JP4654627B2 - 化学吸着膜の形成方法、及び化学吸着膜 - Google Patents
化学吸着膜の形成方法、及び化学吸着膜 Download PDFInfo
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- JP4654627B2 JP4654627B2 JP2004217069A JP2004217069A JP4654627B2 JP 4654627 B2 JP4654627 B2 JP 4654627B2 JP 2004217069 A JP2004217069 A JP 2004217069A JP 2004217069 A JP2004217069 A JP 2004217069A JP 4654627 B2 JP4654627 B2 JP 4654627B2
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- VBSUMMHIJNZMRM-UHFFFAOYSA-N triethoxy(2-phenylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC1=CC=CC=C1 VBSUMMHIJNZMRM-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- GWLYXRJHEZXQRX-UHFFFAOYSA-N triethoxy(furan-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1=CC=CO1 GWLYXRJHEZXQRX-UHFFFAOYSA-N 0.000 description 1
- OYGYKEULCAINCL-UHFFFAOYSA-N triethoxy(hexadecyl)silane Chemical compound CCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC OYGYKEULCAINCL-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- PADYPAQRESYCQZ-UHFFFAOYSA-N triethoxy-(4-methylphenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(C)C=C1 PADYPAQRESYCQZ-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- XVZMLSWFBPLMEA-UHFFFAOYSA-N trimethoxy(2-pyridin-2-ylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=N1 XVZMLSWFBPLMEA-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- YJDOIAGBSYPPCK-UHFFFAOYSA-N trimethoxy(3-morpholin-4-ylpropyl)silane Chemical compound CO[Si](OC)(OC)CCCN1CCOCC1 YJDOIAGBSYPPCK-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- XQEGZYAXBCFSBS-UHFFFAOYSA-N trimethoxy-(4-methylphenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=C(C)C=C1 XQEGZYAXBCFSBS-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- MAFQBSQRZKWGGE-UHFFFAOYSA-N trimethoxy-[2-[4-(2-trimethoxysilylethyl)phenyl]ethyl]silane Chemical compound CO[Si](OC)(OC)CCC1=CC=C(CC[Si](OC)(OC)OC)C=C1 MAFQBSQRZKWGGE-UHFFFAOYSA-N 0.000 description 1
