JP3740117B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP3740117B2
JP3740117B2 JP2002329243A JP2002329243A JP3740117B2 JP 3740117 B2 JP3740117 B2 JP 3740117B2 JP 2002329243 A JP2002329243 A JP 2002329243A JP 2002329243 A JP2002329243 A JP 2002329243A JP 3740117 B2 JP3740117 B2 JP 3740117B2
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Japan
Prior art keywords
power semiconductor
main surface
semiconductor device
mold resin
resin casing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002329243A
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English (en)
Japanese (ja)
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JP2004165406A5 (de
JP2004165406A (ja
Inventor
泰 中島
太志 佐々木
享 木村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32212020&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3740117(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002329243A priority Critical patent/JP3740117B2/ja
Priority to US10/389,954 priority patent/US6903457B2/en
Priority to KR1020030039682A priority patent/KR100709278B1/ko
Priority to DE2003131335 priority patent/DE10331335C5/de
Priority to CNB031476058A priority patent/CN1284233C/zh
Publication of JP2004165406A publication Critical patent/JP2004165406A/ja
Publication of JP2004165406A5 publication Critical patent/JP2004165406A5/ja
Publication of JP3740117B2 publication Critical patent/JP3740117B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2002329243A 2002-11-13 2002-11-13 電力用半導体装置 Expired - Lifetime JP3740117B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002329243A JP3740117B2 (ja) 2002-11-13 2002-11-13 電力用半導体装置
US10/389,954 US6903457B2 (en) 2002-11-13 2003-03-18 Power semiconductor device
KR1020030039682A KR100709278B1 (ko) 2002-11-13 2003-06-19 전력용 반도체장치
DE2003131335 DE10331335C5 (de) 2002-11-13 2003-07-10 Leistungs-Halbleitervorrichtung
CNB031476058A CN1284233C (zh) 2002-11-13 2003-07-14 电功率半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002329243A JP3740117B2 (ja) 2002-11-13 2002-11-13 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2004165406A JP2004165406A (ja) 2004-06-10
JP2004165406A5 JP2004165406A5 (de) 2005-07-21
JP3740117B2 true JP3740117B2 (ja) 2006-02-01

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Application Number Title Priority Date Filing Date
JP2002329243A Expired - Lifetime JP3740117B2 (ja) 2002-11-13 2002-11-13 電力用半導体装置

Country Status (5)

