JP2657588B2 - 絶縁ゲイト型半導体装置およびその作製方法 - Google Patents

絶縁ゲイト型半導体装置およびその作製方法

Info

Publication number
JP2657588B2
JP2657588B2 JP3069561A JP6956191A JP2657588B2 JP 2657588 B2 JP2657588 B2 JP 2657588B2 JP 3069561 A JP3069561 A JP 3069561A JP 6956191 A JP6956191 A JP 6956191A JP 2657588 B2 JP2657588 B2 JP 2657588B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor substrate
film
trapezoidal
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3069561A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0685247A (ja
Inventor
舜平 山崎
保彦 竹村
法彦 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP3069561A priority Critical patent/JP2657588B2/ja
Priority to KR1019910025933A priority patent/KR950011020B1/ko
Priority to TW081100008A priority patent/TW237556B/zh
Priority to US07/819,964 priority patent/US5319231A/en
Publication of JPH0685247A publication Critical patent/JPH0685247A/ja
Application granted granted Critical
Publication of JP2657588B2 publication Critical patent/JP2657588B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP3069561A 1991-01-11 1991-01-11 絶縁ゲイト型半導体装置およびその作製方法 Expired - Fee Related JP2657588B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3069561A JP2657588B2 (ja) 1991-01-11 1991-01-11 絶縁ゲイト型半導体装置およびその作製方法
KR1019910025933A KR950011020B1 (ko) 1991-01-11 1991-12-31 절연 게이트형 반도체 장치 및 그 제작방법
TW081100008A TW237556B (OSRAM) 1991-01-11 1992-01-03
US07/819,964 US5319231A (en) 1991-01-11 1992-01-13 Insulated gate semiconductor device having an elevated plateau like portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3069561A JP2657588B2 (ja) 1991-01-11 1991-01-11 絶縁ゲイト型半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH0685247A JPH0685247A (ja) 1994-03-25
JP2657588B2 true JP2657588B2 (ja) 1997-09-24

Family

ID=13406296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3069561A Expired - Fee Related JP2657588B2 (ja) 1991-01-11 1991-01-11 絶縁ゲイト型半導体装置およびその作製方法

Country Status (4)

Country Link
US (1) US5319231A (OSRAM)
JP (1) JP2657588B2 (OSRAM)
KR (1) KR950011020B1 (OSRAM)
TW (1) TW237556B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598021A (en) * 1995-01-18 1997-01-28 Lsi Logic Corporation MOS structure with hot carrier reduction
JPH09321239A (ja) * 1996-05-30 1997-12-12 Hitachi Ltd 半導体集積回路装置の製造方法
US5814861A (en) * 1996-10-17 1998-09-29 Mitsubishi Semiconductor America, Inc. Symmetrical vertical lightly doped drain transistor and method of forming the same
US5834810A (en) * 1996-10-17 1998-11-10 Mitsubishi Semiconductor America, Inc. Asymmetrical vertical lightly doped drain transistor and method of forming the same
JPH10284723A (ja) * 1997-04-01 1998-10-23 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6759315B1 (en) * 1999-01-04 2004-07-06 International Business Machines Corporation Method for selective trimming of gate structures and apparatus formed thereby
JP2005116891A (ja) * 2003-10-09 2005-04-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197531B1 (en) * 1985-04-08 1993-07-28 Hitachi, Ltd. Thin film transistor formed on insulating substrate
JPH0656855B2 (ja) * 1985-05-08 1994-07-27 株式会社東芝 絶縁ゲ−ト型電界効果トランジスタ
JPS62217665A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd 電界効果トランジスタ
JP2576506B2 (ja) * 1987-05-27 1997-01-29 日本電気株式会社 Ｍｏｓ半導体装置
JPS6449266A (en) * 1987-08-20 1989-02-23 Matsushita Electronics Corp Transistor
JPH02188967A (ja) * 1989-01-18 1990-07-25 Nissan Motor Co Ltd 半導体装置
IT1235693B (it) * 1989-05-02 1992-09-21 Sgs Thomson Microelectronics Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.
JP3039967B2 (ja) * 1990-08-03 2000-05-08 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
US5319231A (en) 1994-06-07
JPH0685247A (ja) 1994-03-25
KR950011020B1 (ko) 1995-09-27
TW237556B (OSRAM) 1995-01-01

Similar Documents

Publication Publication Date Title
US5371026A (en) Method for fabricating paired MOS transistors having a current-gain differential
US6468843B2 (en) MIS semiconductor device having an LDD structure and a manufacturing method therefor
US6358783B1 (en) Semiconductor device and method of manufacturing the same
US5682052A (en) Method for forming isolated intra-polycrystalline silicon structure
JP2657588B2 (ja) 絶縁ゲイト型半導体装置およびその作製方法
EP0291951A2 (en) A semiconductor field effect transistor using single crystalline silicon carbide as a gate insulating layer
JP2010177690A (ja) 電気的にプログラムされたソース／ドレイン直列抵抗を有するｍｏｓトランジスタ
KR950001950B1 (ko) 집적회로내의 mos전계효과 트랜지스터 제조방법
US6410410B1 (en) Method of forming lightly doped regions in a semiconductor device
US4948744A (en) Process of fabricating a MISFET
JP2881267B2 (ja) 半導体装置およびその作製方法
US6060767A (en) Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof
JPH05243262A (ja) 半導体装置の製造方法
KR100499954B1 (ko) 반도체 소자의 전계 효과 트랜지스터 제조 방법
US6521517B1 (en) Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer
JPS6153868B2 (OSRAM)
KR100273323B1 (ko) 반도체소자 및 그 제조방법
KR100357299B1 (ko) 반도체소자의트랜지스터제조방법
KR100376874B1 (ko) 반도체장치의트랜지스터제조방법
KR100266635B1 (ko) 반도체산화막형성방법
CA1168765A (en) Method for making short channel transistor devices
KR19980058438A (ko) 반도체 소자의 실리사이드 형성 방법
JPH05226647A (ja) 半導体集積回路装置の製造方法
KR950009796B1 (ko) 절연게이트형 전계효과 트랜지스터 및 그의 형성방법
JPS6229165A (ja) 縦形半導体装置の製造方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090606

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090606

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090606

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100606

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100606

Year of fee payment: 13

LAPS Cancellation because of no payment of annual fees