JP3745316B2 - 半導体集積回路及びその製造方法 - Google Patents

半導体集積回路及びその製造方法 Download PDF

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Publication number
JP3745316B2
JP3745316B2 JP2002183471A JP2002183471A JP3745316B2 JP 3745316 B2 JP3745316 B2 JP 3745316B2 JP 2002183471 A JP2002183471 A JP 2002183471A JP 2002183471 A JP2002183471 A JP 2002183471A JP 3745316 B2 JP3745316 B2 JP 3745316B2
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JP
Japan
Prior art keywords
layer
inductor
metal layer
laminated film
integrated circuit
Prior art date
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Expired - Fee Related
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JP2002183471A
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English (en)
Japanese (ja)
Other versions
JP2004031520A5 (enExample
JP2004031520A (ja
Inventor
正之 冨留宮
良太 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Priority to JP2002183471A priority Critical patent/JP3745316B2/ja
Priority to TW092115175A priority patent/TWI224854B/zh
Priority to US10/600,104 priority patent/US7053165B2/en
Priority to FR0350243A priority patent/FR2841381B1/fr
Publication of JP2004031520A publication Critical patent/JP2004031520A/ja
Publication of JP2004031520A5 publication Critical patent/JP2004031520A5/ja
Application granted granted Critical
Publication of JP3745316B2 publication Critical patent/JP3745316B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002183471A 2002-06-24 2002-06-24 半導体集積回路及びその製造方法 Expired - Fee Related JP3745316B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002183471A JP3745316B2 (ja) 2002-06-24 2002-06-24 半導体集積回路及びその製造方法
TW092115175A TWI224854B (en) 2002-06-24 2003-06-05 Semiconductor integrated circuit and method of manufacturing the same
US10/600,104 US7053165B2 (en) 2002-06-24 2003-06-20 Semiconductor integrated circuit including an inductor and method of manufacturing the same
FR0350243A FR2841381B1 (fr) 2002-06-24 2003-06-23 Circuit integre a semi-conducteur et un procede de fabrication du circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002183471A JP3745316B2 (ja) 2002-06-24 2002-06-24 半導体集積回路及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004031520A JP2004031520A (ja) 2004-01-29
JP2004031520A5 JP2004031520A5 (enExample) 2005-09-29
JP3745316B2 true JP3745316B2 (ja) 2006-02-15

Family

ID=29720212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002183471A Expired - Fee Related JP3745316B2 (ja) 2002-06-24 2002-06-24 半導体集積回路及びその製造方法

Country Status (4)

Country Link
US (1) US7053165B2 (enExample)
JP (1) JP3745316B2 (enExample)
FR (1) FR2841381B1 (enExample)
TW (1) TWI224854B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7259639B2 (en) 2002-03-29 2007-08-21 M/A-Com Eurotec, B.V. Inductor topologies and decoupling structures for filters used in broadband applications, and design methodology thereof
US6856003B2 (en) * 2002-09-05 2005-02-15 Industrial Technology Research Institute Microelectronic 3-D solenoid of circular cross-section and method for fabrication
US7126443B2 (en) * 2003-03-28 2006-10-24 M/A-Com, Eurotec, B.V. Increasing performance of planar inductors used in broadband applications
JP4464127B2 (ja) * 2003-12-22 2010-05-19 Ｎｅｃエレクトロニクス株式会社 半導体集積回路及びその製造方法
JP4291164B2 (ja) * 2004-01-08 2009-07-08 富士通メディアデバイス株式会社 弾性表面波装置
US7410894B2 (en) * 2005-07-27 2008-08-12 International Business Machines Corporation Post last wiring level inductor using patterned plate process
JP5457182B2 (ja) 2006-09-14 2014-04-02 サーキュライト・インコーポレーテッド 血管内血液ポンプおよびカテーテル
US20080186123A1 (en) * 2007-02-07 2008-08-07 Industrial Technology Research Institute Inductor devices
KR100946753B1 (ko) * 2007-10-18 2010-03-11 엘아이지넥스원 주식회사 수중 음향센서
US9269485B2 (en) * 2007-11-29 2016-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of creating spiral inductor having high Q value
US20090140383A1 (en) * 2007-11-29 2009-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of creating spiral inductor having high q value
US7666688B2 (en) * 2008-01-25 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a coil inductor
US7935549B2 (en) 2008-12-09 2011-05-03 Renesas Electronics Corporation Seminconductor device
EP2337063B1 (en) * 2009-12-17 2013-10-23 Nxp B.V. On chip integrated inductor and manufacturing method therefor
TWI499011B (zh) * 2011-02-10 2015-09-01 國立清華大學 封裝結構及其製作方法
DE102011016159B3 (de) * 2011-04-05 2012-10-18 Micronas Gmbh Anordnung aus einem integrierten passiven Bauelement und einem auf einem Metallträger angeordneten Halbleiterkörper
US9219106B2 (en) * 2011-08-05 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated inductor
CN102569032B (zh) * 2012-01-16 2014-05-28 中国科学院上海微系统与信息技术研究所 多层金属化薄膜叠加制作电感元件的方法
JP2012209278A (ja) * 2012-08-03 2012-10-25 Toshiba Lighting & Technology Corp 点灯回路および照明装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2072277A1 (en) * 1991-07-03 1993-01-04 Nobuo Shiga Inductance element
US5738931A (en) 1994-09-16 1998-04-14 Kabushiki Kaisha Toshiba Electronic device and magnetic device
TW362222B (en) 1995-11-27 1999-06-21 Matsushita Electric Industrial Co Ltd Coiled component and its production method
US6492705B1 (en) 1996-06-04 2002-12-10 Intersil Corporation Integrated circuit air bridge structures and methods of fabricating same
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
JP3661380B2 (ja) 1997-12-12 2005-06-15 富士電機デバイステクノロジー株式会社 平面型インダクタ
JP4200631B2 (ja) 2000-03-29 2008-12-24 沖電気工業株式会社 オンチップ・コイルとその製造方法
JP2002043520A (ja) 2000-07-19 2002-02-08 Sony Corp 半導体装置及びその製造方法
FR2813987B1 (fr) * 2000-09-12 2003-01-10 Memscap Microcomposant du type micro-inductance ou micro-transformateur
JP2002123915A (ja) 2000-10-16 2002-04-26 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及び浮上式磁気ヘッド並びにスピンバルブ型薄膜磁気素子の製造方法
US6593838B2 (en) * 2000-12-19 2003-07-15 Atheros Communications Inc. Planar inductor with segmented conductive plane
US6752447B2 (en) 2000-12-19 2004-06-22 Bombardier Recreational Products Inc. Windshield assembly for an all terrain vehicle

Also Published As

Publication number Publication date
TW200405547A (en) 2004-04-01
US20040004266A1 (en) 2004-01-08
FR2841381B1 (fr) 2008-03-28
TWI224854B (en) 2004-12-01
FR2841381A1 (fr) 2003-12-26
US7053165B2 (en) 2006-05-30
JP2004031520A (ja) 2004-01-29

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