JP3409005B2 - 剥離液の再生方法および装置 - Google Patents

剥離液の再生方法および装置

Info

Publication number
JP3409005B2
JP3409005B2 JP2000001000A JP2000001000A JP3409005B2 JP 3409005 B2 JP3409005 B2 JP 3409005B2 JP 2000001000 A JP2000001000 A JP 2000001000A JP 2000001000 A JP2000001000 A JP 2000001000A JP 3409005 B2 JP3409005 B2 JP 3409005B2
Authority
JP
Japan
Prior art keywords
resin
stripping
liquid
component
waste liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2000001000A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001194807A (ja
Inventor
軌雄 五十嵐
恭 井上
巧治 清水
Original Assignee
松下環境空調エンジニアリング株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27283896&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3409005(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 松下環境空調エンジニアリング株式会社 filed Critical 松下環境空調エンジニアリング株式会社
Priority to JP2000001000A priority Critical patent/JP3409005B2/ja
Priority to TW089100532A priority patent/TW480547B/zh
Priority to KR10-2000-0004186A priority patent/KR100420079B1/ko
Publication of JP2001194807A publication Critical patent/JP2001194807A/ja
Application granted granted Critical
Publication of JP3409005B2 publication Critical patent/JP3409005B2/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2000001000A 1999-01-29 2000-01-06 剥離液の再生方法および装置 Ceased JP3409005B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000001000A JP3409005B2 (ja) 1999-01-29 2000-01-06 剥離液の再生方法および装置
TW089100532A TW480547B (en) 1999-01-29 2000-01-14 Recycling method and device of stripping solution
KR10-2000-0004186A KR100420079B1 (ko) 1999-01-29 2000-01-28 박리액의재생방법및장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2258099 1999-01-29
JP11-302743 1999-10-25
JP30274399 1999-10-25
JP11-22580 1999-10-25
JP2000001000A JP3409005B2 (ja) 1999-01-29 2000-01-06 剥離液の再生方法および装置

Publications (2)

Publication Number Publication Date
JP2001194807A JP2001194807A (ja) 2001-07-19
JP3409005B2 true JP3409005B2 (ja) 2003-05-19

Family

ID=27283896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000001000A Ceased JP3409005B2 (ja) 1999-01-29 2000-01-06 剥離液の再生方法および装置

Country Status (3)

Country Link
JP (1) JP3409005B2 (zh)
KR (1) KR100420079B1 (zh)
TW (1) TW480547B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946055B2 (en) 2001-08-22 2005-09-20 International Business Machines Corporation Method for recovering an organic solvent from a waste stream containing supercritical CO2
JP2006069960A (ja) * 2004-09-02 2006-03-16 Nippon Refine Kk ジメチルスルホキシドとモノエタノールアミンを含有する混合系の分離精製方法
KR101266897B1 (ko) * 2006-03-03 2013-05-23 주식회사 동진쎄미켐 레지스트 박리폐액 재생방법 및 재생장치
KR101266883B1 (ko) 2006-03-03 2013-05-23 주식회사 동진쎄미켐 레지스트 박리페액 재생방법 및 재생장치
KR101292475B1 (ko) * 2006-08-29 2013-07-31 동우 화인켐 주식회사 전기분해를 이용한 박리제 재생방법
TWI535494B (zh) * 2011-12-23 2016-06-01 友達光電股份有限公司 光阻剝離液的供應系統及其供應方法
JP6156678B2 (ja) * 2012-10-11 2017-07-05 パナソニックＩｐマネジメント株式会社 レジスト剥離液の再生方法および再生装置
JP6045283B2 (ja) * 2012-10-11 2016-12-14 日本リファイン株式会社 レジスト剥離液の再生方法および再生装置
JP6033033B2 (ja) * 2012-10-11 2016-11-30 日本リファイン株式会社 レジスト剥離液の再生方法および再生装置
CN116332775A (zh) * 2022-07-28 2023-06-27 四川熔增环保科技有限公司 一种剥离液废液的回收再利用方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950012408B1 (ko) * 1993-11-17 1995-10-17 포항종합제철주식회사 전로의 노체수명 연장방법

Also Published As

Publication number Publication date
KR100420079B1 (ko) 2004-02-25
JP2001194807A (ja) 2001-07-19
KR20000076546A (ko) 2000-12-26
TW480547B (en) 2002-03-21

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