Country Link
US (1) US6903457B2 (de)
JP (1) JP3740117B2 (de)
KR (1) KR100709278B1 (de)
CN (1) CN1284233C (de)
DE (1) DE10331335C5 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988607B2 (ja) * 2002-10-01 2007-10-10 株式会社デンソー ハウジング
US7436060B2 (en) * 2004-06-09 2008-10-14 Lsi Corporation Semiconductor package and process utilizing pre-formed mold cap and heatspreader assembly
JP4583122B2 (ja) * 2004-09-28 2010-11-17 三菱電機株式会社 半導体装置及びその製造方法
CN100420049C (zh) * 2005-02-02 2008-09-17 银河制版印刷有限公司 发光二极管模块的基板结构
CN101032849B (zh) * 2006-03-08 2010-06-09 深圳富泰宏精密工业有限公司 定位治具的成型方法
DE102006013017B4 (de) * 2006-03-20 2014-11-06 R. Stahl Schaltgeräte GmbH Gehäuse mit Wärmebrücke
KR101391925B1 (ko) * 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
JP5288161B2 (ja) * 2008-02-14 2013-09-11 東芝ライテック株式会社 発光モジュール及び照明装置
US7821141B2 (en) * 2008-02-22 2010-10-26 Infineon Technologies Ag Semiconductor device
US7919854B2 (en) * 2008-08-15 2011-04-05 Infineon Technologies Ag Semiconductor module with two cooling surfaces and method
DE102009002993B4 (de) * 2009-05-11 2012-10-04 Infineon Technologies Ag Leistungshalbleitermodul mit beabstandeten Schaltungsträgern
US8482904B2 (en) * 2010-05-25 2013-07-09 Lear Corporation Power module with current sensing
JP5380376B2 (ja) 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
JP5569400B2 (ja) * 2011-01-07 2014-08-13 株式会社デンソー 半導体モジュール
US8878483B2 (en) 2011-01-14 2014-11-04 Lear Corporation Electronics unit with current sensing
CN102306637A (zh) * 2011-08-31 2012-01-04 昆山锦泰电子器材有限公司 带有三极管的组装散热片
JP5843539B2 (ja) * 2011-09-16 2016-01-13 三菱電機株式会社 半導体装置及び当該半導体装置の製造方法
DE202012013627U1 (de) 2011-09-30 2018-09-14 Rohm Co., Ltd. Halbleiterbauteil
JP5988882B2 (ja) * 2013-01-17 2016-09-07 三菱電機株式会社 半導体装置
CN105359262B (zh) * 2013-07-04 2019-02-19 三菱电机株式会社 半导体装置的制造方法、半导体装置
JP5700092B2 (ja) 2013-09-06 2015-04-15 トヨタ自動車株式会社 半導体装置
JP2016012709A (ja) * 2014-06-30 2016-01-21 サンケン電気株式会社 半導体装置
JP6327140B2 (ja) * 2014-12-15 2018-05-23 株式会社デンソー 電子装置
JP6365322B2 (ja) * 2015-01-23 2018-08-01 三菱電機株式会社 半導体装置
DE102015112450B3 (de) * 2015-07-30 2016-12-29 Danfoss Silicon Power Gmbh Leistungshalbleiterbaugruppe und Verfahren zum Herstellen eines Leistungsmoduls und der Leistungshalbleiterbaugruppe
JP6526323B2 (ja) * 2016-04-04 2019-06-05 三菱電機株式会社 パワーモジュール、パワー半導体装置及びパワーモジュール製造方法
JP2017224788A (ja) * 2016-06-17 2017-12-21 ミヨシ電子株式会社 電子回路装置
CN110914975B (zh) 2017-07-12 2023-08-01 日立能源瑞士股份公司 功率半导体模块
EP3444839A1 (de) * 2017-08-18 2019-02-20 Infineon Technologies Austria AG Anordnung und verfahren zur montage einer elektronischen komponente auf ein substrat
EP3682475A1 (de) 2017-09-15 2020-07-22 Finar Module Sagl Verpackungsverfahren und verbindungstechnologie für eine elektronische vorrichtung
DE102018217456B4 (de) * 2018-10-11 2020-07-09 Conti Temic Microelectronic Gmbh Elektronische Steuervorrichtung und Verfahren zur Herstellung einer elektronischen Steuervorrichtung
EP3660896A1 (de) * 2018-11-30 2020-06-03 Infineon Technologies AG Halbleiteranordnung
DE102019111367A1 (de) * 2019-05-02 2020-11-05 Danfoss Silicon Power Gmbh Leistungselektronik-Modul mit verbesserter Kühlung
JP7149907B2 (ja) 2019-09-04 2022-10-07 三菱電機株式会社 半導体装置および半導体素子
JP2022010604A (ja) * 2020-06-29 2022-01-17 日本電産サンキョー株式会社 電子機器
US11444002B2 (en) * 2020-07-29 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure
CN112864113A (zh) * 2021-02-10 2021-05-28 华为技术有限公司 功率器件、功率器件组件与相关装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539875A (en) * 1968-09-25 1970-11-10 Philips Corp Hardware envelope with semiconductor mounting arrangements
JPS59218759A (ja) * 1983-05-27 1984-12-10 Toshiba Corp 半導体装置
CA1307355C (en) * 1988-05-26 1992-09-08 David C. Degree Soft-faced semiconductor component backing
KR100307465B1 (ko) * 1992-10-20 2001-12-15 야기 추구오 파워모듈
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
JP3225457B2 (ja) * 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
DE19630173C2 (de) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Leistungsmodul mit Halbleiterbauelementen
DE19646396C2 (de) * 1996-11-11 2001-06-28 Semikron Elektronik Gmbh Leistungshalbleitermodul für verschiedene Schaltungsvarianten
US6583444B2 (en) * 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JPH1117071A (ja) * 1997-06-23 1999-01-22 Hitachi Ltd 半導体装置
JP2000228490A (ja) 1999-02-05 2000-08-15 Hitachi Ltd パワー半導体モジュール
JP3690171B2 (ja) * 1999-03-16 2005-08-31 株式会社日立製作所 複合材料とその製造方法及び用途
JP2001059923A (ja) * 1999-06-16 2001-03-06 Seiko Epson Corp 光モジュール及びその製造方法、半導体装置並びに光伝達装置
JP3866880B2 (ja) * 1999-06-28 2007-01-10 株式会社日立製作所 樹脂封止型電子装置
JP4540884B2 (ja) * 2001-06-19 2010-09-08 三菱電機株式会社 半導体装置
JP2003007933A (ja) * 2001-06-27 2003-01-10 Denso Corp 樹脂封止型半導体装置

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KR20040042793A (ko) 2004-05-20
DE10331335A1 (de) 2004-06-09
JP2004165406A (ja) 2004-06-10
CN1284233C (zh) 2006-11-08
CN1501484A (zh) 2004-06-02
DE10331335B4 (de) 2008-10-16
US6903457B2 (en) 2005-06-07
KR100709278B1 (ko) 2007-04-19
US20040089931A1 (en) 2004-05-13

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