JP3646784B2 - 薄膜パタ−ンの製造方法および微細構造体 - Google Patents

薄膜パタ−ンの製造方法および微細構造体 Download PDF

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Publication number
JP3646784B2
JP3646784B2 JP2000099930A JP2000099930A JP3646784B2 JP 3646784 B2 JP3646784 B2 JP 3646784B2 JP 2000099930 A JP2000099930 A JP 2000099930A JP 2000099930 A JP2000099930 A JP 2000099930A JP 3646784 B2 JP3646784 B2 JP 3646784B2
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Japan
Prior art keywords
organic molecular
thin film
thiol
pattern
coupling agent
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Expired - Lifetime
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JP2000099930A
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English (en)
Japanese (ja)
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JP2001284798A (ja
JP2001284798A5 (https=
Inventor
関　　俊一
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2000099930A priority Critical patent/JP3646784B2/ja
Priority to US09/820,758 priority patent/US6624071B2/en
Publication of JP2001284798A publication Critical patent/JP2001284798A/ja
Priority to US10/425,622 priority patent/US6677238B2/en
Publication of JP2001284798A5 publication Critical patent/JP2001284798A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ink Jet (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Chemically Coating (AREA)
JP2000099930A 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体 Expired - Lifetime JP3646784B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000099930A JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体
US09/820,758 US6624071B2 (en) 2000-03-31 2001-03-30 Systems and method for fabrication of a thin film pattern
US10/425,622 US6677238B2 (en) 2000-03-31 2003-04-30 System and methods for fabrication of a thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000099930A JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体

Publications (3)

Publication Number Publication Date
JP2001284798A JP2001284798A (ja) 2001-10-12
JP2001284798A5 JP2001284798A5 (https=) 2005-03-03
JP3646784B2 true JP3646784B2 (ja) 2005-05-11

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JP2000099930A Expired - Lifetime JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体

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US (2) US6624071B2 (https=)
JP (1) JP3646784B2 (https=)

