JP3709668B2 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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Publication number
JP3709668B2
JP3709668B2 JP23711097A JP23711097A JP3709668B2 JP 3709668 B2 JP3709668 B2 JP 3709668B2 JP 23711097 A JP23711097 A JP 23711097A JP 23711097 A JP23711097 A JP 23711097A JP 3709668 B2 JP3709668 B2 JP 3709668B2
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JP
Japan
Prior art keywords
conductive layer
contact conductive
gate
field effect
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23711097A
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English (en)
Japanese (ja)
Other versions
JPH1187240A5 (enExample
JPH1187240A (ja
Inventor
洋一 江尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP23711097A priority Critical patent/JP3709668B2/ja
Priority to IDP981183A priority patent/ID20785A/id
Priority to US09/145,431 priority patent/US6278143B1/en
Priority to CNB981188214A priority patent/CN1155103C/zh
Publication of JPH1187240A publication Critical patent/JPH1187240A/ja
Publication of JPH1187240A5 publication Critical patent/JPH1187240A5/ja
Application granted granted Critical
Publication of JP3709668B2 publication Critical patent/JP3709668B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP23711097A 1997-09-02 1997-09-02 半導体装置とその製造方法 Expired - Lifetime JP3709668B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法
IDP981183A ID20785A (id) 1997-09-02 1998-08-31 Alat semi-konduktor serta tata cara pembuatannya
US09/145,431 US6278143B1 (en) 1997-09-02 1998-09-01 Semiconductor device with bipolar and J-FET transistors
CNB981188214A CN1155103C (zh) 1997-09-02 1998-09-02 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JPH1187240A JPH1187240A (ja) 1999-03-30
JPH1187240A5 JPH1187240A5 (enExample) 2004-12-24
JP3709668B2 true JP3709668B2 (ja) 2005-10-26

Family

ID=17010571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23711097A Expired - Lifetime JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法

Country Status (4)

Country Link
US (1) US6278143B1 (enExample)
JP (1) JP3709668B2 (enExample)
CN (1) CN1155103C (enExample)
ID (1) ID20785A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003529937A (ja) * 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
JP5114824B2 (ja) * 2004-10-15 2013-01-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7560755B2 (en) 2006-06-09 2009-07-14 Dsm Solutions, Inc. Self aligned gate JFET structure and method
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US9331097B2 (en) 2014-03-03 2016-05-03 International Business Machines Corporation High speed bipolar junction transistor for high voltage applications
KR101716957B1 (ko) * 2014-07-02 2017-03-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정션 게이트 전계효과 트랜지스터, 반도체 디바이스 및 제조 방법
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
US10218350B2 (en) 2016-07-20 2019-02-26 Semiconductor Components Industries, Llc Circuit with transistors having coupled gates
US9947654B2 (en) 2016-09-08 2018-04-17 Semiconductor Components Industries, Llc Electronic device including a transistor and a field electrode
CN108878513B (zh) * 2017-05-09 2021-09-03 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件
CN114709268B (zh) * 2022-03-25 2025-09-12 上海积塔半导体有限公司 结型场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4600932A (en) * 1984-10-12 1986-07-15 Gte Laboratories Incorporated Enhanced mobility buried channel transistor structure
JPS62289544A (ja) * 1986-06-09 1987-12-16 Daikin Ind Ltd 含フツ素化合物
JPH04291952A (ja) * 1991-03-20 1992-10-16 Sony Corp 半導体装置
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.

Also Published As

Publication number Publication date
CN1155103C (zh) 2004-06-23
JPH1187240A (ja) 1999-03-30
US6278143B1 (en) 2001-08-21
CN1210371A (zh) 1999-03-10
ID20785A (id) 1999-03-04

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