JPH1187240A5 - - Google Patents

Info

Publication number
JPH1187240A5
JPH1187240A5 JP1997237110A JP23711097A JPH1187240A5 JP H1187240 A5 JPH1187240 A5 JP H1187240A5 JP 1997237110 A JP1997237110 A JP 1997237110A JP 23711097 A JP23711097 A JP 23711097A JP H1187240 A5 JPH1187240 A5 JP H1187240A5
Authority
JP
Japan
Prior art keywords
conductive layer
contact conductive
junction field
effect transistor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997237110A
Other languages
English (en)
Japanese (ja)
Other versions
JP3709668B2 (ja
JPH1187240A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP23711097A priority Critical patent/JP3709668B2/ja
Priority claimed from JP23711097A external-priority patent/JP3709668B2/ja
Priority to IDP981183A priority patent/ID20785A/id
Priority to US09/145,431 priority patent/US6278143B1/en
Priority to CNB981188214A priority patent/CN1155103C/zh
Publication of JPH1187240A publication Critical patent/JPH1187240A/ja
Publication of JPH1187240A5 publication Critical patent/JPH1187240A5/ja
Application granted granted Critical
Publication of JP3709668B2 publication Critical patent/JP3709668B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP23711097A 1997-09-02 1997-09-02 半導体装置とその製造方法 Expired - Lifetime JP3709668B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法
IDP981183A ID20785A (id) 1997-09-02 1998-08-31 Alat semi-konduktor serta tata cara pembuatannya
US09/145,431 US6278143B1 (en) 1997-09-02 1998-09-01 Semiconductor device with bipolar and J-FET transistors
CNB981188214A CN1155103C (zh) 1997-09-02 1998-09-02 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23711097A JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法

Publications (3)

Publication Number Publication Date
JPH1187240A JPH1187240A (ja) 1999-03-30
JPH1187240A5 true JPH1187240A5 (enExample) 2004-12-24
JP3709668B2 JP3709668B2 (ja) 2005-10-26

Family

ID=17010571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23711097A Expired - Lifetime JP3709668B2 (ja) 1997-09-02 1997-09-02 半導体装置とその製造方法

Country Status (4)

Country Link
US (1) US6278143B1 (enExample)
JP (1) JP3709668B2 (enExample)
CN (1) CN1155103C (enExample)
ID (1) ID20785A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003529937A (ja) * 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
JP5114824B2 (ja) * 2004-10-15 2013-01-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7560755B2 (en) 2006-06-09 2009-07-14 Dsm Solutions, Inc. Self aligned gate JFET structure and method
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
AU2010262789A1 (en) * 2009-06-19 2012-02-02 Power Integrations, Inc. Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US9331097B2 (en) 2014-03-03 2016-05-03 International Business Machines Corporation High speed bipolar junction transistor for high voltage applications
KR101716957B1 (ko) * 2014-07-02 2017-03-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정션 게이트 전계효과 트랜지스터, 반도체 디바이스 및 제조 방법
US9935628B2 (en) * 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
US10218350B2 (en) 2016-07-20 2019-02-26 Semiconductor Components Industries, Llc Circuit with transistors having coupled gates
US9947654B2 (en) 2016-09-08 2018-04-17 Semiconductor Components Industries, Llc Electronic device including a transistor and a field electrode
CN108878513B (zh) * 2017-05-09 2021-09-03 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件
CN114709268B (zh) * 2022-03-25 2025-09-12 上海积塔半导体有限公司 结型场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4600932A (en) * 1984-10-12 1986-07-15 Gte Laboratories Incorporated Enhanced mobility buried channel transistor structure
JPS62289544A (ja) * 1986-06-09 1987-12-16 Daikin Ind Ltd 含フツ素化合物
JPH04291952A (ja) * 1991-03-20 1992-10-16 Sony Corp 半導体装置
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.

Similar Documents

Publication Publication Date Title
US6392275B1 (en) Semiconductor device with DMOS, BJT and CMOS structures
US5930642A (en) Transistor with buried insulative layer beneath the channel region
US5185280A (en) Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US20020182813A1 (en) Graded LDD implant process for sub-half-micron MOS devices
JPH1187240A5 (enExample)
US5895766A (en) Method of forming a field effect transistor
US5244823A (en) Process for fabricating a semiconductor device
JPH0620132B2 (ja) 電界効果トランジスタ
US6146934A (en) Semiconductor device with asymmetric PMOS source/drain implant and method of manufacture thereof
JPS61156882A (ja) 二重拡散形絶縁ゲ−ト電界効果トランジスタ及びその製造方法
US6963109B2 (en) Semiconductor device and method for manufacturing the same
CN1155103C (zh) 半导体器件及其制造方法
JP3307112B2 (ja) 半導体装置の製造方法
JPH1197709A (ja) Ｍｏｓトランジスタおよびその製造方法
JPS58147074A (ja) 金属酸化物半導体トランジスタデバイス及びその製法
US5291049A (en) Mosfet with buried element isolation regions
US6576521B1 (en) Method of forming semiconductor device with LDD structure
US5877058A (en) Method of forming an insulated-gate field-effect transistor with metal spacers
US7119435B2 (en) Semiconductor device with source/drain extension layer
KR100518506B1 (ko) 트랜치 게이트형 전력용 모스 소자 및 그 제조방법
RU96109062A (ru) Бикмоп-прибор и способ его изготовления
JP3192857B2 (ja) 縦型ｍｏｓ半導体装置及びその製造方法
JPH11121757A (ja) 半導体装置およびその製造方法
JP2004063918A (ja) 横型ｍｏｓトランジスタ
JPS63227059A (ja) 半導体装置およびその製造方法