JP3076311B2 - 酸化物焼結体スパッタリングターゲット組立体 - Google Patents

酸化物焼結体スパッタリングターゲット組立体

Info

Publication number
JP3076311B2
JP3076311B2 JP10297571A JP29757198A JP3076311B2 JP 3076311 B2 JP3076311 B2 JP 3076311B2 JP 10297571 A JP10297571 A JP 10297571A JP 29757198 A JP29757198 A JP 29757198A JP 3076311 B2 JP3076311 B2 JP 3076311B2
Authority
JP
Japan
Prior art keywords
target
oxide sintered
sintered body
erosion
target assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10297571A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000119847A (ja
Inventor
慶一 石塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Priority to JP10297571A priority Critical patent/JP3076311B2/ja
Priority to PCT/JP1999/005274 priority patent/WO2000020654A1/ja
Priority to KR1020007005995A priority patent/KR100332476B1/ko
Priority to CNB998017779A priority patent/CN1238552C/zh
Priority to TW088116588A priority patent/TW448237B/zh
Publication of JP2000119847A publication Critical patent/JP2000119847A/ja
Application granted granted Critical
Publication of JP3076311B2 publication Critical patent/JP3076311B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP10297571A 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体 Expired - Lifetime JP3076311B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10297571A JP3076311B2 (ja) 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体
PCT/JP1999/005274 WO2000020654A1 (fr) 1998-10-06 1999-09-28 Corps de cible de pulverisation realise par frittage d'oxyde
KR1020007005995A KR100332476B1 (ko) 1998-10-06 1999-09-28 산화물 소결체 스팟터링 타겟트 조립체
CNB998017779A CN1238552C (zh) 1998-10-06 1999-09-28 烧结氧化物溅射靶组件
TW088116588A TW448237B (en) 1998-10-06 1999-09-28 Oxide sintered compact sputtering target assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10297571A JP3076311B2 (ja) 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体

Publications (2)

Publication Number Publication Date
JP2000119847A JP2000119847A (ja) 2000-04-25
JP3076311B2 true JP3076311B2 (ja) 2000-08-14

Family

ID=17848284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10297571A Expired - Lifetime JP3076311B2 (ja) 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体

Country Status (5)

Country Link
JP (1) JP3076311B2 (ko)
KR (1) KR100332476B1 (ko)
CN (1) CN1238552C (ko)
TW (1) TW448237B (ko)
WO (1) WO2000020654A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020069603A (ko) * 2001-02-27 2002-09-05 임조섭 마그네트론 스퍼터링 장치용 스퍼터링 타겟
JP2003264307A (ja) * 2002-03-11 2003-09-19 Sharp Corp 薄膜太陽電池及びその製造方法
CN1756857B (zh) * 2003-03-04 2010-09-29 日矿金属株式会社 溅射靶、光信息记录介质用薄膜及其制造方法
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
JP4882332B2 (ja) * 2005-10-11 2012-02-22 大日本印刷株式会社 スパッタ装置
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
JP2009127125A (ja) * 2007-11-28 2009-06-11 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット材およびこれから得られるスパッタリングターゲット
CN202322993U (zh) * 2011-11-21 2012-07-11 深圳市华星光电技术有限公司 透明导电层的溅射靶材构造
CN104532198A (zh) * 2014-12-16 2015-04-22 张家港市铭斯特光电科技有限公司 一种磁控溅射镀膜用阴极
CN105734508B (zh) * 2016-04-08 2019-08-16 有研亿金新材料有限公司 一种氧化物靶材及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus
JP2720755B2 (ja) * 1993-04-23 1998-03-04 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｔｉターゲット材
JP2917743B2 (ja) * 1993-04-23 1999-07-12 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｓｉターゲット材
JPH08176809A (ja) * 1994-12-21 1996-07-09 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその再利用方法
JPH09111445A (ja) * 1995-10-12 1997-04-28 Dainippon Printing Co Ltd スパッタリングターゲット

Also Published As

Publication number Publication date
WO2000020654A1 (fr) 2000-04-13
JP2000119847A (ja) 2000-04-25
KR100332476B1 (ko) 2002-04-13
CN1238552C (zh) 2006-01-25
KR20010032706A (ko) 2001-04-25
TW448237B (en) 2001-08-01
CN1287578A (zh) 2001-03-14

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