approximately, Ga is a layer containing I n, - I n x n / G a, - y I n y n multiquantum well structure active layer 1 6 growth of The temperature is, for example, 800 ° C.
  • the raw materials for growing these GaN-based semiconductor layers are, for example, trimethylgallium ((CH 3 ) Ga, TMG) as a raw material for Group III element Ga, and a raw material for Group III element Al. is the door trimethyl aluminum ((CH 3) a a 1 , TM a), as a raw material of I n is a group III element, the door Rimechi Le indium ((CH 3) 3 I n , TM I), Ammonia (NH 3 ) is used as a raw material for N, a Group V element.
  • a carrier gas for example, a mixed gas of hydrogen (H 2 ) and nitrogen (N 2 ) is used.
  • a dopant for example, monosilane (SiH 4 ) is used as an n-type dopant.
  • the c-plane sapphire substrate 11 on which the GaN-based semiconductor layer has been grown is taken out of the MOCVD apparatus.
  • a 0.4 m-thick SiO 2 film (not shown) is formed on the entire surface of the p-type GaN contact layer 20 by, for example, a CVD method, a vacuum evaporation method, a sputtering method, or the like.
  • a resist pattern (not shown) of a predetermined shape is formed on the Si film by lithography, and the resist pattern is used as a mask, for example, by etching using a hydrofluoric acid-based etching solution.
  • the S i 0 film is etched by reactive Ion etching (RIE) method using a Etsuchingugasu containing fluorine such as CF 4 or CHF 3, scan tri Shape. Shows the S i 0 2 film of the scan Bok striped shape code 2 5.
  • RIE reactive Ion etching
  • etching is performed to a predetermined depth in the thickness direction of the p-type A 1 GaN cladding layer 19 by, for example, RIE, as shown in FIG. To form a bridge 21.
  • the remaining thickness d of the p-type layer after the formation of the lid 21 is set to 100 nm or more.
  • the RIE etching gas for example, a chlorine-based gas is used.
  • a predetermined striped S shape is formed so as to cover the lid 21 as shown in FIG. the i 0 2 film 2 6 formed on the substrate surface.
  • etching is performed by using the S i 0 z film 26 as a mask until the n-type GaN contact layer 13 is exposed, for example, by the RIE method, as shown in FIG.
  • the layer 17, the p-type GaN optical waveguide layer 18 and the p-type A1 GaN cladding layer 19 are patterned into a mesa shape.
  • the SiO 2 film 26 is removed by etching.
  • a resist pattern (not shown) having a predetermined shape was formed on the surface of the substrate, and a Ti film, an Al film, a Pt film, and an Au film were sequentially formed on the entire surface of the substrate by a vacuum deposition method or the like. Thereafter, the resist pattern is removed together with the Ti film, A1 film, Pt film and Au film thereon (lift-off).
  • an n-side electrode 24 is formed on the n-type GaN contact layer 13 in a portion adjacent to the mesa portion.
  • alloy processing for bringing the n-side electrode 24 into ohmic contact with the n-type GaN contact layer 13 is performed.
  • an SiO 2 film 22 having a thickness of, for example, 0.3 m is formed on the entire surface of the substrate by, for example, a CVD method, a vacuum evaporation method, a sputtering method, or the like.
  • a resist pattern 27 having a predetermined shape is formed thereon by lithography, with a region including the region above the lid 21 being open.
  • the resist pattern 27 is used as a mask, for example, wet etching using a hydrofluoric acid-based etchant or RIE using an etching gas containing fluorine such as CF 4 or CHF 3 is performed. 2 Etch the film 22. As a result, as shown in FIG. 12, the p-type A 1 GaN cladding layer 19 in the vicinity of the lid 21 is exposed. Thereafter, the resist pattern 27 is removed.
  • a resist pattern (not shown) having a predetermined shape is formed on the surface of the substrate, and for example, a Ni film, a Pt film, and an Au film are sequentially formed on the entire surface of the substrate by a vacuum deposition method or the like, and then the resist pattern is formed. Is removed together with the Ni film, Pt film and Au film thereon (lift-off). Thereby, as shown in FIG. 6, the p-side electrode 13 is formed so as to cover the lid 21. Next, alloy processing for bringing the p-side electrode 23 into ohmic contact is performed. Thereafter, unnecessary portions of the SiO 2 film 22 are removed by etching to expose the n-side electrode 14.
