JP3675603B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3675603B2
JP3675603B2 JP08586897A JP8586897A JP3675603B2 JP 3675603 B2 JP3675603 B2 JP 3675603B2 JP 08586897 A JP08586897 A JP 08586897A JP 8586897 A JP8586897 A JP 8586897A JP 3675603 B2 JP3675603 B2 JP 3675603B2
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Japan
Prior art keywords
tab
inner lead
electrode pad
large current
semiconductor pellet
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Expired - Fee Related
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JP08586897A
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English (en)
Japanese (ja)
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JPH10261756A (ja
JPH10261756A5 (enExample
Inventor
直樹 藤田
佐藤　　賢一
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP08586897A priority Critical patent/JP3675603B2/ja
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Publication of JPH10261756A5 publication Critical patent/JPH10261756A5/ja
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Publication of JP3675603B2 publication Critical patent/JP3675603B2/ja
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP08586897A 1997-03-19 1997-03-19 半導体装置 Expired - Fee Related JP3675603B2 (ja)

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Publication number Priority date Publication date Assignee Title
US6396127B1 (en) 1998-09-25 2002-05-28 International Rectifier Corporation Semiconductor package
JP3563387B2 (ja) * 2001-01-23 2004-09-08 Ｎｅｃエレクトロニクス株式会社 半導体装置用導電性硬化樹脂及び半導体装置
JP4112816B2 (ja) * 2001-04-18 2008-07-02 株式会社東芝 半導体装置および半導体装置の製造方法
JP4801278B2 (ja) 2001-04-23 2011-10-26 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4248953B2 (ja) 2003-06-30 2009-04-02 株式会社ルネサステクノロジ 半導体装置およびその製造方法
WO2006065007A1 (en) * 2004-12-16 2006-06-22 Seoul Semiconductor Co., Ltd. Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method
US7375424B2 (en) * 2005-05-03 2008-05-20 International Rectifier Corporation Wirebonded device packages for semiconductor devices having elongated electrodes
JP2007067342A (ja) * 2005-09-02 2007-03-15 Ultrasonic Engineering Co Ltd ワイヤボンディング方法およびワイヤボンディング装置
JP5151537B2 (ja) * 2008-02-20 2013-02-27 三菱電機株式会社 パワー半導体素子
JP2012190936A (ja) * 2011-03-09 2012-10-04 Sharp Corp 半導体装置のデバイス実装構造
CN103828041B (zh) * 2011-09-29 2016-07-06 夏普株式会社 半导体装置
JP5448110B2 (ja) * 2012-03-12 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置
JP5387715B2 (ja) * 2012-04-06 2014-01-15 住友電気工業株式会社 半導体デバイス
JP2013222781A (ja) * 2012-04-16 2013-10-28 Sharp Corp 半導体装置のデバイス実装構造
WO2015076257A1 (ja) 2013-11-20 2015-05-28 ローム株式会社 スイッチングデバイスおよび電子回路
JP2015019115A (ja) * 2014-10-28 2015-01-29 ルネサスエレクトロニクス株式会社 半導体装置
JP2016040839A (ja) * 2015-10-27 2016-03-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102019128394A1 (de) * 2019-10-21 2021-04-22 Infineon Technologies Ag Halbleiter-die, halbleitervorrichtung und igbt-modul

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