JP3804747B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3804747B2
JP3804747B2 JP23696599A JP23696599A JP3804747B2 JP 3804747 B2 JP3804747 B2 JP 3804747B2 JP 23696599 A JP23696599 A JP 23696599A JP 23696599 A JP23696599 A JP 23696599A JP 3804747 B2 JP3804747 B2 JP 3804747B2
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Prior art keywords
lead frame
semiconductor chip
semiconductor device
copper
polyimide
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Expired - Fee Related
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JP23696599A
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JP2001068486A (ja
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正博 辻
恒守 山口
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP23696599A priority Critical patent/JP3804747B2/ja
Priority to US09/644,572 priority patent/US6404066B1/en
Publication of JP2001068486A publication Critical patent/JP2001068486A/ja
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Publication of JP3804747B2 publication Critical patent/JP3804747B2/ja
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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体装置の製造方法、とくに半導体チップを銅合金からなるリードフレーム上に接合するのにポリイミド系の接着剤（ペースト）を用いたことを特徴とする半導体装置の製造方法に関するものである。
【０００２】
【従来の技術】
半導体装置は、図３に示すように、一般にリードフレームのダイパット１上にＡｇペースト等の接着剤３で半導体チップ４を接合し、半導体チップ４の電極パット６とリードフレームの各端子のインナーリード部２を金線等５で接続し、それを封止樹脂で封止した構造を有している。又、リードフレームのインナーリード部２の一部分（図のハッチングの部分）には大気中で金線５とインナーリード部が接続できるように、一般にＡｇメッキが施されている。
ところで、パッケージが非常に小さい場合や、パッケージに比べダイパットが非常に大きい場合、インナーリードが非常に短くなる設計しか出来ず、この様な状態でインナーリード部にＡｇメッキを施すと、Ａｇメッキがインナーリードだけで納まらず、パッケージの外まで漏れてしまう不具合が発生する。
図４は、図３のインナーリード２の一部を拡大して示した図であって、図中Ｐはパッケージラインを示している。図示のようにメッキエリアの小さなリードフレームにメッキを行った場合は、メッキがメッキエリアのＭＡＸ値を越え、パッケージ外部に漏れることは避けられない。
Ａｇメッキがパッケージ外部まで漏れてしまうと、図５に示すようにＡｇのマイグレーションや耐湿信頼性の劣化という信頼性上の重大な不具合を発生させる。
以上の理由から、パッケージが非常に小さい場合やパッケージに比べダイパットが非常に大きい場合は、リードフレームのインナーリード部２の一部にＡｇメッキを施すには非常に困難であり、Ａｇメッキの代わりにＣｕメッキを施すのが一般的である。
【０００３】
ここで、Ｃｕメッキを施したリードフレームについてみると、それが例えば４２Ｎｉ等の鉄系合金にＣｕメッキを施したリードフレームである場合は、半導体チップの裏面に金を１５０００〜３００００Å程度蒸着し還元雰囲気中で４５０〜５５０°Ｃ程度の温度をかけ、半導体チップをこの金によって直接リードフレームのダイパット上に接合するか、ダイパット上にＡｕーＳｉを用いて半導体チップを接合する。続いて半導体チップの電極パットとリードフレームのインナーリード部をこれも還元雰囲気下で３００°Ｃ程度の温度で金又は銅を主成分としたワイヤーで接続し半導体チップ、ワイヤー、リードフレームのインナーリード部を樹脂封止して半導体装置を形成している。
