JP2565617B2 - ウエハから材料を除去するシステム - Google Patents

ウエハから材料を除去するシステム

Info

Publication number
JP2565617B2
JP2565617B2 JP4112756A JP11275692A JP2565617B2 JP 2565617 B2 JP2565617 B2 JP 2565617B2 JP 4112756 A JP4112756 A JP 4112756A JP 11275692 A JP11275692 A JP 11275692A JP 2565617 B2 JP2565617 B2 JP 2565617B2
Authority
JP
Japan
Prior art keywords
wafer
thickness profile
silicon
plasma
profile data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4112756A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05160074A (ja
Inventor
チャールス・ビー・ザロウィン
エル・ディー・ボリンガー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EICHI II HOORUDEINGUSU Inc DEII BII EE HYUUZU EREKUTORONIKUSU
Original Assignee
EICHI II HOORUDEINGUSU Inc DEII BII EE HYUUZU EREKUTORONIKUSU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EICHI II HOORUDEINGUSU Inc DEII BII EE HYUUZU EREKUTORONIKUSU filed Critical EICHI II HOORUDEINGUSU Inc DEII BII EE HYUUZU EREKUTORONIKUSU
Publication of JPH05160074A publication Critical patent/JPH05160074A/ja
Application granted granted Critical
Publication of JP2565617B2 publication Critical patent/JP2565617B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP4112756A 1991-05-07 1992-05-01 ウエハから材料を除去するシステム Expired - Lifetime JP2565617B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US696897 1991-05-07
US07/696,897 US5254830A (en) 1991-05-07 1991-05-07 System for removing material from semiconductor wafers using a contained plasma

Publications (2)

Publication Number Publication Date
JPH05160074A JPH05160074A (ja) 1993-06-25
JP2565617B2 true JP2565617B2 (ja) 1996-12-18

Family

ID=24798980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4112756A Expired - Lifetime JP2565617B2 (ja) 1991-05-07 1992-05-01 ウエハから材料を除去するシステム

Country Status (7)

Country Link
US (1) US5254830A (2)
EP (1) EP0514046B1 (2)
JP (1) JP2565617B2 (2)
KR (1) KR960010336B1 (2)
DE (1) DE69228020T2 (2)
IL (1) IL101474A (2)
TW (1) TW198127B (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085648A (ja) * 1999-07-15 2001-03-30 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法および貼り合わせウエーハ
JP2001345435A (ja) * 2000-03-29 2001-12-14 Shin Etsu Handotai Co Ltd シリコンウェーハ及び貼り合わせウェーハの製造方法、並びにその貼り合わせウェーハ
JP2005033187A (ja) * 2003-06-20 2005-02-03 Tokyo Electron Ltd 処理方法及び処理システム