- ZLWHDIWECSMOEJ-UHFFFAOYSA-N trimethoxy-[3-(1h-pyrrol-2-yl)propyl]silane Chemical compound CO[Si](OC)(OC)CCCC1=CC=CN1 ZLWHDIWECSMOEJ-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- FYZFRYWTMMVDLR-UHFFFAOYSA-M trimethyl(3-trimethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CO[Si](OC)(OC)CCC[N+](C)(C)C FYZFRYWTMMVDLR-UHFFFAOYSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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Description
そして最近では、化学吸着膜をパターニングすることで基材表面に異なる表面特性を呈する複数の領域を形成し、デバイス製造に利用することが提案されている(例えば特許文献1参照。)。
しかしながら、上述した液相法、気相法のいずれの方法であっても、化学吸着膜の形成に多くの時間を要し、さらに基材表面の前処理(親水処理)が不十分であると化学吸着膜にムラが生じるという問題がある。また、シランカップリング剤の分子が巨大なものであると、基材表面との反応性が乏しいためにより多くの時間を要し、成膜がさらに困難になる。
このように化学吸着剤を基材表面へ付着させるに先立って、同表面に酸または塩基を付着させる方法とすれば、化学吸着剤と基材表面との結合を促進し、短時間のうちに効率的に基材表面に強固に結合した化学吸着膜を形成することができる。
本発明によれば、上記いずれの成膜方法に適用した場合にも、化学吸着剤を効率よく短時間に基材表面に結合させることができる。
前記X基は、加水分解性を有するハロゲン基(Cl,Br,F,I等)やアルコキシ基等であり、具体的にはクロロシリル基(−SiCl)、クロロチタニル基(−TiCl)、クロロスタニル基(−SnCl)、メトキシシリル基(−SiOCH3)、エトキシシリル基(−SiOCH2CH3)、メトキシチタニル基(−TiOCH3)、エトキシチタニル基(−TiOCH2CH3)、メトキシスタニル基(−SnOCH3)、エトキシスタニル基(−TiOCH2CH3)等である。係る分子構造を具備した化学吸着剤を用いることで、加水分解反応を経て基材表面に強固に結合した化学吸着膜を得ることができ、特に化学吸着膜によって撥水性、撥油性、親水性、新油性、密着性、防曇性、防汚性、耐久性等の各種の表面特性を付与するうえで好ましい。
図1は、基材表面に被覆形成した本発明に係る化学吸着膜を示す断面構成図であり、図2は、本実施形態の化学吸着膜の形成方法を示すフロー図である。
図1に示すように、化学吸着膜15は、基材10の表面に付着された酸または塩基からなる反応助剤12を介して基材表面に被覆形成されている。そして、係る化学吸着膜15の形成方法は、図2に示すように、基材10表面を親水化する親水処理工程ST1と、基材10表面に酸または塩基からなる反応助剤12を付着させる処理工程ST2と、反応助剤12を塗布された基材10上に化学吸着剤を付着させて化学吸着膜15を形成する成膜工程ST3とを含んでいる。
例えばシリル基を含むものとしては、シラノール基(−Si(OH)3)、トリクロロシリル基(−SiCl3)、トリエトキシシリル基(−Si(OCH2CH3)3)、トリメトキシシリル基(−Si(OCH3)3)等を挙げることができる。
3−フェノキシプロピルトリクロロシラン、t−ブチルフェニルクロロシラン、t−ブチルフェニルメトキシシラン、t−ブチルフェニルジクロロシラン、p−(t−ブチル)フェネチルジメチルクロロシラン、p−(t−ブチル)フェネチルトリクロロシラン、1,3−(クロロジメチルシリルメチル)ヘプタコサン、((クロロメチル)フェニルエチル)ジメチルクロロシラン、((クロロメチル)フェニルエチル)メチルジクロロシラン、((クロロメチル)フェニルエチル)トリクロロシラン、((クロロメチル)フェニルエチル)トリメトキシシラン、クロロフェニルトリクロロシラン、2−シアノエチルトリクロロシラン、2−シアノエチルメチルジクロロシラン、3−シアノプロピルメチルジエトキシシラン、3−シアノプロピルメチルジクロロシラン、3−シアノプロピルメチルジクロロシラン、3−シアノプロピルジメチルエトキシシラン、3−シアノプロピルメチルジクロロシラン、3−シアノプロピルトリクロロシラン等、及び後述のフッ化アルキルシランを挙げることができる。これらの1種又は2種以上の混合物を用いることができる。