【０００４】
【発明が解決しようとする課題】
このように銅メッキしたリードフレームが鉄合金系のリードフレームの場合には、チップ裏面に金を１５０００〜３００００Å程度蒸着し、その金で直接接合するダイレクトボンディングか、あるいはＡｕーＳｉプリフォームを用いてボンディングするかのいずれかで、半導体チップとリードフレームとの接合が可能である。
しかしながら、銅メッキしたリードフレームが銅合金の場合には、ダイレクトボンディングやＡｕーＳｉダイボンディングを行おうとしても、半導体チップとリードフレームの熱膨張係数が大きく異なるため、半導体チップとリードフレームとの接合時の温度変化に伴う熱膨張・収縮により、半導体チップにクラックが発生してしまうため、この方法では製造できない。
また、銅フレームと半導体チップを接合するときに、通常使用されるエポキシ樹脂系のＡｇペーストでは、１５０°Ｃ〜２００°Ｃ程度でＡｇペーストを硬化させ、その後２００〜２５０°Ｃ程度でワイヤボンディングを行うが、本半導体装置は、リードフレームのインナーリード部にＡｇメッキを施していないため、リードフレーム表面の酸化膜を除去するために還元を行う必要がある。
短時間で還元するためには、３００°Ｃ以上の温度を与える必要がある。ところが、エポシキ樹脂系のＡｇペーストは３００°Ｃ以上の温度をかけると、樹脂が熱分解し半導体チップとリードフレームとの接合信頼性が著しく低下する。また、これを防ぐためにリードフレームに与える温度を３００°未満に抑えると、今度は、リードフレームのインナーリード部と金線の接合信頼性が大きく低下し、いずれにしろ、銅合金系のリードフレームを用いた半導体装置については十分に信頼性が確保された製造方法は確立されていなかった。
そこで、本発明の目的は、銅合金リードフレームを用い、鉄合金リードフレーム品よりも高い信頼性を確保できる半導体装置を低コストな方法で得ることである。
【０００７】
【課題を解決するための手段】
請求項１の発明は、ポリイミド系ペーストを銅合金に銅メッキを行ったリードフレーム上に塗布して半導体チップを登載し、排気により１０−１〜１０−２Torr程度の真空雰囲気を維持しつつ約３００°Ｃ、約６０分間 加熱して前記ポリイミド系ペーストを硬化し、次に、３００〜４５０°Ｃのフォーミングガス中で還元しつつ半導体チップの電極とリードフレームの各端子のワイヤーボンディングを行うことを特徴とする半導体装置の製造方法である。
【０００８】
請求項２の発明は、請求項１に記載された半導体装置の製造方法において、前記フォーミングガスはＨ２がおおむね５〜１０％、残りがＮ２から成るものであることを特徴とする半導体装置の製造方法である。
【０００９】
【発明の実施の形態】
ポリイミド系接着剤はＡｕーＳｉと比べ、弾性率が約１／２０であること及び、４５０°Ｃの高温下でも数分程度なら耐えることが出来るため、本発明は、ポリイミド系接着剤のこの特性に着目して、これを銅合金からなるリードフレームと半導体チップとの接着剤として用いたものである。
即ち、本発明に係る銅合金からなるリードブレームは、そのボンディングエリアには、既に述べたように銀メッキができないため銅メッキが施されており、銅に直接金または銅ワイヤーを付けて合金化しなければならない。ところがそのままワイヤーボンディングを行うと、銅は熱によって酸化が促進される結果、そのままではワイヤーボンディングを行うことはできない。
そこで、フォーミングガス中で銅フレームの酸化を還元しながらワイヤーボンディングを行うものであって、本発明は、銅合金系のリードフレームと半導体チップをポリイミド系の接着剤を用いて接合させ、その後、フォーミングガス中で、銅の酸化を還元し、かつフォーミングガス中でワイヤーボンディングを行うようにしたのである。
【００１０】
（実施例）
本発明に係る半導体装置の製造工程について図１を参考にして説明する。
まず、ポリイミド系ペースト３を、ポッティングにより銅メッキを施した銅合金からなるリードフレーム１のダイパット部１ａに塗布し（図１Ａ）、その上に半導体チップ４を登載する（図１Ｂ）。
次に、ポリイミド系ペースト３で接合されたリードフレーム１と半導体チップ４を、約１０−１〜１０−２Torrの真空オーブン中において、約１２０°Ｃで６０分間程度の加熱し、ポリイミド系ペースト中の溶剤（例えばＮーメチルピロリドン）を飛ばす。溶剤を飛ばし終えたところで、次にポリイミド系ペーストを完全に硬化させるため、約３００°Ｃで約６０分間加熱する。
以上の加熱工程中、銅フレームの酸化を抑制し、かつ、硬化中のペーストから発生するアウトガスが銅フレームやチップに付着させなようにするため、真空オーブンは常に吸引排気を行う。
【００１１】
ポリイミド系ペーストが完全に硬化したところで、図２Ａの斜視図及び図２Ｂの側面図に示すようにメッキした銅の表面に直接金線５を付け合金化させてワイヤーボンディングを行う。既に述べたように、ポリイミド系接着剤は、４５０°Ｃの高温下でも数分なら十分耐えることができるので、この工程は、３００〜４５０°Ｈ２、５〜１０％、残りがＮ２のフォーミングガス中において銅の酸化を防止しながらを行う。