  • the c-plane sapphire substrate 11 on which the laser structure is formed as described above is rubbed from the back side to, for example, a thickness of about 100, and then the c-plane sapphire substrate 1 on which the laser structure is formed is formed. 1 is processed into a bar shape by cleavage or the like to form both resonator end faces. At this time, the resonator length is set to a desired value. However, when the length is set to 500 ⁇ m or less, it is desirable that the sapphire substrate 11 be further thinned.
  • the thickness is determined according to the refractive index of the dielectric film to be vacuum-deposited and the refractive index of the semiconductor laser. After this, the bar is divided into individual elements by cleavage, etc.
  • the electrodes are taken out from the same side of the substrate. Therefore, by using a submount, the positive and negative electrodes can be taken out of the package without causing a short circuit.
  • solder material used for the die bond for example, Sn, Au—Sn, and the like can be used. Thereafter, bonding of, for example, an Au wire to a portion called a submount and a package pin completes electrode extraction. By welding the window cap to this, the assembly of the GaN semiconductor laser having the structure shown in Fig. 6 is completed.
  • the operating voltage when the current is 100 mA (this is assumed to be V100 mA) is determined, and V100 mA ⁇ 6 V indicates a leak. . Also, among those indicating the leak, the larger the V100 mA, the smaller the degree of the leak.
  • a normal product is shown from 100 nm or more (0.1 ⁇ ), and the validity of the first embodiment in which d is set to 100 nm or more is proved.
  • the region of d 100 to 200 nm (0.1 to 0.2 m)
  • the normal product and the leak product are mixed, but this is mainly due to the variation in the amount of doping during the growth of the GaN-based semiconductor layer that forms the laser structure, especially the p-type GaN-based semiconductor layer. It is not directly related to d.
  • FIG. 14 it can be seen that when d is 200 nm (0.2 um) or more, only normal products are obtained, high yield is obtained, and it is preferable.
  • the leak mechanism of this structure is similar to that described in connection with FIGS. 8, 4B, 4 (, 4D, 5A, and 5B.
  • the pn junction including the active layer 16 is formed in the remaining p-type layer outside the cartridge 21.
  • the p-side depletion layer and the depletion layer coming from the Schottky junction between the p-side electrode 23 and the remaining layer of the p-type layer are connected, and the effective built-in potential ⁇ outside the lid 21 is V, force, ', and the built-in potential ⁇ , inside the lid 21 are lower, so if the applied voltage is low, current will flow outside the lid 11 and Fig.
  • I-V characteristic shown in Fig. 16 It can be understood as an abnormal I-V characteristic shown in Fig. 16. That is, in the I-V characteristic shown in Fig. 16, the low current side shown by ⁇ 17 As shown in Fig. A, a current leak occurs from the contact between the p-side electrode 23 and the remaining layer of the p-type layer, and in the I-V characteristic shown in Fig. 16 on the high current side shown by B in Fig. As shown in Fig. 2B, current flows from the contact between the p-side electrode 23 and the p-type GaN connector layer 20 in the part of the lid 21 and the p-side electrode 23 and p A current leak occurs from a contact portion of the mold layer with the remaining layer.
  • Figure 18 shows the width of the depletion layer of the pn junction including the active layer 16 as the carrier concentration n of the n-type A 1 GaN cladding layer and the carrier concentration p of the p-type A 1 GaN cladding layer. The results of the calculations are shown below.
  • 81 is the A1 composition of the 11-type A1GN cladding layer and the p-type AlGanN cladding layer
  • xp is the p-side depletion layer width
  • ⁇ ⁇ is the ⁇ -side depletion layer width
  • x t . t xp + xn .
  • the first 9 figure shows the horizontal axis as a result of the plots of the calculated value of chi [rho ordinate the chi [rho a [rho. From this calculation, the depletion layer width on the ⁇ side is estimated to be about 76 nm. By setting the width of the depletion layer on the p-side plus the width of the depletion layer from the Schottky junction between the p-side electrode 23 and the remaining layer of the p-type layer larger than d10 O nm, A high I-V characteristic can be obtained. This calculation also proves the validity of the above-described mechanism and, consequently, the validity of the first embodiment. In the first embodiment, the laser characteristics were represented by the I-V characteristics. However, the current (I) -light output (L) characteristics did not lead to lasing, and the natural emission light was slightly observed. It was just something to do.
  • the leakage current outside the cartridge 21 is reduced. Can be suppressed. For this reason, a sufficiently large effective refractive index difference is secured by the lid structure to achieve good optical confinement, and at the same time, leakage current is sufficiently suppressed to perform good current confinement and obtain good laser characteristics. it can. As a result, the production yield of the GaN-based semiconductor laser can be improved.
  • FIG. 20 shows a GaN-based semiconductor laser having a bridge structure according to the first embodiment of the present invention.