一方、塩基としては、水酸化ナトリウム、水酸化カリウム、水酸化カルシウム等を例示することができる。好ましくは水酸化ナトリウム、水酸化カリウムである。
また本発明では、化学吸着剤の供給に先立って基材側に酸または塩基を付着させるようになっているので、化学吸着剤を劣化させることなく有効に用いることができる。つまり、成膜工程ST3で用いる化学吸着剤の溶液等に酸または塩基を含有させると、酸または塩基の存在によって化学吸着剤の加水分解反応が進行し、基材10に付着できる化学吸着剤量が減少して処理時間が長くなる。またこれにより化学吸着剤の使用効率が低下し、コスト上昇を招くおそれがあるが、本発明ではこれらのような問題が生じることはない。
化学吸着剤としてヘプタデカフルオロ−1,1,2,2−テトラヒドロトリメトキシシラン(以後FAS−17と称する。)を用意し、基材としてスライドガラス基板を用意した。
次いで、スライドガラス基板の表面に紫外線(波長172nm)を照射して洗浄し、基板表面の有機不純物を除去するとともに、基板表面にシラノール基(Si−OH)を形成して当該表面の親水化を行った。
次に、親水化したスライドガラス基板に、10wt%の塩酸水溶液をスピンコート法を用いて塗布した。塗布条件は基板回転数が2000rpm、塗布時間が1分間である。
次に、ポリ4フッ化エチレン製の密閉可能な容器に、10mlサンプルビンに上記FAS−17を2μl入れたものと、親水処理後のスライドガラス基板とを収容して密閉し、この容器を120℃に加熱した電気炉内に静置した。
また、以上の手順に準じて、電気炉による加熱時間を変えて複数のサンプルを作製した。
化学吸着剤としてオクタデシルトリエトキシシラン(以後ODSと称する。)を用意し、基材として石英ガラス基板を用意した。
次いで、石英ガラス基板の表面を、オゾン洗浄機を用いて洗浄した。オゾン洗浄機は、紫外線(波長254nmと波長185nmのもの)を照射して空気中でオゾンを発生させ、オゾンの活性を利用して対象物の洗浄を行う(基板表面の有機不純物を除去する)装置である。なお、このオゾン洗浄により、石英ガラス基板表面にシラノール基(Si−OH)が形成され親水化される。
次に、親水化した石英ガラス基板を35wt%の塩酸水溶液に10秒間浸漬した。次いで取り出した石英ガラス基板にドライエアー(乾燥空気)を吹きかけて乾燥した。
次に、上記石英ガラス基板を1wt%のODS/トルエン溶液に浸漬し、静置することで、石英ガラス基板上にODSからなる化学吸着膜を形成した。
また、以上の手順に準じて、ODS/トルエン溶液への浸漬時間を変えて複数のサンプルを作製した。
以上の工程により得られた各サンプルにつき、実施例1と同様の方法で静的接触角を測定した。その結果、塩酸水溶液に浸漬する工程を行ったサンプルは、同工程を省略したサンプルに比して、ODS/トルエン溶液への浸漬時間が同一であっても大きな静的接触角を得られることが確認された。このように、化学吸着膜の形成に先立って酸処理を行うならば、基板表面への化学吸着剤の付着性が著しく改善され、化学吸着膜を短時間に効率よく形成することが可能である。
化学吸着剤としてフェニルトリメトキシシラン(以後PTSと称する。)を用意し、基材としてPET(ポリエチレンテレフタレート)フィルムを用意した。
次いで、PETフィルムの表面を、酸素プラズマ処理により洗浄してフィルム表面の有機不純物を除去するとともに、基板表面にヒドロキシル基(−OH)ないしカルボキシル基(−COOH)を形成して当該表面の親水化を行った。
次に、親水化したPETフィルムに、5wt%の水酸化ナトリウム水溶液をスプレーコート法を用いて塗布した。
次に、ポリ4フッ化エチレン製の密閉可能な容器に、10mlサンプルビンに上記PTSを2μl入れたものと、親水処理後のPETフィルムとを収容して密閉し、この容器を100℃に加熱した電気炉内に静置した。
また、以上の手順に準じて、電気炉による加熱時間を変えて複数のサンプルを作製した。
次に、先の実施形態の化学吸着膜の形成方法を含むデバイス製造方法の実施例について説明する。以下、デバイス製造方法の一例として、液相法を用いた配線パターンの形成方法を挙げて説明する。
図6は、上記実施形態の形成方法で得られる化学吸着膜を利用した薄膜パターンの形成方法を示す断面工程図である。本実施例では、配線パターン形成用材料を基材10上に配置するに際して、配線パターン形成用材料を含む機能液の液滴を吐出する液滴吐出法(インクジェット法)を用いる。液滴吐出法では、吐出ヘッドを基材10に対向配置し、所定の領域に対して配線パターン形成用材料を含む機能液の液滴を吐出ヘッドから吐出して配置する。
