JP3663261B2 - 表示装置用アレイ基板及びその製造方法 - Google Patents

表示装置用アレイ基板及びその製造方法 Download PDF

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Publication number
JP3663261B2
JP3663261B2 JP26057296A JP26057296A JP3663261B2 JP 3663261 B2 JP3663261 B2 JP 3663261B2 JP 26057296 A JP26057296 A JP 26057296A JP 26057296 A JP26057296 A JP 26057296A JP 3663261 B2 JP3663261 B2 JP 3663261B2
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Japan
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line
signal line
film
pixel electrode
insulating film
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Expired - Lifetime
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JP26057296A
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English (en)
Japanese (ja)
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JPH09160076A (ja
JPH09160076A5 (cg-RX-API-DMAC7.html
Inventor
政幸 堂城
民雄 中井
明 久保
一成 森
英郎 川野
誠 渋沢
哲也 飯塚
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Toshiba Corp
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Toshiba Corp
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Priority to JP26057296A priority Critical patent/JP3663261B2/ja
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Publication of JP3663261B2 publication Critical patent/JP3663261B2/ja
Publication of JPH09160076A5 publication Critical patent/JPH09160076A5/ja
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  • Thin Film Transistor (AREA)
JP26057296A 1995-10-05 1996-10-01 表示装置用アレイ基板及びその製造方法 Expired - Lifetime JP3663261B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26057296A JP3663261B2 (ja) 1995-10-05 1996-10-01 表示装置用アレイ基板及びその製造方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP7-258629 1995-10-05
JP25862995 1995-10-05
JP25861995 1995-10-05
JP25861595 1995-10-05
JP7-258619 1995-10-05
JP7-258615 1995-10-05
JP26057296A JP3663261B2 (ja) 1995-10-05 1996-10-01 表示装置用アレイ基板及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004356839A Division JP3998681B2 (ja) 1995-10-05 2004-12-09 表示装置用アレイ基板及びその製造方法
JP2005024048A Division JP4095990B2 (ja) 1995-10-05 2005-01-31 表示装置用アレイ基板及びその製造方法

Publications (3)

Publication Number Publication Date
JPH09160076A JPH09160076A (ja) 1997-06-20
JP3663261B2 true JP3663261B2 (ja) 2005-06-22
JPH09160076A5 JPH09160076A5 (cg-RX-API-DMAC7.html) 2005-07-28

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JP26057296A Expired - Lifetime JP3663261B2 (ja) 1995-10-05 1996-10-01 表示装置用アレイ基板及びその製造方法

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JP (1) JP3663261B2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235458A (zh) * 2013-04-27 2013-08-07 南京中电熊猫液晶显示科技有限公司 Tft-lcd阵列基板及其制造方法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH1184426A (ja) * 1997-09-12 1999-03-26 Semiconductor Energy Lab Co Ltd イメージセンサを内蔵した液晶表示装置
JP3907804B2 (ja) 1997-10-06 2007-04-18 株式会社半導体エネルギー研究所 液晶表示装置
KR100276442B1 (ko) * 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
JPH11258632A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板
JPH11258633A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板の製造方法
KR100280889B1 (ko) * 1998-06-30 2001-02-01 구본준, 론 위라하디락사 액정 표시 장치의 패드부 제조 방법 및 그 방법에 의한 액정 표시 장치
JP4017754B2 (ja) * 1998-07-07 2007-12-05 シャープ株式会社 液晶表示装置およびその製造方法
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4777500B2 (ja) * 2000-06-19 2011-09-21 三菱電機株式会社 アレイ基板およびそれを用いた表示装置ならびにアレイ基板の製造方法
JP2002341383A (ja) * 2001-05-21 2002-11-27 Matsushita Electric Ind Co Ltd アクティブマトリクス液晶表示装置
TW594156B (en) 2002-01-04 2004-06-21 Fujitsu Display Tech Substrate for display device and display device equipped therewith
US7309922B2 (en) 2003-10-20 2007-12-18 Samsun Electronics Co., Ltd. Lower substrate, display apparatus having the same and method of manufacturing the same
KR100987713B1 (ko) * 2003-11-03 2010-10-13 삼성전자주식회사 하부기판, 이를 갖는 표시장치 및 이의 제조방법
KR100987723B1 (ko) * 2003-11-06 2010-10-13 삼성전자주식회사 하부기판의 제조방법
KR100987714B1 (ko) * 2003-10-20 2010-10-13 삼성전자주식회사 하부기판, 이를 갖는 표시장치 및 이의 제조방법
KR101006438B1 (ko) * 2003-11-12 2011-01-06 삼성전자주식회사 액정 표시 장치
JP4462981B2 (ja) 2004-03-29 2010-05-12 Ｎｅｃ液晶テクノロジー株式会社 アクティブマトリクス基板及び該基板を備える液晶表示装置
KR100731733B1 (ko) * 2004-11-24 2007-06-22 삼성에스디아이 주식회사 액정표시장치 및 그 제조방법
JP4188980B2 (ja) * 2006-05-17 2008-12-03 三菱電機株式会社 液晶表示装置およびその製造方法
JP2006227649A (ja) * 2006-05-17 2006-08-31 Advanced Display Inc 液晶表示装置およびその製造方法
JP2007027773A (ja) * 2006-08-28 2007-02-01 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
CN102160184B (zh) * 2008-09-19 2014-07-09 株式会社半导体能源研究所 显示装置
KR101920196B1 (ko) * 2008-09-19 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
EP2180518B1 (en) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2009111412A (ja) * 2008-11-28 2009-05-21 Sakae Tanaka 薄膜トランジスタ素子と表示装置
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
KR101740943B1 (ko) 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5604087B2 (ja) * 2009-11-27 2014-10-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011114404A1 (ja) * 2010-03-19 2011-09-22 シャープ株式会社 アクティブマトリクス基板
JP5638403B2 (ja) * 2011-01-26 2014-12-10 株式会社ジャパンディスプレイ 表示装置
US9293480B2 (en) * 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6518117B2 (ja) * 2015-04-20 2019-05-22 株式会社ジャパンディスプレイ 表示装置
WO2023115553A1 (en) * 2021-12-24 2023-06-29 Boe Technology Group Co., Ltd. Array substrate and display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235458A (zh) * 2013-04-27 2013-08-07 南京中电熊猫液晶显示科技有限公司 Tft-lcd阵列基板及其制造方法
CN103235458B (zh) * 2013-04-27 2015-10-21 南京中电熊猫液晶显示科技有限公司 Tft-lcd阵列基板及其制造方法

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Publication number Publication date
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