ID20785A - Alat semi-konduktor serta tata cara pembuatannya - Google Patents

Alat semi-konduktor serta tata cara pembuatannya

Info

Publication number
ID20785A
ID20785A IDP981183A ID981183A ID20785A ID 20785 A ID20785 A ID 20785A ID P981183 A IDP981183 A ID P981183A ID 981183 A ID981183 A ID 981183A ID 20785 A ID20785 A ID 20785A
Authority
ID
Indonesia
Prior art keywords
procedures
semi
making
conductor tools
tools
Prior art date
Application number
IDP981183A
Other languages
English (en)
Indonesian (id)
Inventor
Hirokazu Ejiri
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ID20785A publication Critical patent/ID20785A/id

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
IDP981183A 1997-09-02 1998-08-31 Alat semi-konduktor serta tata cara pembuatannya ID20785A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法

Publications (1)

Publication Number Publication Date
ID20785A true ID20785A (id) 1999-03-04

Family

ID=17010571

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP981183A ID20785A (id) 1997-09-02 1998-08-31 Alat semi-konduktor serta tata cara pembuatannya

Country Status (4)

Country Link
US (1) US6278143B1 (enExample)
JP (1) JP3709668B2 (enExample)
CN (1) CN1155103C (enExample)
ID (1) ID20785A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003529937A (ja) * 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
JP5114824B2 (ja) * 2004-10-15 2013-01-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7560755B2 (en) 2006-06-09 2009-07-14 Dsm Solutions, Inc. Self aligned gate JFET structure and method
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US9331097B2 (en) 2014-03-03 2016-05-03 International Business Machines Corporation High speed bipolar junction transistor for high voltage applications
KR101716957B1 (ko) * 2014-07-02 2017-03-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정션 게이트 전계효과 트랜지스터, 반도체 디바이스 및 제조 방법
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
US10218350B2 (en) 2016-07-20 2019-02-26 Semiconductor Components Industries, Llc Circuit with transistors having coupled gates
US9947654B2 (en) 2016-09-08 2018-04-17 Semiconductor Components Industries, Llc Electronic device including a transistor and a field electrode
CN108878513B (zh) * 2017-05-09 2021-09-03 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件
CN114709268B (zh) * 2022-03-25 2025-09-12 上海积塔半导体有限公司 结型场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4600932A (en) * 1984-10-12 1986-07-15 Gte Laboratories Incorporated Enhanced mobility buried channel transistor structure
JPS62289544A (ja) * 1986-06-09 1987-12-16 Daikin Ind Ltd 含フツ素化合物
JPH04291952A (ja) * 1991-03-20 1992-10-16 Sony Corp 半導体装置
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.

Also Published As

Publication number Publication date
JP3709668B2 (ja) 2005-10-26
CN1155103C (zh) 2004-06-23
JPH1187240A (ja) 1999-03-30
US6278143B1 (en) 2001-08-21
CN1210371A (zh) 1999-03-10

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