JP3384896B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP3384896B2
JP3384896B2 JP30504694A JP30504694A JP3384896B2 JP 3384896 B2 JP3384896 B2 JP 3384896B2 JP 30504694 A JP30504694 A JP 30504694A JP 30504694 A JP30504694 A JP 30504694A JP 3384896 B2 JP3384896 B2 JP 3384896B2
Authority
JP
Japan
Prior art keywords
insulating layer
impurity region
region
semiconductor device
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30504694A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08162635A (ja
Inventor
広嗣 木村
正 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30504694A priority Critical patent/JP3384896B2/ja
Priority to TW084100059A priority patent/TW285763B/zh
Priority to KR1019950046737A priority patent/KR100190834B1/ko
Priority to CN95120238A priority patent/CN1053296C/zh
Publication of JPH08162635A publication Critical patent/JPH08162635A/ja
Priority to US08/968,897 priority patent/US6069379A/en
Priority to CNB981234186A priority patent/CN1152432C/zh
Priority to US09/443,016 priority patent/US6214664B1/en
Application granted granted Critical
Publication of JP3384896B2 publication Critical patent/JP3384896B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP30504694A 1994-12-08 1994-12-08 半導体装置およびその製造方法 Expired - Fee Related JP3384896B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP30504694A JP3384896B2 (ja) 1994-12-08 1994-12-08 半導体装置およびその製造方法
TW084100059A TW285763B (en:Method) 1994-12-08 1995-01-06
KR1019950046737A KR100190834B1 (ko) 1994-12-08 1995-12-05 반도체장치및그제조방법
CN95120238A CN1053296C (zh) 1994-12-08 1995-12-07 半导体器件及其制造方法
US08/968,897 US6069379A (en) 1994-12-08 1997-11-06 Semiconductor device and method of manufacturing the same
CNB981234186A CN1152432C (zh) 1994-12-08 1998-10-22 半导体器件及其制造方法
US09/443,016 US6214664B1 (en) 1994-12-08 1999-11-18 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30504694A JP3384896B2 (ja) 1994-12-08 1994-12-08 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH08162635A JPH08162635A (ja) 1996-06-21
JP3384896B2 true JP3384896B2 (ja) 2003-03-10

Family

ID=17940466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30504694A Expired - Fee Related JP3384896B2 (ja) 1994-12-08 1994-12-08 半導体装置およびその製造方法

Country Status (2)

Country Link
JP (1) JP3384896B2 (en:Method)
TW (1) TW285763B (en:Method)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3941133B2 (ja) 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
KR100236067B1 (ko) * 1996-09-02 1999-12-15 김영환 반도체 메모리 소자 제조방법
JP2000058782A (ja) 1998-08-06 2000-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000077520A (ja) 1998-08-28 2000-03-14 Fujitsu Ltd 半導体装置の製造方法
KR100451759B1 (ko) * 1998-11-10 2004-11-16 주식회사 하이닉스반도체 반도체소자제조방법
JP3205306B2 (ja) 1998-12-08 2001-09-04 松下電器産業株式会社 半導体装置およびその製造方法
JP4602818B2 (ja) * 2005-03-30 2010-12-22 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5003743B2 (ja) * 2009-10-20 2012-08-15 富士通セミコンダクター株式会社 半導体装置とその製造方法
CN103633007A (zh) * 2012-08-17 2014-03-12 上海华虹宏力半导体制造有限公司 防止浅沟槽隔离边缘硅接触孔漏电的方法

Also Published As

Publication number Publication date
TW285763B (en:Method) 1996-09-11
JPH08162635A (ja) 1996-06-21

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