JP2662173B2 - 電気的に消去可能なプログラム可能読み取り専用フラッシュ・メモリ及びその形成方法 - Google Patents

電気的に消去可能なプログラム可能読み取り専用フラッシュ・メモリ及びその形成方法

Info

Publication number
JP2662173B2
JP2662173B2 JP24664793A JP24664793A JP2662173B2 JP 2662173 B2 JP2662173 B2 JP 2662173B2 JP 24664793 A JP24664793 A JP 24664793A JP 24664793 A JP24664793 A JP 24664793A JP 2662173 B2 JP2662173 B2 JP 2662173B2
Authority
JP
Japan
Prior art keywords
gate
forming
sidewall
floating gate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP24664793A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06204495A (ja
Inventor
ルイス・ルチェン・ヒュー
チャンミン・ヒー
セイキ・オグラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH06204495A publication Critical patent/JPH06204495A/ja
Application granted granted Critical
Publication of JP2662173B2 publication Critical patent/JP2662173B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP24664793A 1992-10-30 1993-10-01 電気的に消去可能なプログラム可能読み取り専用フラッシュ・メモリ及びその形成方法 Expired - Lifetime JP2662173B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US968736 1992-10-30
US07/968,736 US5910912A (en) 1992-10-30 1992-10-30 Flash EEPROM with dual-sidewall gate

Publications (2)

Publication Number Publication Date
JPH06204495A JPH06204495A (ja) 1994-07-22
JP2662173B2 true JP2662173B2 (ja) 1997-10-08

Family

ID=25514692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24664793A Expired - Lifetime JP2662173B2 (ja) 1992-10-30 1993-10-01 電気的に消去可能なプログラム可能読み取り専用フラッシュ・メモリ及びその形成方法

Country Status (6)

