JP3855982B2 - クリーニング方法及びクリーニング装置 - Google Patents
クリーニング方法及びクリーニング装置 Download PDFInfo
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- JP3855982B2 JP3855982B2 JP2003333553A JP2003333553A JP3855982B2 JP 3855982 B2 JP3855982 B2 JP 3855982B2 JP 2003333553 A JP2003333553 A JP 2003333553A JP 2003333553 A JP2003333553 A JP 2003333553A JP 3855982 B2 JP3855982 B2 JP 3855982B2
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- Prior art keywords
- plasma
- process chamber
- cleaning
- gas
- plasma source
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Epidemiology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Public Health (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (3)
- プラズマ処理装置のプロセスチャンバーのクリーニング方法であって、
第1のプラズマ源にて、クリーニングガスを活性化させる工程と、
前記活性化されたクリーニングガスを、第3のプラズマ源にて再活性化させる工程と、
前記再活性化されたクリーニングガスを、第2のプラズマ源にて再々活性化させる工程と、
前記再々活性化されたクリーニングガスを、前記プロセスチャンバー内の堆積物とを反応させることにより、該堆積物をガス化させる工程と、
前記再々活性化されたクリーニングガスと、前記堆積物とが反応したものを排気させる工程と、を含み、
前記第3のプラズマ源は、前記第1のプラズマ源と前記第2のプラズマ源の間とをつなぐ複数の配管にそれぞれ設置され、かつ、該第3のプラズマ源は、該第1のプラズマ源よりも、前記プロセスチャンバーに近い位置に設けられていること、を具備することを特徴とするプラズマ処理装置のプロセスチャンバーのクリーニング方法。 - 請求項1記載において、
第2のプラズマ源にて再々活性化させる工程は、前記プロセスチャンバー内で、in-situプラズマ法にて、再々活性化することを特徴とするプラズマ処理装置のプロセスチャンバーのクリーニング方法。 - プラズマ処理装置のプロセスチャンバーのクリーニング装置であって、
クリーニングガスを活性化させる第1のプラズマ源と、
前記活性化されたクリーニングガスを再活性化させる第3のプラズマ源と、
前記再活性化されたクリーニングガスを再々活性化させる第2のプラズマ源と、
前記第2のプラズマ源を有する前記プロセスチャンバーと、
前記プロセスチャンバーにて前記再々活性化されたクリーニングガスと前記プロセスチャンバー内の堆積物との反応物を排気させる排気装置と、を含み、
前記第3のプラズマ源は、前記第1のプラズマ源と前記第2のプラズマ源の間とをつなぐ複数の配管にそれぞれ設置され、かつ、該第3のプラズマ源は、前記第1のプラズマ源よりも、前記プロセスチャンバーに近い位置に設けられていること、を具備することを特徴とするプラズマ処理装置のプロセスチャンバーのクリーニング装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003333553A JP3855982B2 (ja) | 2003-09-25 | 2003-09-25 | クリーニング方法及びクリーニング装置 |
US10/946,361 US20050082001A1 (en) | 2003-09-25 | 2004-09-21 | Cleaning method and cleaning device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003333553A JP3855982B2 (ja) | 2003-09-25 | 2003-09-25 | クリーニング方法及びクリーニング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101309A JP2005101309A (ja) | 2005-04-14 |
JP3855982B2 true JP3855982B2 (ja) | 2006-12-13 |
Family
ID=34461532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003333553A Expired - Fee Related JP3855982B2 (ja) | 2003-09-25 | 2003-09-25 | クリーニング方法及びクリーニング装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050082001A1 (ja) |
JP (1) | JP3855982B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021141438A1 (ko) * | 2020-01-10 | 2021-07-15 | 주성엔지니어링(주) | 챔버 세정 방법 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006319042A (ja) * | 2005-05-11 | 2006-11-24 | Tokyo Electron Ltd | プラズマクリーニング方法、成膜方法 |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) * | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286819A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
US7601652B2 (en) * | 2005-06-21 | 2009-10-13 | Applied Materials, Inc. | Method for treating substrates and films with photoexcitation |
JP4282650B2 (ja) * | 2005-10-03 | 2009-06-24 | エルピーダメモリ株式会社 | プラズマ処理装置 |
KR100819096B1 (ko) * | 2006-11-21 | 2008-04-02 | 삼성전자주식회사 | Peox공정을 진행하는 반도체 제조설비의 리모트 플라즈마를 이용한 세정방법 |
US20080190446A1 (en) * | 2007-02-13 | 2008-08-14 | Ranade Rajiv M | Control of dry clean process in wafer processing |
EP2176444A1 (en) * | 2007-07-17 | 2010-04-21 | Applied Materials, Inc. | Clean rate improvement by pressure controlled remote plasma source |
US8262800B1 (en) | 2008-02-12 | 2012-09-11 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition reactors |
TWI386987B (zh) * | 2008-03-25 | 2013-02-21 | Advanced Semiconductor Eng | 電漿清洗裝置、用於電漿清洗裝置之載具及電漿清洗之方法 |
CN102089848B (zh) * | 2008-07-09 | 2013-05-22 | 欧瑞康太阳能股份公司(特吕巴赫) | 远程等离子体清洗方法和用于应用所述方法的设备 |
US8501624B2 (en) * | 2008-12-04 | 2013-08-06 | Varian Semiconductor Equipment Associates, Inc. | Excited gas injection for ion implant control |
US8591659B1 (en) * | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
WO2011141986A1 (ja) * | 2010-05-10 | 2011-11-17 | 株式会社アルバック | プラズマ成膜装置及び成膜方法 |
US20150361547A1 (en) * | 2014-06-13 | 2015-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for cleaning chemical vapor deposition chamber |
JP6552206B2 (ja) | 2015-02-02 | 2019-07-31 | 東京エレクトロン株式会社 | 排気管無害化方法及び成膜装置 |
US10161034B2 (en) * | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5788778A (en) * | 1996-09-16 | 1998-08-04 | Applied Komatsu Technology, Inc. | Deposition chamber cleaning technique using a high power remote excitation source |
US6432255B1 (en) * | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
-
2003
- 2003-09-25 JP JP2003333553A patent/JP3855982B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-21 US US10/946,361 patent/US20050082001A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021141438A1 (ko) * | 2020-01-10 | 2021-07-15 | 주성엔지니어링(주) | 챔버 세정 방법 |
Also Published As
Publication number | Publication date |
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US20050082001A1 (en) | 2005-04-21 |
JP2005101309A (ja) | 2005-04-14 |
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