JPH10288797A5 - - Google Patents

Info

Publication number
JPH10288797A5
JPH10288797A5 JP1997113549A JP11354997A JPH10288797A5 JP H10288797 A5 JPH10288797 A5 JP H10288797A5 JP 1997113549 A JP1997113549 A JP 1997113549A JP 11354997 A JP11354997 A JP 11354997A JP H10288797 A5 JPH10288797 A5 JP H10288797A5
Authority
JP
Japan
Prior art keywords
electrode
circuit
insulating film
film
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997113549A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10288797A (ja
JP3856901B2 (ja
Filing date
Publication date
Priority claimed from JP11354997A external-priority patent/JP3856901B2/ja
Priority to JP11354997A priority Critical patent/JP3856901B2/ja
Application filed filed Critical
Priority to US09/058,870 priority patent/US6400426B1/en
Priority to KR1019980013390A priority patent/KR100553112B1/ko
Publication of JPH10288797A publication Critical patent/JPH10288797A/ja
Priority to US10/127,581 priority patent/US6967696B2/en
Publication of JPH10288797A5 publication Critical patent/JPH10288797A5/ja
Priority to US11/282,483 priority patent/US7675583B2/en
Publication of JP3856901B2 publication Critical patent/JP3856901B2/ja
Application granted granted Critical
Priority to US12/683,473 priority patent/US8031284B2/en
Priority to US13/247,342 priority patent/US8405789B2/en
Priority to US13/848,234 priority patent/US8576348B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11354997A 1997-04-15 1997-04-15 表示装置 Expired - Fee Related JP3856901B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP11354997A JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置
US09/058,870 US6400426B1 (en) 1997-04-15 1998-04-13 Reflective liquid crystal display panel and device using same
KR1019980013390A KR100553112B1 (ko) 1997-04-15 1998-04-15 반사형액정디스플레이패널및이것을이용한장치
US10/127,581 US6967696B2 (en) 1997-04-15 2002-04-23 Reflective liquid crystal display panel and device using same
US11/282,483 US7675583B2 (en) 1997-04-15 2005-11-21 Reflective liquid crystal display panel and device using same
US12/683,473 US8031284B2 (en) 1997-04-15 2010-01-07 Reflective liquid crystal display panel and device using same
US13/247,342 US8405789B2 (en) 1997-04-15 2011-09-28 Reflective liquid crystal display panel and device using same
US13/848,234 US8576348B2 (en) 1997-04-15 2013-03-21 Reflective liquid crystal display panel and device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11354997A JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006067421A Division JP3857302B2 (ja) 2006-03-13 2006-03-13 表示装置

Publications (3)

Publication Number Publication Date
JPH10288797A JPH10288797A (ja) 1998-10-27
JPH10288797A5 true JPH10288797A5 (enExample) 2005-03-10
JP3856901B2 JP3856901B2 (ja) 2006-12-13

Family

ID=14615131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11354997A Expired - Fee Related JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置

Country Status (3)