因に、銀ペーストは３００°Ｃ程度で熱分解してしまうため、このワイヤーボンディング工程の実施は不可能であり、使用することはできない。
このように、ポリイミド系接着剤はＡｕーＳｉと比べ、弾性率が約１／２０であることから、リードフレームと半導体チップとの熱膨張係数差が大きく異なっていてもチップクラックは発生することはなく、また、ポリイミド系接着剤３は４５０°Ｃの高温下での還元にも耐えることができるため、それを用いることにより銅メッキした銅合金からなるリードフレームに対しワイヤー（金線）５を取り付けることができる。このようにして作製された半導体装置のリードフレーム１、半導体チップ４、金線５、インナーリード２の一部を例えば図３に示す従来のものと同様にパッケージラインに沿って樹脂封止してパッケージを作製することが出来る。
【００１２】
【発明の効果】
請求項１、２に対応する効果：ポリイミド系接着剤を用いたため、銀メッキを施していない、つまり銅メッキを施した銅合金のリードフレームを用い、鉄合金リードフレーム品以上の信頼性を有した半導体装置を容易に得ることができる。また、銅の酸化を防止することができるため、銀メッキを施していないリードフレーム、つまり銅合金リードフレームに銅メッキを施したリードフレームを用いて半導体チップのパッケージングを行うことによって半導体装置を製造することができる。
【図面の簡単な説明】
【図１】 本発明の半導体装置の製造工程を説明するための図である。
【図２】 本発明の半導体を示す図であって、図２Ａはその斜視図でありかつ、図２Ｂはその側面図である。
【図３】 従来の半導体装置を説明するための図である。
【図４】 図３の一部拡大図である。
【図５】 リード間に発生する銀のマイグレーションを説明するための図である。
【符号の説明】
１…リードブレーム、１ａ…ダイパット部、２…インナーリード部、３…ペースト（ポリイミド系接着剤）、４…半導体チップ、５…ワイヤー（金線）、６…電極パット

Claims (2)

  1. ポリイミド系ペーストを銅合金に銅メッキを行ったリードフレーム上に塗布して半導体チップを登載し、排気により１０ −１ 〜１０ −２ Torr 程度の真空雰囲気を維持しつつ約３００°Ｃ、約６０分間 加熱して前記ポリイミド系ペーストを硬化し、次に、３００〜４５０°Ｃのフォーミングガス中で還元しつつ半導体チップの電極とリードフレームの各端子のワイヤーボンディングを行うことを特徴とする半導体装置の製造方法。
  2. 請求項１に記載された半導体装置の製造方法において、前記フォーミングガスは、Ｈ ２ がおおむね５〜１０％、残りがＮ ２ から成るものであることを特徴とする半導体装置の製造方法。
JP23696599A 1999-08-24 1999-08-24 半導体装置の製造方法 Expired - Fee Related JP3804747B2 (ja)

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US7023313B2 (en) * 2003-07-16 2006-04-04 Marvell World Trade Ltd. Power inductor with reduced DC current saturation
US7307502B2 (en) * 2003-07-16 2007-12-11 Marvell World Trade Ltd. Power inductor with reduced DC current saturation
US8324872B2 (en) * 2004-03-26 2012-12-04 Marvell World Trade, Ltd. Voltage regulator with coupled inductors having high coefficient of coupling
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JP5279196B2 (ja) * 2007-05-02 2013-09-04 盛岡セイコー工業株式会社 半導体素子固定方法
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US9070392B1 (en) 2014-12-16 2015-06-30 Hutchinson Technology Incorporated Piezoelectric disk drive suspension motors having plated stiffeners
CN107735834B (zh) 2015-06-30 2019-11-19 哈钦森技术股份有限公司 具有改进的可靠性的盘驱动器头部悬架结构

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