まず、図6(a)に示すように、基材10の表面に化学吸着膜15を形成する。この化学吸着膜15は、先に記載の本発明に係る形成方法を用い、工程ST1〜ST3を経て形成されたものである。また本実施例では、化学吸着膜15によって基材10の表面に撥液性が付与されているものとする。したがって化学吸着膜15は、例えばフッ化アルキルシランからなる自己組織化である。
この除去工程により、基材10の表面に、後段の工程で塗布される液体材料に対して撥液性を有する撥液領域(化学吸着膜15の形成領域)と、親液性を有する親液領域(化学吸着膜15が除去された領域)15dとが形成される。
この材料配置工程では、図7に示したように、吐出ヘッド20から配線パターン形成用材料を含む液体材料を液滴にして吐出する。吐出された液滴は、図6(d)に示すように、基材10上の親液領域15dに配置される。このとき、親液領域15dの周囲は、撥液性を有する化学吸着膜15により囲まれているので、液滴が親液領域15d以外の領域にまで濡れ広がるのを阻止できる。また、化学吸着膜15の撥液性により、吐出された液滴の一部が化学吸着膜15上に乗っても親液領域15dに流れ落ちるようになる。更に、基材10が露出している親液領域15dでは、その親液性により、吐出された液滴が親液領域15d内を円滑に濡れ広がり、その結果同領域に均一に配置される。
また先に記載のように、本発明によれば化学吸着膜15を短時間で形成できるので、デバイス製造に要する時間の短縮に寄与し、製造効率の向上と製造コストの低減とを実現することができる。
以下、上記配線パターンの形成方法を適用できるデバイスの実施例について説明する。
まず、一実施例として、プラズマ型表示装置(電気光学装置)について説明する。
図8は、本実施例のプラズマ型表示装置500の分解斜視図を示している。
プラズマ型表示装置500は、互いに対向して配置された基板501、502、及びこれらの間に形成される放電表示部510を含んで構成されている。
放電表示部510は、複数の放電室516が集合されたものである。複数の放電室516のうち、赤色放電室516(R)、緑色放電室516(G)、青色放電室516(B)の3つの放電室516が対になって1画素を構成するように配置されている。
また、隔壁515によって区画される長方形状の領域の内側には蛍光体517が配置されている。蛍光体517は、赤、緑、青の何れかの蛍光を発光するもので、赤色放電室516(R)の底部には赤色蛍光体517(R)が、緑色放電室516(G)の底部には緑色蛍光体517(G)が、青色放電室516(B)の底部には青色蛍光体517(B)が各々配置されている。
基板501と基板502とは、前記アドレス電極511…と表示電極512…を互いに直交させるように対向させて相互に貼り合わされている。
上記アドレス電極511と表示電極512は図示略の交流電源に接続されている。各電極に通電することにより、放電表示部510において蛍光体517が励起発光し、カラー表示が可能となる。
次に、上記配線パターンの形成方法を適用できるデバイスとして、非接触型カード媒体の実施例について説明する。図9に示すように、本実施例に係る非接触型カード媒体400は、カード基体402とカードカバー418から成る筐体内に、半導体集積回路チップ408とアンテナ回路412を内蔵し、図示されない外部の送受信機と電磁波または静電容量結合の少なくとも一方により電力供給あるいはデータ授受の少なくとも一方を行うようになっている。
上記実施例の各デバイスは、電子機器等に搭載して用いることができる。以下、具体例を示しておく。図10(a)は、携帯電話の一例を示した斜視図である。図10(a)において、600は携帯電話本体を示し、601は上記実施例の表示デバイスを備えた表示部を示している。図10(b)は、ワープロ、パソコンなどの携帯型情報処理装置の一例を示した斜視図である。図10(b)において、700は情報処理装置、701はキーボードなどの入力部、703は情報処理本体、702は上記実施例の表示デバイスを備えた表示部を示している。図10(c)は、腕時計型電子機器の一例を示した斜視図である。図10(c)において、800は時計本体を示し、801は上記実施例の表示デバイスを備えた表示部を示している。
図10(a)〜(c)に示す電子機器は、上記実施例の表示デバイスを備えたものであるので、小型化、薄型化及び高品質化が可能となる。
なお、上記表示デバイスとしては、プラズマ型表示装置のみならず、液晶表示装置、有機エレクトロルミネッセンス表示装置、電子放出型表示装置等のいずれも適用が可能である。
Claims (6)
- 基材表面に化学吸着膜を形成する方法であって、
