JP3290339B2 - フルオロケイ酸塩ガラス層を形成する方法 - Google Patents
フルオロケイ酸塩ガラス層を形成する方法Info
- Publication number
- JP3290339B2 JP3290339B2 JP25535295A JP25535295A JP3290339B2 JP 3290339 B2 JP3290339 B2 JP 3290339B2 JP 25535295 A JP25535295 A JP 25535295A JP 25535295 A JP25535295 A JP 25535295A JP 3290339 B2 JP3290339 B2 JP 3290339B2
- Authority
- JP
- Japan
- Prior art keywords
- fluorine
- precursor gas
- forming
- silicon
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P14/6924—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H10P14/6336—
-
- H10P14/6923—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/316,302 US5563105A (en) | 1994-09-30 | 1994-09-30 | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
| US316302 | 1994-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08213388A JPH08213388A (ja) | 1996-08-20 |
| JP3290339B2 true JP3290339B2 (ja) | 2002-06-10 |
Family
ID=23228451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25535295A Expired - Lifetime JP3290339B2 (ja) | 1994-09-30 | 1995-10-02 | フルオロケイ酸塩ガラス層を形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5563105A (oth) |
| EP (1) | EP0704885B1 (oth) |
| JP (1) | JP3290339B2 (oth) |
| DE (1) | DE69534699T2 (oth) |
| TW (1) | TW279245B (oth) |
Families Citing this family (217)
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| JP2973905B2 (ja) * | 1995-12-27 | 1999-11-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6121163A (en) * | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
| JP2917897B2 (ja) * | 1996-03-29 | 1999-07-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| JP3355949B2 (ja) * | 1996-08-16 | 2002-12-09 | 日本電気株式会社 | プラズマcvd絶縁膜の形成方法 |
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| JP3773340B2 (ja) | 1996-12-18 | 2006-05-10 | 大日本印刷株式会社 | 低屈折率SiO2 膜及びその製造方法 |
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| US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
| GB9819817D0 (en) * | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
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| US6458718B1 (en) | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
| JP5116189B2 (ja) * | 2000-07-18 | 2013-01-09 | アプライド マテリアルズ インコーポレイテッド | 半導体装置の製造方法及び装置 |
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| KR100529676B1 (ko) | 2003-12-31 | 2005-11-17 | 동부아남반도체 주식회사 | 듀얼 다마신 패턴을 형성하는 방법 |
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| US4246296A (en) * | 1979-02-14 | 1981-01-20 | Bell Telephone Laboratories, Incorporated | Controlling the properties of native films using selective growth chemistry |
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| US4397670A (en) * | 1981-10-05 | 1983-08-09 | Corning Glass Works | Method of making alkali metal, calcium fluorosilicate glass-ceramic articles |
| JPS60144940A (ja) * | 1984-01-07 | 1985-07-31 | Semiconductor Energy Lab Co Ltd | 酸化珪素作製方法 |
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| JP2811762B2 (ja) * | 1989-07-04 | 1998-10-15 | セイコーエプソン株式会社 | 絶縁ゲート型電界効果トランジスタの製造方法 |
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| US5124278A (en) * | 1990-09-21 | 1992-06-23 | Air Products And Chemicals, Inc. | Amino replacements for arsine, antimony and phosphine |
| JP2697315B2 (ja) * | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
| JPH04341568A (ja) * | 1991-05-16 | 1992-11-27 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
| US5279865A (en) * | 1991-06-28 | 1994-01-18 | Digital Equipment Corporation | High throughput interlevel dielectric gap filling process |
| JPH05135876A (ja) * | 1991-11-15 | 1993-06-01 | Tdk Corp | 薄膜電界発光素子及びその製造方法 |
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- 1995-09-22 DE DE69534699T patent/DE69534699T2/de not_active Expired - Lifetime
- 1995-10-02 JP JP25535295A patent/JP3290339B2/ja not_active Expired - Lifetime
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| EP0704885B1 (en) | 2005-12-21 |
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