JP2699827B2 - 電界放出カソード素子 - Google Patents
電界放出カソード素子Info
- Publication number
- JP2699827B2 JP2699827B2 JP26039093A JP26039093A JP2699827B2 JP 2699827 B2 JP2699827 B2 JP 2699827B2 JP 26039093 A JP26039093 A JP 26039093A JP 26039093 A JP26039093 A JP 26039093A JP 2699827 B2 JP2699827 B2 JP 2699827B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- conductor
- layer
- emitter
- resistance layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 23
- 230000005684 electric field Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26039093A JP2699827B2 (ja) | 1993-09-27 | 1993-09-27 | 電界放出カソード素子 |
| TW083107088A TW245841B (OSRAM) | 1993-09-27 | 1994-08-03 | |
| KR1019940020920A KR0158244B1 (ko) | 1993-09-27 | 1994-08-24 | 전계방출 캐소드 소자 |
| US08/312,643 US5594298A (en) | 1993-09-27 | 1994-09-27 | Field emission cathode device |
| FR9411487A FR2710781B1 (fr) | 1993-09-27 | 1994-09-27 | Dispositif formant cathode d'émission de champ. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26039093A JP2699827B2 (ja) | 1993-09-27 | 1993-09-27 | 電界放出カソード素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0794076A JPH0794076A (ja) | 1995-04-07 |
| JP2699827B2 true JP2699827B2 (ja) | 1998-01-19 |
Family
ID=17347259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26039093A Expired - Fee Related JP2699827B2 (ja) | 1993-09-27 | 1993-09-27 | 電界放出カソード素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5594298A (OSRAM) |
| JP (1) | JP2699827B2 (OSRAM) |
| KR (1) | KR0158244B1 (OSRAM) |
| FR (1) | FR2710781B1 (OSRAM) |
| TW (1) | TW245841B (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
| KR100351068B1 (ko) * | 1995-01-27 | 2003-01-29 | 삼성에스디아이 주식회사 | 전계방출표시장치및그제조방법 |
| KR100405886B1 (ko) * | 1995-08-04 | 2004-04-03 | 프린터블 필드 에미터스 리미티드 | 전계전자방출물질과그제조방법및그물질을이용한소자 |
| JP3060928B2 (ja) * | 1995-12-13 | 2000-07-10 | 双葉電子工業株式会社 | 電界放出カソードとその製造方法 |
| JPH09219144A (ja) * | 1996-02-08 | 1997-08-19 | Futaba Corp | 電界放出カソードとその製造方法 |
| JP3080004B2 (ja) * | 1996-06-21 | 2000-08-21 | 日本電気株式会社 | 電界放出型冷陰極およびその製造方法 |
| WO1998034265A1 (fr) * | 1997-02-04 | 1998-08-06 | Leonid Danilovich Karpov | Mode de preparation d'un appareil a resistances du type planar |
| JPH10340666A (ja) * | 1997-06-09 | 1998-12-22 | Futaba Corp | 電界電子放出素子 |
| US6013986A (en) * | 1997-06-30 | 2000-01-11 | Candescent Technologies Corporation | Electron-emitting device having multi-layer resistor |
| KR100288101B1 (ko) * | 1997-07-25 | 2001-05-02 | 김영남 | 전계 방출 표시기의 셀 구동회로 |
| US6144144A (en) * | 1997-10-31 | 2000-11-07 | Candescent Technologies Corporation | Patterned resistor suitable for electron-emitting device |
| US6059625A (en) | 1999-03-01 | 2000-05-09 | Micron Technology, Inc. | Method of fabricating field emission arrays employing a hard mask to define column lines |
| US6822386B2 (en) | 1999-03-01 | 2004-11-23 | Micron Technology, Inc. | Field emitter display assembly having resistor layer |
| US6017772A (en) * | 1999-03-01 | 2000-01-25 | Micron Technology, Inc. | Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask |
| US7052350B1 (en) * | 1999-08-26 | 2006-05-30 | Micron Technology, Inc. | Field emission device having insulated column lines and method manufacture |
| GB2370914A (en) * | 2000-03-22 | 2002-07-10 | Lg Electronics Inc | Field emission cold cathode structure with fusible link between the main and gate electrodes |
| KR20050113505A (ko) * | 2004-05-29 | 2005-12-02 | 삼성에스디아이 주식회사 | 전계방출 표시장치 및 그 제조방법 |
| JP4817641B2 (ja) | 2004-10-26 | 2011-11-16 | キヤノン株式会社 | 画像形成装置 |
| JP2007087934A (ja) | 2005-08-24 | 2007-04-05 | Canon Inc | 電子源及び画像表示装置 |
| KR100883039B1 (ko) * | 2007-10-01 | 2009-02-09 | 주식회사 동부하이텍 | 반도체 소자 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
| US5142184B1 (en) * | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
| JP2634295B2 (ja) * | 1990-05-17 | 1997-07-23 | 双葉電子工業株式会社 | 電子放出素子 |
| FR2663462B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
| JP2656851B2 (ja) * | 1990-09-27 | 1997-09-24 | 工業技術院長 | 画像表示装置 |
| FR2687839B1 (fr) * | 1992-02-26 | 1994-04-08 | Commissariat A Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source. |
-
1993
- 1993-09-27 JP JP26039093A patent/JP2699827B2/ja not_active Expired - Fee Related
-
1994
- 1994-08-03 TW TW083107088A patent/TW245841B/zh active
- 1994-08-24 KR KR1019940020920A patent/KR0158244B1/ko not_active Expired - Fee Related
- 1994-09-27 FR FR9411487A patent/FR2710781B1/fr not_active Expired - Fee Related
- 1994-09-27 US US08/312,643 patent/US5594298A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR950010072A (ko) | 1995-04-26 |
| KR0158244B1 (ko) | 1998-12-01 |
| FR2710781A1 (fr) | 1995-04-07 |
| JPH0794076A (ja) | 1995-04-07 |
| FR2710781B1 (fr) | 1996-02-16 |
| TW245841B (OSRAM) | 1995-04-21 |
| US5594298A (en) | 1997-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970826 |
|
| LAPS | Cancellation because of no payment of annual fees |