JP3782328B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3782328B2
JP3782328B2 JP2001263610A JP2001263610A JP3782328B2 JP 3782328 B2 JP3782328 B2 JP 3782328B2 JP 2001263610 A JP2001263610 A JP 2001263610A JP 2001263610 A JP2001263610 A JP 2001263610A JP 3782328 B2 JP3782328 B2 JP 3782328B2
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Japan
Prior art keywords
layer
iii
semiconductor
gap
semiconductor layer
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JP2001263610A
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Japanese (ja)
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JP2003077840A (ja
JP2003077840A5 (https=
Inventor
宏雄 米津
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2001263610A priority Critical patent/JP3782328B2/ja
Publication of JP2003077840A publication Critical patent/JP2003077840A/ja
Publication of JP2003077840A5 publication Critical patent/JP2003077840A5/ja
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Expired - Lifetime legal-status Critical Current

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  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2001263610A 2001-08-31 2001-08-31 半導体装置 Expired - Lifetime JP3782328B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001263610A JP3782328B2 (ja) 2001-08-31 2001-08-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001263610A JP3782328B2 (ja) 2001-08-31 2001-08-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006033273A Division JP4769094B2 (ja) 2006-02-10 2006-02-10 半導体装置及びその製造方法

Publications (3)

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JP2003077840A JP2003077840A (ja) 2003-03-14
JP2003077840A5 JP2003077840A5 (https=) 2005-04-07
JP3782328B2 true JP3782328B2 (ja) 2006-06-07

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ID=19090338

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JP2001263610A Expired - Lifetime JP3782328B2 (ja) 2001-08-31 2001-08-31 半導体装置

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JP (1) JP3782328B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8562738B2 (en) 2004-03-11 2013-10-22 Epistar Corporation Nitride-based light-emitting device
US7928424B2 (en) 2004-03-11 2011-04-19 Epistar Corporation Nitride-based light-emitting device
US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP2012054424A (ja) * 2010-09-01 2012-03-15 Koji Tomita 太陽電池及びその製造方法
WO2014142892A1 (en) * 2013-03-14 2014-09-18 King Abdullah University Of Science And Technology Defect free single crystal thin layer
JP6923900B2 (ja) * 2017-02-24 2021-08-25 国立大学法人豊橋技術科学大学 希薄窒化物犠牲層を用いた化合物半導体薄膜の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3005281B2 (ja) * 1990-11-24 2000-01-31 京セラ株式会社 半導体素子の製造方法
JP3474917B2 (ja) * 1994-04-08 2003-12-08 日本オプネクスト株式会社 半導体装置の製造方法
JPH10326749A (ja) * 1997-03-28 1998-12-08 Sharp Corp 化合物半導体の製造方法
JP2000049104A (ja) * 1998-05-29 2000-02-18 Sharp Corp 化合物半導体の結晶成長方法及び化合物半導体装置
JP2000031591A (ja) * 1998-07-08 2000-01-28 Toshiba Corp 半導体発光素子

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JP2003077840A (ja) 2003-03-14

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