JP3335667B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP3335667B2 JP3335667B2 JP13297892A JP13297892A JP3335667B2 JP 3335667 B2 JP3335667 B2 JP 3335667B2 JP 13297892 A JP13297892 A JP 13297892A JP 13297892 A JP13297892 A JP 13297892A JP 3335667 B2 JP3335667 B2 JP 3335667B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- insulating film
- film
- cerium oxide
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 11
- 238000005498 polishing Methods 0.000 claims description 61
- 239000002245 particle Substances 0.000 claims description 31
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 26
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 150000001340 alkali metals Chemical class 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000000725 suspension Substances 0.000 description 7
- 239000005380 borophosphosilicate glass Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13297892A JP3335667B2 (ja) | 1992-05-26 | 1992-05-26 | 半導体装置の製造方法 |
| US08/066,375 US5445996A (en) | 1992-05-26 | 1993-05-25 | Method for planarizing a semiconductor device having a amorphous layer |
| KR1019930009027A KR0153787B1 (ko) | 1992-05-26 | 1993-05-25 | 반도체장치의 제조방법 및 평탄화방법 |
| GB9326509A GB2275129B (en) | 1992-05-26 | 1993-05-26 | Method for planarizing a layer on a semiconductor wafer |
| GB9611104A GB2298961B (en) | 1992-05-26 | 1993-05-26 | Polishing apparatus for planarizing layer on a semiconductor wafer |
| GB9326510A GB2275130B (en) | 1992-05-26 | 1993-05-26 | Polishing apparatus and method for planarizing layer on a semiconductor wafer |
| GB9310909A GB2267389B (en) | 1992-05-26 | 1993-05-26 | Polishing method for planarizing layer on a semiconductor wafer |
| GB9611090A GB2298960B (en) | 1992-05-26 | 1993-05-26 | Polishing apparatus and method for planarizing layer on a semiconductor wafer |
| GB9611070A GB2299895B (en) | 1992-05-26 | 1993-05-26 | polishing apparatus for planarizing layer on a semiconductor wafer |
| US08/451,226 US5597341A (en) | 1992-05-26 | 1995-05-26 | Semiconductor planarizing apparatus |
| US08/897,570 US5948205A (en) | 1992-05-26 | 1997-07-21 | Polishing apparatus and method for planarizing layer on a semiconductor wafer |
| US08/897,324 US5914275A (en) | 1992-05-26 | 1997-07-21 | Polishing apparatus and method for planarizing layer on a semiconductor wafer |
| KR1019980001478A KR0153906B1 (ko) | 1992-05-26 | 1998-01-12 | 연마장치와 연마방법 및 반도체 웨이퍼의 평탄화장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13297892A JP3335667B2 (ja) | 1992-05-26 | 1992-05-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05326469A JPH05326469A (ja) | 1993-12-10 |
| JP3335667B2 true JP3335667B2 (ja) | 2002-10-21 |
Family
ID=15093936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13297892A Expired - Lifetime JP3335667B2 (ja) | 1992-05-26 | 1992-05-26 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3335667B2 (ko) |
| KR (1) | KR0153787B1 (ko) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216094A (ja) * | 1993-01-18 | 1994-08-05 | Mitsubishi Materials Shilicon Corp | 半導体基板の研磨方法とこれを用いた半導体基板の製造方法 |
| KR100336598B1 (ko) * | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | 산화 세륨 연마제 제조용 산화 세륨 입자 |
| US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
| CN1282226C (zh) | 1996-09-30 | 2006-10-25 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
| JPH10309660A (ja) * | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
| JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| WO2001000744A1 (fr) | 1999-06-28 | 2001-01-04 | Nissan Chemical Industries, Ltd. | Compose abrasif pour plateau en verre de disque dur |
| KR100578231B1 (ko) * | 2000-06-30 | 2006-05-12 | 주식회사 하이닉스반도체 | 다마신 게이트공정에서의 평탄화를 위한 반도체소자의제조 방법 |
| TWI256971B (en) | 2002-08-09 | 2006-06-21 | Hitachi Chemical Co Ltd | CMP abrasive and method for polishing substrate |
| JP2005203394A (ja) | 2004-01-13 | 2005-07-28 | Nec Electronics Corp | 半導体装置の製造方法 |
| EP1566420A1 (en) | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| JP4292117B2 (ja) | 2004-07-15 | 2009-07-08 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
| JP4756996B2 (ja) * | 2005-11-02 | 2011-08-24 | 三井金属鉱業株式会社 | セリウム系研摩材 |
| JP5182483B2 (ja) | 2005-12-16 | 2013-04-17 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット |
| JP2008132593A (ja) * | 2007-12-14 | 2008-06-12 | Hitachi Chem Co Ltd | 酸化セリウムスラリー、酸化セリウム研磨剤及び基板の研磨法 |
-
1992
- 1992-05-26 JP JP13297892A patent/JP3335667B2/ja not_active Expired - Lifetime
-
1993
- 1993-05-25 KR KR1019930009027A patent/KR0153787B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05326469A (ja) | 1993-12-10 |
| KR0153787B1 (ko) | 1998-12-01 |
| KR940006204A (ko) | 1994-03-23 |
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