JP3741154B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3741154B2
JP3741154B2 JP31351994A JP31351994A JP3741154B2 JP 3741154 B2 JP3741154 B2 JP 3741154B2 JP 31351994 A JP31351994 A JP 31351994A JP 31351994 A JP31351994 A JP 31351994A JP 3741154 B2 JP3741154 B2 JP 3741154B2
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JP
Japan
Prior art keywords
conductivity type
layer
forming
mask pattern
type region
Prior art date
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Expired - Fee Related
Application number
JP31351994A
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English (en)
Japanese (ja)
Other versions
JPH07202015A (ja
Inventor
容煕 李
永雨 徐
中鉉 辛
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH07202015A publication Critical patent/JPH07202015A/ja
Application granted granted Critical
Publication of JP3741154B2 publication Critical patent/JP3741154B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP31351994A 1993-12-17 1994-12-16 半導体装置の製造方法 Expired - Fee Related JP3741154B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019930028221A KR0138352B1 (ko) 1993-12-17 1993-12-17 반도체 장치 및 그의 제조방법
KR1993P28221 1993-12-17

Publications (2)

Publication Number Publication Date
JPH07202015A JPH07202015A (ja) 1995-08-04
JP3741154B2 true JP3741154B2 (ja) 2006-02-01

Family

ID=19371426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31351994A Expired - Fee Related JP3741154B2 (ja) 1993-12-17 1994-12-16 半導体装置の製造方法

Country Status (6)

Country Link
US (2) US5484739A (enExample)
JP (1) JP3741154B2 (enExample)
KR (1) KR0138352B1 (enExample)
DE (1) DE4444686B4 (enExample)
GB (2) GB2285173B (enExample)
TW (1) TW257888B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654213A (en) * 1995-10-03 1997-08-05 Integrated Device Technology, Inc. Method for fabricating a CMOS device
US5986314A (en) * 1997-10-08 1999-11-16 Texas Instruments Incorporated Depletion mode MOS capacitor with patterned Vt implants
JP3554483B2 (ja) 1998-04-22 2004-08-18 シャープ株式会社 Ｃｍｏｓ型固体撮像装置
US7019672B2 (en) * 1998-12-24 2006-03-28 Synaptics (Uk) Limited Position sensor
KR100328810B1 (ko) * 1999-07-08 2002-03-14 윤종용 반도체 장치를 위한 콘택 구조 및 제조 방법
EP1412912B1 (en) 2001-05-21 2008-06-18 Synaptics (UK) Limited Position sensor
GB2403017A (en) 2002-03-05 2004-12-22 Synaptics Position sensor
AU2003232360A1 (en) 2002-06-05 2003-12-22 Synaptics (Uk) Limited Signal transfer method and apparatus
KR20040072446A (ko) * 2003-02-12 2004-08-18 삼성전자주식회사 반도체 기판의 가장자리 상의 금속막을 선택적으로제거하는 방법
GB0317370D0 (en) 2003-07-24 2003-08-27 Synaptics Uk Ltd Magnetic calibration array
GB0319945D0 (en) 2003-08-26 2003-09-24 Synaptics Uk Ltd Inductive sensing system
JP2008084901A (ja) * 2006-09-26 2008-04-10 Nec Electronics Corp 半導体装置およびその製造方法
WO2008139216A2 (en) 2007-05-10 2008-11-20 Cambridge Integrated Circuits Limited Transducer
CA2646037C (en) 2007-12-11 2017-11-28 Tyco Healthcare Group Lp Ecg electrode connector
USD737979S1 (en) 2008-12-09 2015-09-01 Covidien Lp ECG electrode connector
GB2488389C (en) 2010-12-24 2018-08-22 Cambridge Integrated Circuits Ltd Position sensing transducer
EP2734106B1 (en) 2011-07-22 2019-09-18 Kpr U.S., Llc Ecg electrode connector
GB2503006B (en) 2012-06-13 2017-08-09 Cambridge Integrated Circuits Ltd Position sensing transducer
USD771818S1 (en) 2013-03-15 2016-11-15 Covidien Lp ECG electrode connector
ES2726185T3 (es) 2013-03-15 2019-10-02 Kpr Us Llc Conector de electrodo con un elemento conductor
US9408546B2 (en) 2013-03-15 2016-08-09 Covidien Lp Radiolucent ECG electrode system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5775453A (en) * 1980-10-29 1982-05-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS60180169A (ja) * 1984-02-27 1985-09-13 Nec Corp 絶縁ゲ−ト型電界効果半導体装置
KR940006668B1 (ko) * 1984-11-22 1994-07-25 가부시끼가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치의 제조방법
JP2559397B2 (ja) * 1987-03-16 1996-12-04 株式会社日立製作所 半導体集積回路装置及びその製造方法
JPH0279462A (ja) * 1988-09-14 1990-03-20 Toshiba Corp 半導体記憶装置
JPH02246369A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
GB2233492A (en) * 1989-06-16 1991-01-09 Philips Nv A method of manufacturing a semiconductor bimos device
US5237187A (en) * 1990-11-30 1993-08-17 Hitachi, Ltd. Semiconductor memory circuit device and method for fabricating same
US5128272A (en) * 1991-06-18 1992-07-07 National Semiconductor Corporation Self-aligned planar monolithic integrated circuit vertical transistor process
JP2966647B2 (ja) * 1992-06-15 1999-10-25 三菱電機株式会社 半導体装置およびその製造方法
US5232874A (en) * 1992-06-22 1993-08-03 Micron Technology, Inc. Method for producing a semiconductor wafer having shallow and deep buried contacts

Also Published As

Publication number Publication date
GB9425338D0 (en) 1995-02-15
TW257888B (enExample) 1995-09-21
US5484739A (en) 1996-01-16
GB9720688D0 (en) 1997-11-26
GB2315159B (en) 1998-05-13
US5818091A (en) 1998-10-06
JPH07202015A (ja) 1995-08-04
GB2285173B (en) 1998-05-06
GB2285173A (en) 1995-06-28
KR950021547A (ko) 1995-07-26
GB2315159A (en) 1998-01-21
DE4444686A1 (de) 1995-06-22
DE4444686B4 (de) 2009-07-02
KR0138352B1 (ko) 1998-04-28

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