JP2001284798A5 - - Google Patents

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Publication number
JP2001284798A5
JP2001284798A5 JP2000099930A JP2000099930A JP2001284798A5 JP 2001284798 A5 JP2001284798 A5 JP 2001284798A5 JP 2000099930 A JP2000099930 A JP 2000099930A JP 2000099930 A JP2000099930 A JP 2000099930A JP 2001284798 A5 JP2001284798 A5 JP 2001284798A5
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JP
Japan
Prior art keywords
film pattern
thin film
organic molecular
pattern
thiol
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000099930A
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English (en)
Japanese (ja)
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JP2001284798A (ja
JP3646784B2 (ja
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Priority to JP2000099930A priority Critical patent/JP3646784B2/ja
Priority claimed from JP2000099930A external-priority patent/JP3646784B2/ja
Priority to US09/820,758 priority patent/US6624071B2/en
Publication of JP2001284798A publication Critical patent/JP2001284798A/ja
Priority to US10/425,622 priority patent/US6677238B2/en
Publication of JP2001284798A5 publication Critical patent/JP2001284798A5/ja
Application granted granted Critical
Publication of JP3646784B2 publication Critical patent/JP3646784B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000099930A 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体 Expired - Lifetime JP3646784B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000099930A JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体
US09/820,758 US6624071B2 (en) 2000-03-31 2001-03-30 Systems and method for fabrication of a thin film pattern
US10/425,622 US6677238B2 (en) 2000-03-31 2003-04-30 System and methods for fabrication of a thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000099930A JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体

Publications (3)

Publication Number Publication Date
JP2001284798A JP2001284798A (ja) 2001-10-12
JP2001284798A5 true JP2001284798A5 (https=) 2005-03-03
JP3646784B2 JP3646784B2 (ja) 2005-05-11

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Family Applications (1)

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JP2000099930A Expired - Lifetime JP3646784B2 (ja) 2000-03-31 2000-03-31 薄膜パタ−ンの製造方法および微細構造体

Country Status (2)

Country Link
US (2) US6624071B2 (https=)
JP (1) JP3646784B2 (https=)