  • the insulating film 28 covers the layer 19, and the p-side electrode 23 is formed on the p-type GaN contact layer 20 on the upper surface of the ridge 21.
  • the insulating film 28 for example, a Si 2 film or a SiN film can be used.
  • the p-type between the insulating film 28 and the active layer 16 The remaining thickness d of the layer is set to 76 nm or more.
  • the value of 76 nm is different from the lower limit value 100 nm of the remaining thickness d of the p-type layer in the first embodiment from the lower limit value 100 nm of the p-side electrode 23 in the first embodiment and the remaining layer of the p-type layer. This is equivalent to the value obtained by subtracting the width of the depletion layer from the Schottky junction.
  • the width of the depletion layer generated in the remaining layer of the p-type layer can be increased to d. It is also shown from the calculation results shown in Fig. 13 that the abnormalities in characteristics can be prevented.
  • GaN-based semiconductor laser according to the second embodiment are the same as those of the GaN-based semiconductor laser according to the first embodiment, and a description thereof will not be repeated. In addition, since the manufacturing method is the same, the description is omitted. According to the second embodiment, advantages similar to those of the first embodiment can be obtained.
  • FIG. 21 shows a GaN-based semiconductor laser having a bridge structure according to a third embodiment of the present invention.
  • the p-type A 1 GaN cladding from the side of the lid 21 to the bottom of the lid 21 is formed.
  • the layer 19 is covered with a nitride III-V compound semiconductor film 19, and a p-side electrode 23 is formed on the p-type GaN contact layer 20 on the upper surface of the ridge 11.
  • the nitride III-V compound semiconductor film 29 is made of, for example, A 1 N, A 1 GaN, GaN, etc. ⁇ In this case, the active layer 16 is formed outside the lid 21.
  • the depletion layer width on the remaining layer side of the p-type layer from the pn junction, and the p-type from the junction between the nitride III-V compound semiconductor film 29 and the remaining layer of the p-type layer It suffices that the condition that the sum of the width of the depletion layer on the remaining layer side of the layer is d is small.
  • the nitride-based III one V compound semiconductor film 1 9 cases was one in which no added impurity, a P n junction or pleasure Ru p-type layer sandwiching the active layer 1 6
  • the width of the depletion layer on the remaining layer side is 76 nm, and the width of the depletion layer on the remaining layer side of the p-type layer is 1 due to the junction between the nitride III-V compound semiconductor film 29 and the remaining layer of the p-type layer.
  • a nitride III-V compound semiconductor film 29 without addition of impurities is used as the buried layer.
  • n to lxl 0 22 m 3 (lxl O ' 6 cm 3 ) shows that the junction between the nitride III-V compound semiconductor film 29 and the remaining p-type layer
  • the width of the depletion layer on the remaining layer side of the p-type layer is 10 nm.
  • the nitride III-V compound semiconductor film 29 is doped with n-type impurities and the n concentration is increased, the depletion layer to the remaining layer side of the p-type layer expands. Need to be bigger.
  • the width of the depletion layer from the pn junction including the active layer 16 to the remaining layer of the p-type layer does not greatly depend on the carrier concentration of the n-type layer, but greatly depends on the carrier concentration of the p-type layer.
  • GaN-based semiconductor laser according to the third embodiment are the same as those of the GaN-based semiconductor laser according to the first embodiment, and a description thereof will not be repeated. In addition, since the manufacturing method is the same, the description is omitted. According to the third embodiment, advantages similar to those of the first embodiment can be obtained.
  • the n-concentration and p-concentration shown in FIG. 18 are highly feasible and appropriate values for maintaining the laser characteristics, and are appropriate values for the p-type layer shown in the first to third embodiments. The remaining thickness indicates the lower limit of d in this range.
  • the GaN-based semiconductor lasers according to the first, second, and third embodiments are examples in which a ridge is formed in a P-type layer. Will be described.
  • FIG. 12 shows a GaN-based semiconductor laser having a bridge structure according to a fourth embodiment of the present invention.
  • the p-type sapphire substrate 51 is provided with an Type GaN contact layer 53, p-type A1 GaN cladding layer 54, p-type GaN optical waveguide layer 55, e.g., undoped G a In x N / G a, -y In y N Multiple quantum well structure active layer 56, n-type A1 GaN cap layer 57, n-type GaN optical waveguide layer 58, n-type A1 GaN cladding layer 59 and p-type
  • the GaN contact layers 60 are sequentially laminated.
