JP3105643B2 - 半導体ウェハの処理方法 - Google Patents

半導体ウェハの処理方法

Info

Publication number
JP3105643B2
JP3105643B2 JP04136820A JP13682092A JP3105643B2 JP 3105643 B2 JP3105643 B2 JP 3105643B2 JP 04136820 A JP04136820 A JP 04136820A JP 13682092 A JP13682092 A JP 13682092A JP 3105643 B2 JP3105643 B2 JP 3105643B2
Authority
JP
Japan
Prior art keywords
layer
wafer
deposition
hole
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04136820A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07193063A (ja
Inventor
デビッド ドブソン クリストファー
Original Assignee
トリコン テクノロジーズ リミティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB919111440A external-priority patent/GB9111440D0/en
Priority claimed from GB929202745A external-priority patent/GB9202745D0/en
Application filed by トリコン テクノロジーズ リミティド filed Critical トリコン テクノロジーズ リミティド
Publication of JPH07193063A publication Critical patent/JPH07193063A/ja
Application granted granted Critical
Publication of JP3105643B2 publication Critical patent/JP3105643B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4084—Through-connections; Vertical interconnect access [VIA] connections by deforming at least one of the conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/059—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by reflowing or applying pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP04136820A 1991-05-28 1992-05-28 半導体ウェハの処理方法 Expired - Lifetime JP3105643B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB919111440A GB9111440D0 (en) 1991-05-28 1991-05-28 Forming a layer
GB9111440:5 1992-02-10
GB9202745:7 1992-02-10
GB929202745A GB9202745D0 (en) 1992-02-10 1992-02-10 Forming a layer

Publications (2)

Publication Number Publication Date
JPH07193063A JPH07193063A (ja) 1995-07-28
JP3105643B2 true JP3105643B2 (ja) 2000-11-06

Family

ID=26298966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04136820A Expired - Lifetime JP3105643B2 (ja) 1991-05-28 1992-05-28 半導体ウェハの処理方法

Country Status (6)

Country Link
EP (1) EP0516344B1 (https=)
JP (1) JP3105643B2 (https=)
KR (1) KR100242602B1 (https=)
AT (1) ATE251342T1 (https=)
DE (1) DE69233222T2 (https=)
TW (1) TW221521B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932289A (en) * 1991-05-28 1999-08-03 Trikon Technologies Limited Method for filling substrate recesses using pressure and heat treatment
GB9414145D0 (en) * 1994-07-13 1994-08-31 Electrotech Ltd Forming a layer
GB9402486D0 (en) * 1994-02-09 1994-03-30 Electrotech Ltd Forming a layer
KR960026249A (ko) * 1994-12-12 1996-07-22 윌리엄 이. 힐러 고압, 저온 반도체 갭 충진 프로세스
KR960042974A (https=) * 1995-05-23 1996-12-21
US5857368A (en) * 1995-10-06 1999-01-12 Applied Materials, Inc. Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion
GB9619461D0 (en) * 1996-09-18 1996-10-30 Electrotech Ltd Method of processing a workpiece
GB2319532B (en) * 1996-11-22 2001-01-31 Trikon Equip Ltd Method and apparatus for treating a semiconductor wafer
GB2319533B (en) 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
US6218277B1 (en) 1998-01-26 2001-04-17 Texas Instruments Incorporated Method for filling a via opening or contact opening in an integrated circuit
US7322981B2 (en) 2003-08-28 2008-01-29 Jackson Roger P Polyaxial bone screw with split retainer ring
JP4357486B2 (ja) 2003-06-18 2009-11-04 ロジャー・ピー・ジャクソン スプライン捕捉連結部を備えた多軸骨ねじ
US7160300B2 (en) 2004-02-27 2007-01-09 Jackson Roger P Orthopedic implant rod reduction tool set and method
US10049927B2 (en) 2016-06-10 2018-08-14 Applied Materials, Inc. Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN113543527B (zh) * 2021-07-09 2022-12-30 广东工业大学 载板填孔工艺的填充基材选型方法及载板填孔工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0393381B1 (en) * 1989-04-17 1995-11-08 International Business Machines Corporation Lamination method for coating the sidewall or filling a cavity in a substrate
US5011793A (en) * 1990-06-19 1991-04-30 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum deposition using pressurized reflow process

Also Published As

Publication number Publication date
DE69233222T2 (de) 2004-08-26
DE69233222D1 (de) 2003-11-06
ATE251342T1 (de) 2003-10-15
EP0516344A1 (en) 1992-12-02
JPH07193063A (ja) 1995-07-28
EP0516344B1 (en) 2003-10-01
KR100242602B1 (ko) 2000-02-01
TW221521B (https=) 1994-03-01
KR920022405A (ko) 1992-12-19

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