JP3856901B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP3856901B2
JP3856901B2 JP11354997A JP11354997A JP3856901B2 JP 3856901 B2 JP3856901 B2 JP 3856901B2 JP 11354997 A JP11354997 A JP 11354997A JP 11354997 A JP11354997 A JP 11354997A JP 3856901 B2 JP3856901 B2 JP 3856901B2
Authority
JP
Japan
Prior art keywords
electrode
display device
insulating film
circuit
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11354997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10288797A (ja
JPH10288797A5 (enExample
Inventor
舜平 山崎
久 大谷
潤 小山
聡 寺本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP11354997A priority Critical patent/JP3856901B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US09/058,870 priority patent/US6400426B1/en
Priority to KR1019980013390A priority patent/KR100553112B1/ko
Publication of JPH10288797A publication Critical patent/JPH10288797A/ja
Priority to US10/127,581 priority patent/US6967696B2/en
Publication of JPH10288797A5 publication Critical patent/JPH10288797A5/ja
Priority to US11/282,483 priority patent/US7675583B2/en
Application granted granted Critical
Publication of JP3856901B2 publication Critical patent/JP3856901B2/ja
Priority to US12/683,473 priority patent/US8031284B2/en
Priority to US13/247,342 priority patent/US8405789B2/en
Priority to US13/848,234 priority patent/US8576348B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/0101—Head-up displays characterised by optical features
    • G02B2027/0138—Head-up displays characterised by optical features comprising image capture systems, e.g. camera
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP11354997A 1997-04-15 1997-04-15 表示装置 Expired - Fee Related JP3856901B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP11354997A JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置
US09/058,870 US6400426B1 (en) 1997-04-15 1998-04-13 Reflective liquid crystal display panel and device using same
KR1019980013390A KR100553112B1 (ko) 1997-04-15 1998-04-15 반사형액정디스플레이패널및이것을이용한장치
US10/127,581 US6967696B2 (en) 1997-04-15 2002-04-23 Reflective liquid crystal display panel and device using same
US11/282,483 US7675583B2 (en) 1997-04-15 2005-11-21 Reflective liquid crystal display panel and device using same
US12/683,473 US8031284B2 (en) 1997-04-15 2010-01-07 Reflective liquid crystal display panel and device using same
US13/247,342 US8405789B2 (en) 1997-04-15 2011-09-28 Reflective liquid crystal display panel and device using same
US13/848,234 US8576348B2 (en) 1997-04-15 2013-03-21 Reflective liquid crystal display panel and device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11354997A JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006067421A Division JP3857302B2 (ja) 2006-03-13 2006-03-13 表示装置

Publications (3)

Publication Number Publication Date
JPH10288797A JPH10288797A (ja) 1998-10-27
JPH10288797A5 JPH10288797A5 (enExample) 2005-03-10
JP3856901B2 true JP3856901B2 (ja) 2006-12-13

Family

ID=14615131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11354997A Expired - Fee Related JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置

Country Status (3)

Country Link
US (6) US6400426B1 (enExample)
JP (1) JP3856901B2 (enExample)
KR (1) KR100553112B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101337319B1 (ko) 2006-10-04 2013-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 이의 제작 방법

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JP4827984B2 (ja) * 2000-05-29 2011-11-30 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US7019718B2 (en) * 2000-07-25 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Display device
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JP2002244585A (ja) * 2001-02-02 2002-08-30 Koninkl Philips Electronics Nv 画像表示装置
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KR101250790B1 (ko) 2006-06-30 2013-04-04 엘지디스플레이 주식회사 액정표시장치의 제조방법
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR101540341B1 (ko) * 2008-10-17 2015-07-30 삼성전자주식회사 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
JP5515281B2 (ja) * 2008-12-03 2014-06-11 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5236812B2 (ja) * 2009-09-11 2013-07-17 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス型表示装置
CN105206514B (zh) * 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101337319B1 (ko) 2006-10-04 2013-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 이의 제작 방법
KR101406770B1 (ko) 2006-10-04 2014-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 이의 제작 방법

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KR100553112B1 (ko) 2006-07-06
US8031284B2 (en) 2011-10-04
KR19980081413A (ko) 1998-11-25
JPH10288797A (ja) 1998-10-27
US20020123175A1 (en) 2002-09-05
US20100134709A1 (en) 2010-06-03
US20060072059A1 (en) 2006-04-06
US8576348B2 (en) 2013-11-05
US6400426B1 (en) 2002-06-04
US8405789B2 (en) 2013-03-26
US20120019739A1 (en) 2012-01-26
US20130215351A1 (en) 2013-08-22
US7675583B2 (en) 2010-03-09
US6967696B2 (en) 2005-11-22

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