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JP4498132B2 (ja) * 2002-06-28 2010-07-07 キヤノン株式会社 プローブアレイの製造方法
KR20060012545A (ko) * 2002-07-03 2006-02-08 나노파우더스 인더스트리어스 리미티드. 저온 소결처리한 전도성 나노 잉크 및 이것의 제조 방법
JP2004311957A (ja) * 2003-03-26 2004-11-04 Seiko Epson Corp デバイスとその製造方法及び電気光学装置並びに電子機器
US7180308B2 (en) * 2003-04-02 2007-02-20 E. I. Du Pont De Nemours And Company Screening for electrical conductivity of molecules by measuring surface potential
JP2004321880A (ja) 2003-04-22 2004-11-18 Seiko Epson Corp 洗浄方法及び保管方法、パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
JP4572868B2 (ja) * 2003-05-12 2010-11-04 セイコーエプソン株式会社 配線パターン形成方法、非接触型カード媒体の製造方法、電気光学装置の製造方法及びアクティブマトリクス基板の製造方法
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
WO2005041280A1 (en) * 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2005268202A (ja) * 2004-02-16 2005-09-29 Seiko Epson Corp 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、及び電子機器
JP4956736B2 (ja) * 2004-02-19 2012-06-20 独立行政法人産業技術総合研究所 単分子膜形成方法
JP4281584B2 (ja) * 2004-03-04 2009-06-17 セイコーエプソン株式会社 半導体装置の製造方法
US7547978B2 (en) * 2004-06-14 2009-06-16 Micron Technology, Inc. Underfill and encapsulation of semiconductor assemblies with materials having differing properties
US7235431B2 (en) 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
US7749881B2 (en) * 2005-05-18 2010-07-06 Intermolecular, Inc. Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US20060093732A1 (en) * 2004-10-29 2006-05-04 David Schut Ink-jet printing of coupling agents for trace or circuit deposition templating
US20060135028A1 (en) * 2004-12-07 2006-06-22 Andreas Klyszcz Substrate for a display and method for manufacturing the same
JP4096941B2 (ja) * 2004-12-10 2008-06-04 セイコーエプソン株式会社 電気配線の形成方法、配線基板の製造方法、電気光学素子の製造方法、電子機器の製造方法、配線基板、電気光学素子、および電子機器
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
WO2007025565A1 (en) * 2005-09-01 2007-03-08 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP2007281416A (ja) * 2006-03-17 2007-10-25 Seiko Epson Corp 金属配線形成方法及びアクティブマトリクス基板の製造方法
MX2007015979A (es) * 2006-03-31 2009-04-07 Nielsen Media Res Inc Metodos, sistemas y aparato para medicion de multiples fines.
US7790631B2 (en) * 2006-11-21 2010-09-07 Intel Corporation Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
US8120114B2 (en) * 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
US7923298B2 (en) * 2007-09-07 2011-04-12 Micron Technology, Inc. Imager die package and methods of packaging an imager die on a temporary carrier
JP5371247B2 (ja) * 2008-01-06 2013-12-18 Ｄｏｗａエレクトロニクス株式会社 銀塗料およびその製造法
JP5394005B2 (ja) * 2008-05-23 2014-01-22 株式会社ミマキエンジニアリング 無機物のエッチング方法
WO2010029635A1 (ja) * 2008-09-11 2010-03-18 パイオニア株式会社 金属配線の形成方法、及び金属配線を備えた電子部品
JP6197306B2 (ja) * 2013-02-22 2017-09-20 凸版印刷株式会社 薄膜トランジスタの製造方法
US8916469B2 (en) * 2013-03-12 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating copper damascene
JP2019513183A (ja) 2016-02-16 2019-05-23 アリゾナ・ボード・オブ・リージェンツ・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティーＡｒｉｚｏｎａ Ｂｏａｒｄ ｏｆ Ｒｅｇｅｎｔｓ ｏｎ ｂｅｈａｌｆ ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ 様々な材料の溶解性サポートを用いる３ｄプリンティングを使用する金属製またはセラミックス製部品の製作
US11504770B2 (en) 2016-07-15 2022-11-22 Arizona Board Of Regents On Behalf Of Arizona State University Dissolving metal supports in 3D printed metals and ceramics using sensitization
US10286713B2 (en) * 2016-10-11 2019-05-14 Arizona Board Of Regents On Behalf Of Arizona State University Printing using reactive inks and conductive adhesion promoters
US20180332712A1 (en) * 2017-05-11 2018-11-15 Carpe Diem Technologies, Inc. High-resolution printing technique
WO2018213640A1 (en) 2017-05-17 2018-11-22 Mariana Bertoni Systems and methods for controlling the morphology and porosity of printed reactive inks for high precision printing

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GB9418289D0 (en) 1994-09-10 1994-10-26 Univ Liverpool Solutions or dispersions and a method of synthesising materials having controlled electronic and optical properties therefrom
US5776254A (en) * 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
JP3417751B2 (ja) * 1995-02-13 2003-06-16 株式会社東芝 半導体装置の製造方法
JPH08309918A (ja) 1995-05-22 1996-11-26 Nippon Denkai Kk 銅張積層板とそれを用いたプリント回路板およびこれらの製法
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US6413587B1 (en) * 1999-03-02 2002-07-02 International Business Machines Corporation Method for forming polymer brush pattern on a substrate surface
JP2000349078A (ja) * 1999-06-03 2000-12-15 Mitsubishi Electric Corp 化学気相成長装置および半導体装置の製造方法
JP3503546B2 (ja) * 1999-11-01 2004-03-08 信越化学工業株式会社 金属パターンの形成方法

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Publication number Publication date
US20030199162A1 (en) 2003-10-23
US6624071B2 (en) 2003-09-23
JP2001284798A (ja) 2001-10-12
US20020168807A1 (en) 2002-11-14
US6677238B2 (en) 2004-01-13

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