JP2820910B2 - 半導体集積回路の内部電圧昇圧回路 - Google Patents

半導体集積回路の内部電圧昇圧回路

Info

Publication number
JP2820910B2
JP2820910B2 JP7263134A JP26313495A JP2820910B2 JP 2820910 B2 JP2820910 B2 JP 2820910B2 JP 7263134 A JP7263134 A JP 7263134A JP 26313495 A JP26313495 A JP 26313495A JP 2820910 B2 JP2820910 B2 JP 2820910B2
Authority
JP
Japan
Prior art keywords
voltage
output
boosting
node
oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7263134A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08205526A (ja
Inventor
世昇 尹
炳▲ちょる▼ 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH08205526A publication Critical patent/JPH08205526A/ja
Application granted granted Critical
Publication of JP2820910B2 publication Critical patent/JP2820910B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
JP7263134A 1994-10-13 1995-10-11 半導体集積回路の内部電圧昇圧回路 Expired - Fee Related JP2820910B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1994P26238 1994-10-13
KR1019940026238A KR0149224B1 (ko) 1994-10-13 1994-10-13 반도체 집적장치의 내부전압 승압회로

Publications (2)

Publication Number Publication Date
JPH08205526A JPH08205526A (ja) 1996-08-09
JP2820910B2 true JP2820910B2 (ja) 1998-11-05

Family

ID=19395055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7263134A Expired - Fee Related JP2820910B2 (ja) 1994-10-13 1995-10-11 半導体集積回路の内部電圧昇圧回路

Country Status (7)

Country Link
US (1) US5579276A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2820910B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR0149224B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1169153C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE19538033C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2294345B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW285772B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3542675B2 (ja) * 1995-07-24 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置
KR19990050493A (ko) * 1997-12-17 1999-07-05 전주범 반도체 메모리 장치용 프리차지 회로
US6341095B1 (en) * 2001-02-21 2002-01-22 International Business Machines Corporation Apparatus for increasing pulldown rate of a bitline in a memory device during a read operation
US6721210B1 (en) 2002-08-30 2004-04-13 Nanoamp Solutions, Inc. Voltage boosting circuit for a low power semiconductor memory
US6891745B2 (en) * 2002-11-08 2005-05-10 Taiwan Semiconductor Manufacturing Company Design concept for SRAM read margin
JP2005116106A (ja) * 2003-10-09 2005-04-28 Elpida Memory Inc 半導体記憶装置とその製造方法
KR100696958B1 (ko) * 2005-04-29 2007-03-20 주식회사 하이닉스반도체 내부 전압 발생 회로
CN104638919A (zh) * 2013-11-14 2015-05-20 中芯国际集成电路制造(上海)有限公司 用于i/o接口的两级升压转换电路
CN108540124A (zh) * 2018-04-16 2018-09-14 电子科技大学 一种电平转换电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136723A (en) * 1979-04-11 1980-10-24 Mitsubishi Electric Corp Booster circuit
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
JPS63290159A (ja) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd 昇圧回路
US5038325A (en) * 1990-03-26 1991-08-06 Micron Technology Inc. High efficiency charge pump circuit
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
JPH0828965B2 (ja) * 1992-09-02 1996-03-21 日本電気株式会社 電圧変換回路
US5347172A (en) * 1992-10-22 1994-09-13 United Memories, Inc. Oscillatorless substrate bias generator
JPH06309868A (ja) * 1993-04-26 1994-11-04 Hitachi Ltd 半導体記憶装置
JP2978671B2 (ja) * 1993-06-04 1999-11-15 九州日本電気株式会社 半導体メモリ装置
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories

Also Published As

Publication number Publication date
DE19538033C2 (de) 1998-03-19
CN1149188A (zh) 1997-05-07
CN1169153C (zh) 2004-09-29
GB2294345B (en) 1996-12-11
GB9520765D0 (en) 1995-12-13
US5579276A (en) 1996-11-26
DE19538033A1 (de) 1996-04-18
TW285772B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-09-11
JPH08205526A (ja) 1996-08-09
KR960015904A (ko) 1996-05-22
KR0149224B1 (ko) 1998-10-01
GB2294345A (en) 1996-04-24

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