  • the thickness, impurity concentration, A 1 composition, and the like of these GaN-based semiconductor layers are, for example, the same as those in the first embodiment.
  • the cladding layer 59 has a mesa shape having a predetermined width.
  • a lid 61 of a predetermined width extending in one direction is formed.
  • the extending direction of the lid portion is, for example, the ⁇ 111-200> direction, and the width is, for example, 3 um.
  • Li Tsu di 6 1 and Jo Tokoro interval for example, S i 0 2 film 6 2 at intervals of about 1 Ai m is formed I have.
  • An n-side electrode 63 made of metal extends over the entire surface from the lid 61 to the Si 02 film 62 on both sides thereof, and the upper and side surfaces of the lid 61 and the n-side electrode 63 are formed. in contact with the n-type a 1 G a n clad layer 5 9 in the portion between re Tsu di 6 1 and S I ⁇ 2 film 6 2.
  • the reason that the n-side electrode 63 made of metal is brought into contact with the bridge 61 is intended to absorb the light generated from the active layer 56 when the laser is driven. Things. That is, a so-called loss guide mechanism in which light is guided in the horizontal direction (lateral direction) by covering the outside of the lid 61 with a material that absorbs light is provided. In this case, the thickness (remaining thickness) d of the n-type layer between the n-side electrode 63 and the active layer 56 is set to 20 nm or more.
  • the n-side electrode 61 has, for example, a Ti / A1 / Pt / Au structure in which a Ti film, an A1 film, a Pt film, and an Au film are sequentially laminated.
  • the thicknesses of the Pt film and the Au film are, for example, 10 nm, 100 nm, 100 nm and 300 nm, respectively.
  • a p-side electrode 64 is provided on the p-type GaN contact layer 53 in a portion adjacent to the mesa portion.
  • the p-side electrode 64 has, for example, a NiZPtZAu structure in which an Ni film, a Pt film, and an Au film are sequentially laminated.
  • the thicknesses are, for example, 10 nm, 10 O nm and 30 O nm, respectively.
  • FIG. 23 shows a GaN-based semiconductor laser having a bridge structure according to a fifth embodiment of the present invention.
  • the n-type A 1 GaN cladding is provided from the side of the lid 61 to the bottom of the lid 61.
  • the insulating film 65 covers the layer 59, and the p-side electrode 63 is formed on the n-type GaN contact layer 60 on the upper surface of the ridge 61.
  • the insulating film 6 5 may have use for such as S i 0 2 film or S i N film.
  • the remaining thickness d of the n-type layer between the insulating film 65 and the active layer 56 is set to 10 nm or more.
  • the value of 1 O nm is different from the lower limit value 2 O nm of the remaining thickness d of the n-type layer in the fourth embodiment from the n-side electrode 63 in the first embodiment and the remaining layer of the n-type layer. This is equivalent to the value obtained by subtracting the depletion layer width of 10 nm from the Schottky junction.In this way, by making the remaining thickness d of the n-type layer larger than 1 O nm, it is generated in the remaining layer of the n-type layer. The depletion layer width d can be increased, and abnormalities in the IV characteristics and abnormalities in the IL characteristics can be prevented.
  • the other features of the GaN-based semiconductor laser according to the fifth embodiment are the same as those of the GaN-based semiconductor laser according to the fourth embodiment, and a description thereof will not be repeated.
  • FIG. 24 shows a GaN-based semiconductor laser having a bridge structure according to a sixth embodiment of the present invention.
  • an n-type A 1 GaN cladding is provided from the side of the lid 61 to the bottom of the lid 61.
  • the n-type GaN contact layer on the upper surface of the ridge 61 is covered with the nitride III-V compound semiconductor film 66 over the layer 59.
  • a p-side electrode 63 is formed on 60.
  • the depletion layer width on the remaining layer side of the n-type layer coming from the pn junction and the n-type layer coming from the junction between the nitride III-V compound semiconductor film 66 and the remaining layer of the n-type layer The condition that the sum with the width of the depletion layer on the remaining layer side is ⁇ d is sufficient.
  • the group-III compound semiconductor film 19 is doped with Mg as a p-type impurity and its carrier concentration is 5 ⁇ 10 23 m— 3 (5 ⁇ 10 17 cm— 3 )
  • the width of the depletion layer on the remaining layer side of the n-type layer coming from the P n junction sandwiching the active layer 56 is 8 nm
  • the other features of the GaN-based semiconductor laser according to the sixth embodiment are the same as those of the GaN-based semiconductor laser according to the fourth embodiment, and a description thereof will not be repeated.
