CN1169153C - 半导体存储设备中的内电压提升电路 - Google Patents

半导体存储设备中的内电压提升电路 Download PDF

Info

Publication number
CN1169153C
CN1169153C CNB951167804A CN95116780A CN1169153C CN 1169153 C CN1169153 C CN 1169153C CN B951167804 A CNB951167804 A CN B951167804A CN 95116780 A CN95116780 A CN 95116780A CN 1169153 C CN1169153 C CN 1169153C
Authority
CN
China
Prior art keywords
voltage
node
pumping
output
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB951167804A
Other languages
English (en)
Chinese (zh)
Other versions
CN1149188A (zh
Inventor
N
尹世昇
金炳喆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1149188A publication Critical patent/CN1149188A/zh
Application granted granted Critical
Publication of CN1169153C publication Critical patent/CN1169153C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
CNB951167804A 1994-10-13 1995-10-13 半导体存储设备中的内电压提升电路 Expired - Fee Related CN1169153C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR26238/94 1994-10-13
KR1019940026238A KR0149224B1 (ko) 1994-10-13 1994-10-13 반도체 집적장치의 내부전압 승압회로
KR26238/1994 1994-10-13

Publications (2)

Publication Number Publication Date
CN1149188A CN1149188A (zh) 1997-05-07
CN1169153C true CN1169153C (zh) 2004-09-29

Family

ID=19395055

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB951167804A Expired - Fee Related CN1169153C (zh) 1994-10-13 1995-10-13 半导体存储设备中的内电压提升电路

Country Status (7)

Country Link
US (1) US5579276A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2820910B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR0149224B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1169153C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE19538033C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2294345B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW285772B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3542675B2 (ja) * 1995-07-24 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置
KR19990050493A (ko) * 1997-12-17 1999-07-05 전주범 반도체 메모리 장치용 프리차지 회로
US6341095B1 (en) * 2001-02-21 2002-01-22 International Business Machines Corporation Apparatus for increasing pulldown rate of a bitline in a memory device during a read operation
US6721210B1 (en) 2002-08-30 2004-04-13 Nanoamp Solutions, Inc. Voltage boosting circuit for a low power semiconductor memory
US6891745B2 (en) * 2002-11-08 2005-05-10 Taiwan Semiconductor Manufacturing Company Design concept for SRAM read margin
JP2005116106A (ja) * 2003-10-09 2005-04-28 Elpida Memory Inc 半導体記憶装置とその製造方法
KR100696958B1 (ko) * 2005-04-29 2007-03-20 주식회사 하이닉스반도체 내부 전압 발생 회로
CN104638919A (zh) * 2013-11-14 2015-05-20 中芯国际集成电路制造(上海)有限公司 用于i/o接口的两级升压转换电路
CN108540124A (zh) * 2018-04-16 2018-09-14 电子科技大学 一种电平转换电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55136723A (en) * 1979-04-11 1980-10-24 Mitsubishi Electric Corp Booster circuit
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4628214A (en) * 1985-05-22 1986-12-09 Sgs Semiconductor Corporation Back bias generator
JPS63290159A (ja) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd 昇圧回路
US5038325A (en) * 1990-03-26 1991-08-06 Micron Technology Inc. High efficiency charge pump circuit
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
JPH0828965B2 (ja) * 1992-09-02 1996-03-21 日本電気株式会社 電圧変換回路
US5347172A (en) * 1992-10-22 1994-09-13 United Memories, Inc. Oscillatorless substrate bias generator
JPH06309868A (ja) * 1993-04-26 1994-11-04 Hitachi Ltd 半導体記憶装置
JP2978671B2 (ja) * 1993-06-04 1999-11-15 九州日本電気株式会社 半導体メモリ装置
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories

Also Published As

Publication number Publication date
GB2294345A (en) 1996-04-24
CN1149188A (zh) 1997-05-07
DE19538033C2 (de) 1998-03-19
TW285772B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-09-11
JP2820910B2 (ja) 1998-11-05
DE19538033A1 (de) 1996-04-18
KR960015904A (ko) 1996-05-22
GB2294345B (en) 1996-12-11
JPH08205526A (ja) 1996-08-09
GB9520765D0 (en) 1995-12-13
US5579276A (en) 1996-11-26
KR0149224B1 (ko) 1998-10-01

Similar Documents

Publication Publication Date Title
US7969234B2 (en) Clock control circuit and voltage pumping device using the same
JP2755047B2 (ja) 昇圧電位発生回路
US5812015A (en) Boosting pulse generation circuit for a semiconductor integrated circuit
JP3085782B2 (ja) 半導体記憶装置
JP4094104B2 (ja) 半導体集積回路装置および記憶装置
US6373315B2 (en) Signal potential conversion circuit
US6198340B1 (en) High efficiency CMOS pump circuit
CN1169153C (zh) 半导体存储设备中的内电压提升电路
CN117877542A (zh) 一种升压电路及非易失性存储器
US20080116958A1 (en) Voltage pumping device
US6414882B1 (en) Low voltage charge pump apparatus and method
JPH10289574A (ja) 電圧発生回路を有した半導体装置
US6240025B1 (en) Voltage generator
JPH02246089A (ja) 半導体集積回路
KR100296612B1 (ko) 출력버퍼의출력전류를크게할수있는반도체기억장치
KR100456593B1 (ko) 저전압 승압 회로
JP2003132679A (ja) 半導体装置
US7333373B2 (en) Charge pump for use in a semiconductor memory
US8138821B2 (en) High voltage pumping circuit
JPH1069796A (ja) 高速試験機能付半導体集積回路
KR940008719B1 (ko) 전압승압회로
US20050068811A1 (en) Non-cascading charge pump circuit and method
JP3012634B1 (ja) 半導体昇圧回路
JPH117776A (ja) 半導体記憶装置
KR100349349B1 (ko) 승압 전압 발생기

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040929

Termination date: 20141013

EXPY Termination of patent right or utility model