KR20000076546A - 박리액의재생방법및장치 - Google Patents
박리액의재생방법및장치 Download PDFInfo
- Publication number
- KR20000076546A KR20000076546A KR1020000004186A KR20000004186A KR20000076546A KR 20000076546 A KR20000076546 A KR 20000076546A KR 1020000004186 A KR1020000004186 A KR 1020000004186A KR 20000004186 A KR20000004186 A KR 20000004186A KR 20000076546 A KR20000076546 A KR 20000076546A
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- component
- peeling
- resin component
- stripping
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 215
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000001172 regenerating effect Effects 0.000 title claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 101
- 229920005989 resin Polymers 0.000 claims abstract description 101
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000004821 distillation Methods 0.000 claims description 62
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 43
- 238000011069 regeneration method Methods 0.000 claims description 31
- 230000008929 regeneration Effects 0.000 claims description 28
- 238000001914 filtration Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000007670 refining Methods 0.000 claims description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- 238000011282 treatment Methods 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 description 13
- 239000011362 coarse particle Substances 0.000 description 8
- 238000011221 initial treatment Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000001944 continuous distillation Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004064 recycling Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 206010036790 Productive cough Diseases 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Liquid Crystal (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
- 기판에 겹친 레지스트수지의 박리공정에서 발생하는, 수지성분을 포함한 사용이 끝난 박리액을 재생하는 방법에 있어서, 수지성분을 제거하여 박리액성분을 얻는 수지성분제거공정을 포함하는 것을 특징으로 한 박리액의 재생방법.
- 제1항에 있어서, 사용이 끝난 박리액은, 레지스트수지에 유래하는 수지성분과, 모노에탄올아민 및 디메틸술폭시드를 포함한 박리액성분을 포함하는 조성으로 이루어진 것을 특징으로 한 박리액의 재생방법.
- 제1항 또는 제2항에 있어서, 사용이 끝난 박리액에는 물성분이 포함되어 있고, 물성분을 제거하는 물성분제거공정을 갖는 것을 특징으로 한 박리액의 재생방법.
- 제1항 또는 제2항에 있어서, 수지성분제거공정 다음에 정제공정을 제공하는 것을 특징으로 한 박리액의 재생방법.
- 제1항 또는 제2항에 있어서, 수지성분제거공정 다음에 여과공정을 제공하는 것을 특징으로 한 박리액의 재생방법.
- 제1항 또는 제2항에 있어서, 저류조 및 또는 처리액조에서 다음 공정으로의 액의 공급을 질소가스의 압송에 의해 행하는 것을 특징으로 한 박리액의 재생방법.
- 기판에 겹친 레지스트수지의 박리공정에서 발생하는 수지성분을 포함하는 사용이 끝난 박리액을 재생하는 장치에 있어서, 사용이 끝난 박리액으로부터 수지성분을 제거하여 박래액성분을 얻는 수지성분제거장치를 포함하는 것을 특징으로 한 박리액재생장치.
- 제7항에 있어서, 물성분을 제거하는 장치를 갖는 것을 특징으로 한 박리액재생장치.
- 제7항 또는 제8항에 있어서, 수지성분제거장치에는 수지성분의 제거에 의해 얻어진 박리액성분을 정제하는 정제장치가 접속되어 있는 것을 특징으로 한 박리액재생장치.
- 제7항 또는 제8항에 있어서, 각 장치의 적어도 박리액성분과의 접촉면은, 박리액성분에 대해서 내부식성재질에 의해 형성되어 있는 것을 특징으로 한 박리액재생장치.
- 제8항에 있어서, 사용이 끝난 박리액의 물성분을 제거하는 장치가 증류탑이고, 증류탑의 박리액성분과의 접촉면이, C를 0.08%이하로 함유하고, Cr을 23.00∼28.00%, Mo를 1.00∼3.50% 및 N을 0.02∼0.08%함유하는 조성의 스텐레스로 형성되어 있는 것을 특징으로 한 박리액재생장치.
- 제7항 또는 제8항에 있어서, 수지성분제거장치에는 그 장치에 의해 얻어진 박리액성분을 여과하는 여과장치가 접속되어 있는 것을 특징으로 한 박리액재생장치.