  • the numerical values, structures, substrates, raw materials, processes, and the like described in the above embodiments are merely examples, and different numerical values, structures, substrates, raw materials, processes, and the like may be used as necessary.
  • the direction in which the stripe stripe extends is the ⁇ 11 ⁇ 20> direction of the c-plane sapphire substrate 1, but the direction in which the stripe stripe extends is the ⁇ 111> direction. It may be.
  • a c-plane sapphire substrate is used as a substrate.
  • another substrate for example, a SiC substrate, a Si substrate, a spinel substrate, or the like may be used.
  • the present invention provides, for example, a GaN-based semiconductor laser having a DH (Double Heterostructure) structure. May be applied.
  • DH Double Heterostructure
  • the MOCVD method is used for growing the GaN-based semiconductor layer.
  • other methods such as molecular beam epitaxy (MBE) are used to grow these GaN-based semiconductor layers. You may grow.
  • MBE molecular beam epitaxy
  • the effective refractive index inside and outside the ridge can be obtained.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un élément électroluminescent à semi-conducteur, comprenant, appliquées séquentiellement en strates sur un substrat, une couche de placage du type n, une couche active et une couche de type p contenant au moins une couche de placage de type p, un composé semi-conducteur au nitrure III-V formant une nervure, utilisé comme couche de type p. Ainsi, lorsqu'un film métallique, un film isolant ou un film de composé semi-conducteur au nitrure III-V est prévu à l'extérieur de la nervure en contact avec la couche de type p, l'épaisseur d'une couche de type p présente entre le film métallique, le film isolant ou le film de composé semi-conducteur au nitrure III-V et une couche active, est respectivement d'au moins 100 nm, d'au moins 76 nm ou d'au moins 86 nm. L'invention porte également sur un élément électroluminescent à semi-conducteur comprenant, appliquées séquentiellement en strates sur un substrat, une couche de placage de type p, une couche active et une couche de type n contenant au moins une couche de placage de type n, un composé semi-conducteur au nitrure III-V en forme de nervure étant utilisé comme couche de type n. Ainsi, lorsqu'un film métallique, un film isolant ou un film de composé semi-conducteur au nitrure III-V est prévu à l'extérieur de la nervure en contact avec la couche de type n, l'épaisseur de la couche de type n présente entre la couche métallique, le film isolant ou le film de composé semi-conducteur au nitrure III-V et une couche active, est respectivement d'au moins 20 nm, d'au moins 10 nm ou d'au moins 85 nm.
PCT/JP2000/008018 1999-11-22 2000-11-14 Element electroluminescent a semi-conducteur WO2001039342A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223148A (ja) * 2004-02-05 2005-08-18 Sharp Corp 窒化物系半導体レーザ素子とそれを含む光学式情報処理装置
JP2009027205A (ja) * 2008-11-06 2009-02-05 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ装置
JP2009246194A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
CN112152086A (zh) * 2020-11-24 2020-12-29 度亘激光技术（苏州）有限公司 半导体器件的制造方法、半导体器件及半导体组件

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JPH0563236A (ja) * 1991-05-20 1993-03-12 Nichia Chem Ind Ltd 青色発光ダイオード
JPH09260772A (ja) * 1996-03-25 1997-10-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US5812576A (en) * 1996-08-26 1998-09-22 Xerox Corporation Loss-guided semiconductor lasers
JPH10294529A (ja) * 1996-09-09 1998-11-04 Toshiba Corp 半導体レーザ及びその製造方法
JPH10321962A (ja) * 1997-05-21 1998-12-04 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563236A (ja) * 1991-05-20 1993-03-12 Nichia Chem Ind Ltd 青色発光ダイオード
JPH09260772A (ja) * 1996-03-25 1997-10-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US5812576A (en) * 1996-08-26 1998-09-22 Xerox Corporation Loss-guided semiconductor lasers
JPH10294529A (ja) * 1996-09-09 1998-11-04 Toshiba Corp 半導体レーザ及びその製造方法
JPH10321962A (ja) * 1997-05-21 1998-12-04 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223148A (ja) * 2004-02-05 2005-08-18 Sharp Corp 窒化物系半導体レーザ素子とそれを含む光学式情報処理装置
JP2009246194A (ja) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
JP2009027205A (ja) * 2008-11-06 2009-02-05 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ装置
CN112152086A (zh) * 2020-11-24 2020-12-29 度亘激光技术（苏州）有限公司 半导体器件的制造方法、半导体器件及半导体组件
CN112152086B (zh) * 2020-11-24 2021-03-09 度亘激光技术（苏州）有限公司 半导体器件的制造方法、半导体器件及半导体组件

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