前記基材の表面に酸または塩基を付着させる処理工程と、
前記処理工程後の基材と化学吸着剤とを接触させて前記基材表面に化学吸着剤を付着させる成膜工程とを含み、
前記化学吸着剤が、その分子末端にシリル基(−SiX)、チタニル基(−TiX)、スタニル基(−SnX)(ただし、前記X基はハロゲン基またはアルコキシ基である。)から選ばれる1種以上を有するものであるとともに、前記成膜工程において、前記酸又は前記塩基の存在下で前記基材表面に結合されることを特徴とする化学吸着膜の形成方法。 - 前記成膜工程が、化学吸着剤溶液に前記基材を浸漬する工程であることを特徴とする請求項1に記載の化学吸着膜の形成方法。
- 前記成膜工程が、化学吸着剤の蒸気に前記基材表面を接触させる工程であることを特徴とする請求項1に記載の化学吸着膜の形成方法。
- 表面に親水基を有する前記基材と、親水基と反応する官能基を末端に有する前記化学吸着剤とを用いることを特徴とする請求項1から3のいずれか1項に記載の化学吸着膜の形成方法。
- 前記処理工程に先立って、前記基材の表面に親水処理を施すことを特徴とする請求項4に記載の化学吸着膜の形成方法。
- 請求項1から5のいずれか1項に記載の製造方法により形成されたことを特徴とする化学吸着膜。
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US11/184,913 US7776397B2 (en) | 2004-07-26 | 2005-07-20 | Process for producing chemical adsorption film and chemical adsorption film |
KR1020050066589A KR100636263B1 (ko) | 2004-07-26 | 2005-07-22 | 화학 흡착막의 형성 방법, 및 화학 흡착막 |
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US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
JP4853519B2 (ja) * | 2006-10-16 | 2012-01-11 | コニカミノルタオプト株式会社 | ディスクトラックリートメディア用またはパターンドメディア用磁気記録媒体用基板、ディスクトラックリートメディア用またはパターンドメディア用磁気記録媒体用基板の製造方法、ディスクトラックリートメディア用またはパターンドメディア用磁気記録媒体、及びディスクトラックリートメディア用またはパターンドメディア用磁気記録媒体の製造方法 |
KR20080040119A (ko) * | 2006-11-02 | 2008-05-08 | 삼성전자주식회사 | 디클로로포스포릴기를 함유하는 자기조립단분자막 형성화합물을 이용한 유기박막 트랜지스터의 제조방법 |
JP4367481B2 (ja) * | 2006-11-29 | 2009-11-18 | セイコーエプソン株式会社 | パターン形成方法 |
JP5099811B2 (ja) * | 2006-12-27 | 2012-12-19 | 国立大学法人名古屋大学 | 自己組織化単分子膜作製装置とその利用 |
CN102332395B (zh) * | 2011-09-23 | 2014-03-05 | 复旦大学 | 一种选择性淀积栅氧和栅电极的方法 |
JP5971152B2 (ja) * | 2013-02-26 | 2016-08-17 | ウシオ電機株式会社 | ガラスからなる成形体表面への酸化チタン膜形成方法 |
CN103343336B (zh) * | 2013-06-25 | 2016-03-16 | 奇瑞汽车股份有限公司 | 一种汽车涂料疏水膜层的制备方法 |
JP6224490B2 (ja) * | 2014-03-10 | 2017-11-01 | 東京応化工業株式会社 | エッチングマスクを形成するためのガラス基板の前処理方法 |
CN107275515B (zh) | 2017-06-20 | 2019-12-03 | 深圳市华星光电技术有限公司 | Oled器件封装方法、结构、oled器件及显示屏 |
JP7053247B2 (ja) | 2017-12-21 | 2022-04-12 | 東京応化工業株式会社 | 表面処理液、表面処理方法、及びパターン倒れの抑制方法 |
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