- 제9항에 있어서, 정제장치가 증류탑이고, 증류탑의 박리액성분과의 접촉면이, C를 0.08%이하로 함유하고, Cr을 23.00∼28.00%, Mo를 1.00∼3.50% 및 N을 0.02∼0.08%함유하는 조성의 스텐레스로 형성되어 있는 것을 특징으로 한 박리액재생장치.
- 제9항에 있어서, 정제장치에는, 그 장치로부터 얻어진 정제된 박리액성분을 여과하는 여과장치가 접속되어 있는 것을 특징으로 한 박리액재생장치.
- 제7항 또는 제8항에 있어서, 저류조 및 또는 처리액조에는, 조내의 액을 다음 공정으로 공급하는 질소가스의 압송수단이 설치되어 있는 것을 특징으로 한 박리액재생장치.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-22580 | 1999-01-29 | ||
JP2258099 | 1999-01-29 | ||
JP30274399 | 1999-10-25 | ||
JP99-302743 | 1999-10-25 | ||
JP2000001000A JP3409005B2 (ja) | 1999-01-29 | 2000-01-06 | 剥離液の再生方法および装置 |
JP2000-1000 | 2000-01-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000076546A true KR20000076546A (ko) | 2000-12-26 |
KR100420079B1 KR100420079B1 (ko) | 2004-02-25 |
Family
ID=27283896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0004186A KR100420079B1 (ko) | 1999-01-29 | 2000-01-28 | 박리액의재생방법및장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3409005B2 (ko) |
KR (1) | KR100420079B1 (ko) |
TW (1) | TW480547B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101292475B1 (ko) * | 2006-08-29 | 2013-07-31 | 동우 화인켐 주식회사 | 전기분해를 이용한 박리제 재생방법 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946055B2 (en) | 2001-08-22 | 2005-09-20 | International Business Machines Corporation | Method for recovering an organic solvent from a waste stream containing supercritical CO2 |
JP2006069960A (ja) * | 2004-09-02 | 2006-03-16 | Nippon Refine Kk | ジメチルスルホキシドとモノエタノールアミンを含有する混合系の分離精製方法 |
KR101266897B1 (ko) * | 2006-03-03 | 2013-05-23 | 주식회사 동진쎄미켐 | 레지스트 박리폐액 재생방법 및 재생장치 |
KR101266883B1 (ko) | 2006-03-03 | 2013-05-23 | 주식회사 동진쎄미켐 | 레지스트 박리페액 재생방법 및 재생장치 |
TWI535494B (zh) * | 2011-12-23 | 2016-06-01 | 友達光電股份有限公司 | 光阻剝離液的供應系統及其供應方法 |
JP6156678B2 (ja) * | 2012-10-11 | 2017-07-05 | パナソニックIpマネジメント株式会社 | レジスト剥離液の再生方法および再生装置 |
JP6045283B2 (ja) * | 2012-10-11 | 2016-12-14 | 日本リファイン株式会社 | レジスト剥離液の再生方法および再生装置 |
JP6033033B2 (ja) * | 2012-10-11 | 2016-11-30 | 日本リファイン株式会社 | レジスト剥離液の再生方法および再生装置 |
CN116332775A (zh) * | 2022-07-28 | 2023-06-27 | 四川熔增环保科技有限公司 | 一种剥离液废液的回收再利用方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950012408B1 (ko) * | 1993-11-17 | 1995-10-17 | 포항종합제철주식회사 | 전로의 노체수명 연장방법 |
-
2000
- 2000-01-06 JP JP2000001000A patent/JP3409005B2/ja not_active Ceased
- 2000-01-14 TW TW089100532A patent/TW480547B/zh not_active IP Right Cessation
- 2000-01-28 KR KR10-2000-0004186A patent/KR100420079B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101292475B1 (ko) * | 2006-08-29 | 2013-07-31 | 동우 화인켐 주식회사 | 전기분해를 이용한 박리제 재생방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3409005B2 (ja) | 2003-05-19 |
KR100420079B1 (ko) | 2004-02-25 |
JP2001194807A (ja) | 2001-07-19 |
TW480547B (en) | 2002-03-21 |
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