CN1155103C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1155103C
CN1155103C CNB981188214A CN98118821A CN1155103C CN 1155103 C CN1155103 C CN 1155103C CN B981188214 A CNB981188214 A CN B981188214A CN 98118821 A CN98118821 A CN 98118821A CN 1155103 C CN1155103 C CN 1155103C
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CN
China
Prior art keywords
conductive layer
gate
field effect
junction field
effect transistor
Prior art date
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Expired - Lifetime
Application number
CNB981188214A
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English (en)
Chinese (zh)
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CN1210371A (zh
Inventor
����һ
江尻洋一
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN1210371A publication Critical patent/CN1210371A/zh
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Publication of CN1155103C publication Critical patent/CN1155103C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

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  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB981188214A 1997-09-02 1998-09-02 半导体器件及其制造方法 Expired - Lifetime CN1155103C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP237110/97 1997-09-02
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法
JP237110/1997 1997-09-02

Publications (2)

Publication Number Publication Date
CN1210371A CN1210371A (zh) 1999-03-10
CN1155103C true CN1155103C (zh) 2004-06-23

Family

ID=17010571

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981188214A Expired - Lifetime CN1155103C (zh) 1997-09-02 1998-09-02 半导体器件及其制造方法

Country Status (4)

Country Link
US (1) US6278143B1 (enExample)
JP (1) JP3709668B2 (enExample)
CN (1) CN1155103C (enExample)
ID (1) ID20785A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003529937A (ja) * 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
JP5114824B2 (ja) * 2004-10-15 2013-01-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7560755B2 (en) 2006-06-09 2009-07-14 Dsm Solutions, Inc. Self aligned gate JFET structure and method
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US9331097B2 (en) 2014-03-03 2016-05-03 International Business Machines Corporation High speed bipolar junction transistor for high voltage applications
KR101716957B1 (ko) * 2014-07-02 2017-03-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정션 게이트 전계효과 트랜지스터, 반도체 디바이스 및 제조 방법
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
US10218350B2 (en) 2016-07-20 2019-02-26 Semiconductor Components Industries, Llc Circuit with transistors having coupled gates
US9947654B2 (en) 2016-09-08 2018-04-17 Semiconductor Components Industries, Llc Electronic device including a transistor and a field electrode
CN108878513B (zh) * 2017-05-09 2021-09-03 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件
CN114709268B (zh) * 2022-03-25 2025-09-12 上海积塔半导体有限公司 结型场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4600932A (en) * 1984-10-12 1986-07-15 Gte Laboratories Incorporated Enhanced mobility buried channel transistor structure
JPS62289544A (ja) * 1986-06-09 1987-12-16 Daikin Ind Ltd 含フツ素化合物
JPH04291952A (ja) * 1991-03-20 1992-10-16 Sony Corp 半導体装置
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.

Also Published As

Publication number Publication date
JP3709668B2 (ja) 2005-10-26
JPH1187240A (ja) 1999-03-30
US6278143B1 (en) 2001-08-21
CN1210371A (zh) 1999-03-10
ID20785A (id) 1999-03-04

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Granted publication date: 20040623