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JP4068883B2 (ja) * 2002-04-22 2008-03-26 セイコーエプソン株式会社 導電膜配線の形成方法、膜構造体の製造方法、電気光学装置の製造方法、及び電子機器の製造方法
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JP4572868B2 (ja) * 2003-05-12 2010-11-04 セイコーエプソン株式会社 配線パターン形成方法、非接触型カード媒体の製造方法、電気光学装置の製造方法及びアクティブマトリクス基板の製造方法
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JP4281584B2 (ja) * 2004-03-04 2009-06-17 セイコーエプソン株式会社 半導体装置の製造方法
US7547978B2 (en) * 2004-06-14 2009-06-16 Micron Technology, Inc. Underfill and encapsulation of semiconductor assemblies with materials having differing properties
US7235431B2 (en) 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
US7749881B2 (en) * 2005-05-18 2010-07-06 Intermolecular, Inc. Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
US20060093732A1 (en) * 2004-10-29 2006-05-04 David Schut Ink-jet printing of coupling agents for trace or circuit deposition templating
US20060135028A1 (en) * 2004-12-07 2006-06-22 Andreas Klyszcz Substrate for a display and method for manufacturing the same
JP4096941B2 (ja) * 2004-12-10 2008-06-04 セイコーエプソン株式会社 電気配線の形成方法、配線基板の製造方法、電気光学素子の製造方法、電子機器の製造方法、配線基板、電気光学素子、および電子機器
US20080207005A1 (en) * 2005-02-15 2008-08-28 Freescale Semiconductor, Inc. Wafer Cleaning After Via-Etching
WO2007025565A1 (en) * 2005-09-01 2007-03-08 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device
US20090045164A1 (en) * 2006-02-03 2009-02-19 Freescale Semiconductor, Inc. "universal" barrier cmp slurry for use with low dielectric constant interlayer dielectrics
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
US7803719B2 (en) 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP2007281416A (ja) * 2006-03-17 2007-10-25 Seiko Epson Corp 金属配線形成方法及びアクティブマトリクス基板の製造方法
MX2007015979A (es) * 2006-03-31 2009-04-07 Nielsen Media Res Inc Metodos, sistemas y aparato para medicion de multiples fines.
US7790631B2 (en) * 2006-11-21 2010-09-07 Intel Corporation Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
US8120114B2 (en) * 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
US7923298B2 (en) * 2007-09-07 2011-04-12 Micron Technology, Inc. Imager die package and methods of packaging an imager die on a temporary carrier
JP5371247B2 (ja) * 2008-01-06 2013-12-18 Ｄｏｗａエレクトロニクス株式会社 銀塗料およびその製造法
JP5394005B2 (ja) * 2008-05-23 2014-01-22 株式会社ミマキエンジニアリング 無機物のエッチング方法
WO2010029635A1 (ja) * 2008-09-11 2010-03-18 パイオニア株式会社 金属配線の形成方法、及び金属配線を備えた電子部品
JP6197306B2 (ja) * 2013-02-22 2017-09-20 凸版印刷株式会社 薄膜トランジスタの製造方法
US8916469B2 (en) * 2013-03-12 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating copper damascene
JP2019513183A (ja) 2016-02-16 2019-05-23 アリゾナ・ボード・オブ・リージェンツ・オン・ビハーフ・オブ・アリゾナ・ステイト・ユニバーシティーＡｒｉｚｏｎａ Ｂｏａｒｄ ｏｆ Ｒｅｇｅｎｔｓ ｏｎ ｂｅｈａｌｆ ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ 様々な材料の溶解性サポートを用いる３ｄプリンティングを使用する金属製またはセラミックス製部品の製作
US11504770B2 (en) 2016-07-15 2022-11-22 Arizona Board Of Regents On Behalf Of Arizona State University Dissolving metal supports in 3D printed metals and ceramics using sensitization
US10286713B2 (en) * 2016-10-11 2019-05-14 Arizona Board Of Regents On Behalf Of Arizona State University Printing using reactive inks and conductive adhesion promoters
US20180332712A1 (en) * 2017-05-11 2018-11-15 Carpe Diem Technologies, Inc. High-resolution printing technique
WO2018213640A1 (en) 2017-05-17 2018-11-22 Mariana Bertoni Systems and methods for controlling the morphology and porosity of printed reactive inks for high precision printing

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US5635105A (en) * 1994-05-13 1997-06-03 Fuji Photo Film Co., Ltd. Liquid crystal display and optical compensatory sheet and process for preparation of the same
GB9418289D0 (en) 1994-09-10 1994-10-26 Univ Liverpool Solutions or dispersions and a method of synthesising materials having controlled electronic and optical properties therefrom
US5776254A (en) * 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
JP3417751B2 (ja) * 1995-02-13 2003-06-16 株式会社東芝 半導体装置の製造方法
JPH08309918A (ja) 1995-05-22 1996-11-26 Nippon Denkai Kk 銅張積層板とそれを用いたプリント回路板およびこれらの製法
JPH0974273A (ja) 1995-06-27 1997-03-18 Nippon Denkai Kk プリント回路用銅張積層板とその接着剤
US5907008A (en) * 1996-03-18 1999-05-25 Kabushiki Kaisha Toshiba Black coloring composition, high heat resistance light-shielding component, array substrate, liquid crystal and method of manufacturing array substrate
JPH10204350A (ja) 1997-01-27 1998-08-04 Seiko Epson Corp インクとインクジェットヘッドと印刷装置と配線基板
US6191054B1 (en) * 1998-10-08 2001-02-20 Matsushita Electric Industrial Co., Ltd. Method for forming film and method for fabricating semiconductor device
US6413587B1 (en) * 1999-03-02 2002-07-02 International Business Machines Corporation Method for forming polymer brush pattern on a substrate surface
JP2000349078A (ja) * 1999-06-03 2000-12-15 Mitsubishi Electric Corp 化学気相成長装置および半導体装置の製造方法
JP3503546B2 (ja) * 1999-11-01 2004-03-08 信越化学工業株式会社 金属パターンの形成方法

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