JP3712218B2 - 化学増幅型ホトレジスト組成物 - Google Patents

化学増幅型ホトレジスト組成物 Download PDF

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Publication number
JP3712218B2
JP3712218B2 JP01158197A JP1158197A JP3712218B2 JP 3712218 B2 JP3712218 B2 JP 3712218B2 JP 01158197 A JP01158197 A JP 01158197A JP 1158197 A JP1158197 A JP 1158197A JP 3712218 B2 JP3712218 B2 JP 3712218B2
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JP
Japan
Prior art keywords
acid
group
chemically amplified
photoresist composition
methacrylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP01158197A
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English (en)
Japanese (ja)
Other versions
JPH10207069A (ja
JPH10207069A5 (enExample
Inventor
英夫 羽田
和史 佐藤
博司 駒野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
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Publication date
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Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP01158197A priority Critical patent/JP3712218B2/ja
Publication of JPH10207069A publication Critical patent/JPH10207069A/ja
Priority to US09/562,458 priority patent/US6388101B1/en
Publication of JPH10207069A5 publication Critical patent/JPH10207069A5/ja
Application granted granted Critical
Publication of JP3712218B2 publication Critical patent/JP3712218B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D307/00Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/02Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
    • C07D307/26Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member
    • C07D307/30Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D307/32Oxygen atoms
    • C07D307/33Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/55Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP01158197A 1997-01-24 1997-01-24 化学増幅型ホトレジスト組成物 Expired - Fee Related JP3712218B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01158197A JP3712218B2 (ja) 1997-01-24 1997-01-24 化学増幅型ホトレジスト組成物
US09/562,458 US6388101B1 (en) 1997-01-24 2000-05-02 Chemical-sensitization photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01158197A JP3712218B2 (ja) 1997-01-24 1997-01-24 化学増幅型ホトレジスト組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003207338A Division JP3719606B2 (ja) 2003-08-12 2003-08-12 化学増幅型ホトレジスト組成物

Publications (3)

Publication Number Publication Date
JPH10207069A JPH10207069A (ja) 1998-08-07
JPH10207069A5 JPH10207069A5 (enExample) 2004-08-26
JP3712218B2 true JP3712218B2 (ja) 2005-11-02

Family

ID=11781884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01158197A Expired - Fee Related JP3712218B2 (ja) 1997-01-24 1997-01-24 化学増幅型ホトレジスト組成物

Country Status (2)

Country Link
US (1) US6388101B1 (enExample)
JP (1) JP3712218B2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
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US6214517B1 (en) 1997-02-17 2001-04-10 Fuji Photo Film Co., Ltd. Positive photoresist composition
KR100574574B1 (ko) 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
WO2001004706A1 (en) * 1999-07-12 2001-01-18 Mitsubishi Rayon Co., Ltd. Chemical amplification resist composition
US6787283B1 (en) 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP4576737B2 (ja) 2000-06-09 2010-11-10 Jsr株式会社 感放射線性樹脂組成物
JP4567147B2 (ja) * 2000-06-21 2010-10-20 日本曹達株式会社 ラクトン環を側鎖に有する(メタ)アクリル酸重合体及びその製造方法
WO2002004532A1 (en) * 2000-07-12 2002-01-17 Mitsubishi Rayon Co., Ltd. Resins for resists and chemically amplifiable resist compositions
US6727039B2 (en) * 2000-09-25 2004-04-27 Fuji Photo Film Co., Ltd. Positive photoresist composition
JP2002116542A (ja) * 2000-10-06 2002-04-19 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
KR100832954B1 (ko) 2000-12-13 2008-05-27 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 고분자 및 포토레지스트용 수지 조성물
KR100688486B1 (ko) * 2000-12-14 2007-03-09 삼성전자주식회사 프로텍팅 그룹이 있는 감광성 중합체 및 이를 포함하는포토레지스트 조성물
JP4117112B2 (ja) 2001-03-30 2008-07-16 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP4255100B2 (ja) 2001-04-06 2009-04-15 富士フイルム株式会社 ArFエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
TWI291953B (enExample) 2001-10-23 2008-01-01 Mitsubishi Rayon Co
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
TWI375121B (en) * 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
JP4731200B2 (ja) 2005-05-10 2011-07-20 丸善石油化学株式会社 半導体リソグラフィー用共重合体の製造方法
JP4796792B2 (ja) * 2005-06-28 2011-10-19 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5030474B2 (ja) * 2006-05-18 2012-09-19 丸善石油化学株式会社 半導体リソグラフィー用樹脂組成物
JP2008106084A (ja) 2006-10-23 2008-05-08 Maruzen Petrochem Co Ltd 半導体リソグラフィー用共重合体、組成物並びに該共重合体の製造方法
JP4355011B2 (ja) 2006-11-07 2009-10-28 丸善石油化学株式会社 液浸リソグラフィー用共重合体及び組成物
JP5588095B2 (ja) 2006-12-06 2014-09-10 丸善石油化学株式会社 半導体リソグラフィー用共重合体とその製造方法
KR101446819B1 (ko) 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 반도체 리소그래피용 중합체의 제조 방법
JP5077355B2 (ja) * 2007-10-01 2012-11-21 Jsr株式会社 感放射線性組成物
JP5177374B2 (ja) * 2007-10-12 2013-04-03 三菱レイヨン株式会社 (メタ)アクリル酸エステルおよびその製造方法
JP5806800B2 (ja) * 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5427447B2 (ja) * 2008-03-28 2014-02-26 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5548406B2 (ja) 2008-08-22 2014-07-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
TWI533082B (zh) 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
CN102150083B (zh) * 2008-09-12 2013-09-04 Jsr株式会社 放射线敏感性树脂组合物及抗蚀剂图案形成方法
JP5591465B2 (ja) 2008-10-30 2014-09-17 丸善石油化学株式会社 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法
JP5232663B2 (ja) 2009-01-14 2013-07-10 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP5264575B2 (ja) 2009-03-11 2013-08-14 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5481979B2 (ja) * 2009-07-15 2014-04-23 Jsr株式会社 感放射線性樹脂組成物及びそれに用いられる重合体
JP5812006B2 (ja) 2010-09-29 2015-11-11 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP5772760B2 (ja) 2012-08-13 2015-09-02 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5573924B2 (ja) * 2012-11-09 2014-08-20 三菱レイヨン株式会社 (メタ)アクリル酸エステルおよびその製造方法
WO2014148241A1 (ja) 2013-03-22 2014-09-25 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物の製造方法
JP6323460B2 (ja) 2013-09-26 2018-05-16 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

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JP2881969B2 (ja) 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
JPH05265212A (ja) 1992-03-17 1993-10-15 Fujitsu Ltd レジスト材料およびそれを用いるパターン形成方法
JP3236073B2 (ja) 1992-06-16 2001-12-04 富士通株式会社 レジスト組成物及びそれを用いたパターン形成方法
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JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法

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Publication number Publication date
JPH10207069A (ja) 1998-08-07
US6388101B1 (en) 2002-05-14

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