Country Link
US (2) US5910912A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0667038A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2662173B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR940704063A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW232097B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1994010706A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2292008A (en) * 1994-07-28 1996-02-07 Hyundai Electronics Ind A split gate type flash eeprom cell
US5753953A (en) * 1995-09-11 1998-05-19 Matsushita Electronics Corporation Semiconductor storage device and method of driving the same
US6121087A (en) * 1996-06-18 2000-09-19 Conexant Systems, Inc. Integrated circuit device with embedded flash memory and method for manufacturing same
US5768186A (en) * 1996-10-25 1998-06-16 Ma; Yueh Yale High density single poly metal-gate non-volatile memory cell
EP0924767B1 (de) * 1997-12-22 2011-05-11 Infineon Technologies AG EEPROM-Anordnung und Verfahren zu deren Herstellung
US5991204A (en) * 1998-04-15 1999-11-23 Chang; Ming-Bing Flash eeprom device employing polysilicon sidewall spacer as an erase gate
US6097056A (en) 1998-04-28 2000-08-01 International Business Machines Corporation Field effect transistor having a floating gate
DE19946883A1 (de) * 1999-09-30 2001-04-12 Micronas Gmbh Verfahren zur Herstellung eines integrierten CMOS-Halbleiterspeichers
US6177318B1 (en) * 1999-10-18 2001-01-23 Halo Lsi Design & Device Technology, Inc. Integration method for sidewall split gate monos transistor
WO2001052326A1 (en) * 1999-12-21 2001-07-19 Koninklijke Philips Electronics N.V. Virtual-ground, split-gate flash memory cell arrangements
US6744082B1 (en) * 2000-05-30 2004-06-01 Micron Technology, Inc. Static pass transistor logic with transistors with multiple vertical gates
US6420902B1 (en) 2000-05-31 2002-07-16 Micron Technology, Inc. Field programmable logic arrays with transistors with vertical gates
US6838726B1 (en) 2000-05-31 2005-01-04 Micron Technology, Inc. Horizontal memory devices with vertical gates
US6492231B2 (en) * 2000-06-09 2002-12-10 Winbond Electronics Corporation Method of making triple self-aligned split-gate non-volatile memory device
TW503528B (en) 2000-07-12 2002-09-21 Koninkl Philips Electronics Nv Semiconductor device
US6518110B2 (en) * 2000-09-01 2003-02-11 Wen Ying Wen Method of fabricating memory cell structure of flash memory having annular floating gate
US6396108B1 (en) * 2000-11-13 2002-05-28 Advanced Micro Devices, Inc. Self-aligned double gate silicon-on-insulator (SOI) device
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
TW480680B (en) * 2001-04-03 2002-03-21 Nanya Technology Corp Method for producing self-aligned separated gate-type flash memory cell
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6740557B1 (en) * 2001-07-02 2004-05-25 Taiwan Semiconductor Manufacturing Company Spacer like floating gate formation
DE10138585A1 (de) * 2001-08-06 2003-03-06 Infineon Technologies Ag Speicherzelle
US6657252B2 (en) 2002-03-19 2003-12-02 International Business Machines Corporation FinFET CMOS with NVRAM capability
US6611029B1 (en) * 2002-11-08 2003-08-26 Advanced Micro Devices, Inc. Double gate semiconductor device having separate gates
US6894339B2 (en) * 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process
US7148526B1 (en) 2003-01-23 2006-12-12 Advanced Micro Devices, Inc. Germanium MOSFET devices and methods for making same
US6962851B2 (en) * 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6962852B2 (en) * 2003-03-19 2005-11-08 Promos Technologies Inc. Nonvolatile memories and methods of fabrication
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6737700B1 (en) * 2003-05-13 2004-05-18 Powerchip Semiconductor Corp. Non-volatile memory cell structure and method for manufacturing thereof
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
KR100559994B1 (ko) 2003-08-08 2006-03-13 동부아남반도체 주식회사 측벽 방식을 이용한 플래시 메모리의 플로팅 게이트 형성방법
US7060627B2 (en) * 2003-09-09 2006-06-13 Tower Semiconductor Ltd. Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays
KR100526476B1 (ko) * 2003-12-31 2005-11-08 동부아남반도체 주식회사 스플릿 게이트형 플래쉬 메모리 소자의제조방법
US6852584B1 (en) * 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US8217450B1 (en) 2004-02-03 2012-07-10 GlobalFoundries, Inc. Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a fin
KR100585146B1 (ko) * 2004-06-15 2006-05-30 삼성전자주식회사 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조 방법
US7259420B2 (en) * 2004-07-28 2007-08-21 International Business Machines Corporation Multiple-gate device with floating back gate
US7145802B2 (en) * 2004-08-31 2006-12-05 Skymedi Corporation Programming and manufacturing method for split gate memory cell
US7459772B2 (en) * 2004-09-29 2008-12-02 Actel Corporation Face-to-face bonded I/O circuit die and functional logic circuit die system
US7087952B2 (en) * 2004-11-01 2006-08-08 International Business Machines Corporation Dual function FinFET, finmemory and method of manufacture
KR100614644B1 (ko) * 2004-12-30 2006-08-22 삼성전자주식회사 비휘발성 기억소자, 그 제조방법 및 동작 방법
KR100683389B1 (ko) * 2005-09-20 2007-02-15 동부일렉트로닉스 주식회사 플래시 메모리의 셀 트랜지스터 및 그 제조 방법
US20080119022A1 (en) * 2006-11-22 2008-05-22 Atmel Corporation Method of making eeprom transistors
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
KR20100080243A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
WO2010087854A1 (en) * 2009-01-30 2010-08-05 Hewlett-Packard Development Company, L.P. Memristive transistor memory
CN102104044B (zh) * 2009-12-17 2013-02-27 中芯国际集成电路制造(上海)有限公司 分离栅快闪存储器及其制造方法
US9437603B2 (en) * 2014-10-10 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wing-type projection between neighboring access transistors in memory devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222175A (ja) * 1985-03-01 1986-10-02 Fujitsu Ltd 半導体記憶装置の製造方法
JPH06105786B2 (ja) * 1985-08-20 1994-12-21 セイコーエプソン株式会社 不揮発性メモリ−
JPS62136880A (ja) * 1985-12-11 1987-06-19 Fujitsu Ltd 半導体記憶装置及びその製造方法
IT1191566B (it) * 1986-06-27 1988-03-23 Sgs Microelettronica Spa Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
JPH01248670A (ja) * 1988-03-30 1989-10-04 Toshiba Corp 不揮発性半導体記憶装置ならびにその動作方法および製造方法
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5020030A (en) * 1988-10-31 1991-05-28 Huber Robert J Nonvolatile SNOS memory cell with induced capacitor
US5051793A (en) * 1989-03-27 1991-09-24 Ict International Cmos Technology, Inc. Coplanar flash EPROM cell and method of making same
JP2864023B2 (ja) * 1989-05-30 1999-03-03 セイコーインスツルメンツ株式会社 半導体装置の製造方法
KR940006094B1 (ko) * 1989-08-17 1994-07-06 삼성전자 주식회사 불휘발성 반도체 기억장치 및 그 제조방법
US5153854A (en) * 1989-08-18 1992-10-06 Motorola, Inc. EEPROM memory system having selectable programming voltage for low power readability
JP2598523B2 (ja) * 1989-09-20 1997-04-09 三星電子株式會社 不揮発性の半導体記憶装置及びその製造方法
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
US5115288A (en) * 1990-06-28 1992-05-19 National Semiconductor Corporation Split-gate EPROM cell using polysilicon spacers
US5422504A (en) * 1994-05-02 1995-06-06 Motorola Inc. EEPROM memory device having a sidewall spacer floating gate electrode and process
JP3133667B2 (ja) * 1995-02-23 2001-02-13 三洋電機株式会社 スプリットゲート型トランジスタ、スプリットゲート型トランジスタの製造方法、不揮発性半導体メモリ
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell

Also Published As

Publication number Publication date
TW232097B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-10-11
US6107141A (en) 2000-08-22
EP0667038A1 (en) 1995-08-16
KR940704063A (ko) 1994-12-12
JPH06204495A (ja) 1994-07-22
WO1994010706A1 (en) 1994-05-11
US5910912A (en) 1999-06-08

Similar Documents

Publication Publication Date Title
JP2662173B2 (ja) 電気的に消去可能なプログラム可能読み取り専用フラッシュ・メモリ及びその形成方法
JP3512976B2 (ja) 不揮発性半導体記憶装置およびその製造方法
KR0121783B1 (ko) 플래쉬메모리 및 그의 제조방법
JP2921653B2 (ja) トレンチ・メモリ構造及びこれの製造方法
US5108939A (en) Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
US6222227B1 (en) Memory cell with self-aligned floating gate and separate select gate, and fabrication process
JP3785003B2 (ja) 不揮発性半導体記憶装置の製造方法
KR0150048B1 (ko) 플래쉬 이이피롬 셀 및 그 제조방법
US6562681B2 (en) Nonvolatile memories with floating gate spacers, and methods of fabrication
KR100239459B1 (ko) 반도체 메모리 소자 및 그 제조방법
JP4027446B2 (ja) 不揮発性メモリ製造方法
US7018897B2 (en) Self aligned method of forming a semiconductor memory array of floating gate memory cells with control gate spacers
US5821143A (en) Fabrication methods for nonvolatile memory devices including extended sidewall electrode
US6184554B1 (en) Memory cell with self-aligned floating gate and separate select gate, and fabrication process
KR100454135B1 (ko) 비휘발성 기억소자의 형성방법
US6809372B2 (en) Flash memory structure using sidewall floating gate
JP3442596B2 (ja) 半導体装置の製造方法
KR100525005B1 (ko) 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조방법
JPH10107230A (ja) 半導体装置およびその製造方法
KR20010003086A (ko) 플로팅 게이트 형성 방법
JP2000286350A (ja) 不揮発性半導体記憶装置およびその製造方法
KR0152496B1 (ko) 이이피롬 셀, 집적회로 이이피롬 이중 게이트 전계효과 트랜지스터 형성 방법 및 이이피롬 메모리 어레이 형성 방법
KR100376864B1 (ko) 반도체장치의 비휘발성 메모리소자 및 그 제조방법
JP3483460B2 (ja) 半導体記憶装置の製造方法
KR100262000B1 (ko) 반도체장치의 게이트 플래쉬 셀 및 그 제조방법