Country Link
US (6) US6400426B1 (enExample)
JP (1) JP3856901B2 (enExample)
KR (1) KR100553112B1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9825314D0 (en) 1998-11-20 1999-01-13 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2002040486A (ja) 2000-05-19 2002-02-06 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
JP4827984B2 (ja) * 2000-05-29 2011-11-30 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US7019718B2 (en) * 2000-07-25 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Display device
US6734924B2 (en) * 2000-09-08 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2002162646A (ja) * 2000-09-14 2002-06-07 Sony Corp 反射型液晶表示装置
JP2002229061A (ja) * 2001-02-01 2002-08-14 Sony Corp 薄膜半導体装置及び反射型表示装置
JP2002244585A (ja) * 2001-02-02 2002-08-30 Koninkl Philips Electronics Nv 画像表示装置
US6731572B2 (en) * 2001-04-12 2004-05-04 Samsung Electronics Co., Ltd. Optical pickup actuator, optical pickup employing the optical pickup actuator, and optical recording and/or reproducing apparatus employing the optical pickup
US6686977B2 (en) * 2001-07-24 2004-02-03 Three-Five Systems, Inc. Liquid crystal on silicon device
JP2003076298A (ja) * 2001-09-05 2003-03-14 Toshiba Corp 表示装置
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
JP3983037B2 (ja) * 2001-11-22 2007-09-26 株式会社半導体エネルギー研究所 発光装置およびその作製方法
JP4073239B2 (ja) * 2002-04-24 2008-04-09 三洋電機株式会社 表示装置
JP2003316284A (ja) * 2002-04-24 2003-11-07 Sanyo Electric Co Ltd 表示装置
JP4019868B2 (ja) * 2002-09-11 2007-12-12 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4085369B2 (ja) * 2002-10-10 2008-05-14 日本ビクター株式会社 液晶表示装置
CN100370491C (zh) * 2002-12-10 2008-02-20 株式会社半导体能源研究所 发光装置及其制作方法
US7486341B2 (en) * 2005-11-03 2009-02-03 University Of Central Florida Research Foundation, Inc. Head mounted display with eye accommodation having 3-D image producing system consisting of, for each eye, one single planar display screen, one single planar tunable focus LC micro-lens array, one single planar black mask and bias lens
KR101250790B1 (ko) 2006-06-30 2013-04-04 엘지디스플레이 주식회사 액정표시장치의 제조방법
CN102646681B (zh) 2006-10-04 2015-08-05 株式会社半导体能源研究所 半导体器件
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR101540341B1 (ko) * 2008-10-17 2015-07-30 삼성전자주식회사 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
JP5515281B2 (ja) * 2008-12-03 2014-06-11 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5236812B2 (ja) * 2009-09-11 2013-07-17 シャープ株式会社 アクティブマトリクス基板およびアクティブマトリクス型表示装置
CN105206514B (zh) * 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103297A (en) 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
US5327001A (en) 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5032883A (en) 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
CA1313563C (en) 1988-10-26 1993-02-09 Makoto Sasaki Thin film transistor panel
US5264077A (en) 1989-06-15 1993-11-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing a conductive oxide pattern
US5498573A (en) * 1989-11-29 1996-03-12 General Electric Company Method of making multi-layer address lines for amorphous silicon liquid crystal display devices
US5200847A (en) * 1990-05-01 1993-04-06 Casio Computer Co., Ltd. Liquid crystal display device having driving circuit forming on a heat-resistant sub-substrate
US5056895A (en) 1990-05-21 1991-10-15 Greyhawk Systems, Inc. Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
US5182624A (en) 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950001360B1 (ko) 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US5946561A (en) 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3071851B2 (ja) 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5414442A (en) 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH055898A (ja) * 1991-06-27 1993-01-14 Casio Comput Co Ltd 薄膜素子形成パネル
US5305519A (en) 1991-10-24 1994-04-26 Kawasaki Steel Corporation Multilevel interconnect structure and method of manufacturing the same
JP3064596B2 (ja) 1991-11-29 2000-07-12 セイコーエプソン株式会社 液晶パネルおよびその製造方法
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR940002642A (ko) * 1992-07-02 1994-02-17 이헌조 반사형 액티브 매트릭스 액정표시소자
FR2693249B1 (fr) * 1992-07-03 1994-09-16 Hutchinson Procédé de raccordement de tubes ou tuyaux, raccords et dispositifs analogues obtenus par sa mise en Óoeuvre.
CN1196184C (zh) 1992-07-06 2005-04-06 株式会社半导体能源研究所 半导体器件及其形成方法
JP3345089B2 (ja) 1993-03-26 2002-11-18 株式会社半導体エネルギー研究所 カラーフィルタ基板の作製方法
JP2789293B2 (ja) 1993-07-14 1998-08-20 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3109967B2 (ja) 1993-12-28 2000-11-20 キヤノン株式会社 アクティブマトリクス基板の製造方法
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP3126630B2 (ja) * 1994-06-20 2001-01-22 キヤノン株式会社 ディスプレイ
US6011607A (en) * 1995-02-15 2000-01-04 Semiconductor Energy Laboratory Co., Active matrix display with sealing material
TW344901B (en) 1995-02-15 1998-11-11 Handotai Energy Kenkyusho Kk Active matrix display device
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6081305A (en) 1995-05-30 2000-06-27 Hitachi, Ltd. Liquid crystal light valve and projection type liquid crystal display using such valve
JP3176021B2 (ja) * 1995-05-30 2001-06-11 株式会社日立製作所 液晶ライトバルブ及びそれを用いた投射型液晶ディスプレイ
JP3307181B2 (ja) * 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置
JP3295679B2 (ja) 1995-08-04 2002-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100338480B1 (ko) * 1995-08-19 2003-01-24 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JPH0968726A (ja) * 1995-09-01 1997-03-11 Pioneer Video Corp 反射型液晶表示装置
JP3228399B2 (ja) 1995-09-12 2001-11-12 シャープ株式会社 液晶表示装置
TW371776B (en) 1995-10-15 1999-10-11 Semiconductor Energy Lab Co Ltd Laser irradiation apparatus and method
US6027960A (en) 1995-10-25 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
TW329500B (en) 1995-11-14 1998-04-11 Handotai Energy Kenkyusho Kk Electro-optical device
TW384412B (en) 1995-11-17 2000-03-11 Semiconductor Energy Lab Display device
US5847410A (en) 1995-11-24 1998-12-08 Semiconductor Energy Laboratory Co. Semiconductor electro-optical device
TW309633B (enExample) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JPH09172070A (ja) 1995-12-18 1997-06-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US6005648A (en) 1996-06-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Display device
US5866484A (en) 1996-07-09 1999-02-02 Nippon Steel Corporation Semiconductor device and process of producing same

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