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282921A (en) * 1992-06-16 1994-02-01 Hughes Aircraft Company Apparatus and method for optimally scanning a two-dimensional surface of one or more objects
JPH06140365A (ja) * 1992-10-23 1994-05-20 Shin Etsu Handotai Co Ltd Ｓｏｉ基板におけるｓｏｉ膜厚均一化方法
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
US5473433A (en) * 1993-12-07 1995-12-05 At&T Corp. Method of high yield manufacture of VLSI type integrated circuit devices by determining critical surface characteristics of mounting films
IL112148A0 (en) * 1994-01-13 1995-03-15 Hughes Aircraft Co System for depositing material on a substrate
IL112511A0 (en) * 1994-02-18 1995-05-26 Hughes Aircraft Co System for improving the total thickness variation of a wafer
US5795493A (en) * 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
US5688415A (en) * 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
US5930744A (en) * 1995-09-15 1999-07-27 Defelsko Corporation Coating thickness gauge
KR20010029456A (ko) * 1996-09-04 2001-04-06 시본드 엘.엘.씨 본딩된 반도체 기판에 대한 평탄화 공정
JP3612158B2 (ja) * 1996-11-18 2005-01-19 スピードファム株式会社 プラズマエッチング方法及びその装置
JPH10223497A (ja) * 1997-01-31 1998-08-21 Shin Etsu Handotai Co Ltd 貼り合わせ基板の作製方法
JP3917703B2 (ja) * 1997-02-18 2007-05-23 スピードファム株式会社 プラズマエッチング方法及びその装置
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
JP3327180B2 (ja) * 1997-08-29 2002-09-24 信越半導体株式会社 Ｓｏｉ層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
JP3606422B2 (ja) * 1998-03-18 2005-01-05 株式会社荏原製作所 ガスポリッシング方法及びポリッシング装置
US6069366A (en) * 1998-03-30 2000-05-30 Advanced Micro Devices, Inc. Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit
JPH11302878A (ja) * 1998-04-21 1999-11-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
JP3456143B2 (ja) 1998-05-01 2003-10-14 信越半導体株式会社 積層材料および光機能素子
JP3635200B2 (ja) 1998-06-04 2005-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP3358550B2 (ja) 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) * 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US6294395B1 (en) * 1999-08-26 2001-09-25 Advanced Micro Devices, Inc. Back side reactive ion etch
EP1303866B1 (en) * 2000-07-10 2009-12-09 TEL Epion Inc. System and method for improving thin films by gas cluster ion be am processing
US6558963B1 (en) * 2000-07-25 2003-05-06 Advanced Micro Devices, Inc. Method and system for controlling the plasma treatment of a titanium nitride layer formed by a chemical vapor deposition process
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
JP2002231700A (ja) * 2001-02-05 2002-08-16 Speedfam Co Ltd ナノトポグラフィ除去方法
JP4460788B2 (ja) * 2001-02-23 2010-05-12 スピードファム株式会社 局所エッチング方法
US6896949B1 (en) 2001-03-15 2005-05-24 Bookham (Us) Inc. Wafer scale production of optical elements
JP3975321B2 (ja) * 2001-04-20 2007-09-12 信越化学工業株式会社 フォトマスク用シリカガラス系基板及びフォトマスク用シリカガラス系基板の平坦化方法
JP3627805B2 (ja) * 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
FR2830682B1 (fr) * 2001-10-04 2004-07-09 Centre Nat Etd Spatiales Procede et dispositif d'amincissement d'une plaquette de circuit integre
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US6500681B1 (en) * 2002-01-11 2002-12-31 Advanced Micro Devices, Inc. Run-to-run etch control by feeding forward measured metal thickness
JP4020739B2 (ja) * 2002-09-27 2007-12-12 株式会社荏原製作所 ポリッシング装置
JP2004128079A (ja) * 2002-09-30 2004-04-22 Speedfam Co Ltd Ｓｏｉウェハーのための多段局所ドライエッチング方法
JP2004235478A (ja) * 2003-01-30 2004-08-19 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US6759341B1 (en) 2003-04-09 2004-07-06 Tru-Si Technologies, Inc. Wafering method comprising a plasma etch with a gas emitting wafer holder
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
DE102004054566B4 (de) * 2004-11-11 2008-04-30 Siltronic Ag Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit
TWI237915B (en) * 2004-12-24 2005-08-11 Cleavage Entpr Co Ltd Manufacturing method of light-emitting diode
US7279657B2 (en) * 2005-06-13 2007-10-09 Applied Materials, Inc. Scanned rapid thermal processing with feed forward control
JP5168788B2 (ja) 2006-01-23 2013-03-27 信越半導体株式会社 Ｓｏｉウエーハの製造方法
DE102006023946A1 (de) * 2006-05-17 2007-11-22 Infineon Technologies Ag Verfahren und Vorrichtung zur Reduktion einer Verformung eines Wafers
JP5415676B2 (ja) * 2007-05-30 2014-02-12 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
EP3234987B1 (en) * 2014-12-19 2020-09-23 GlobalWafers Co., Ltd. Systems and methods for performing epitaxial smoothing processes on semiconductor structures
GB2623533A (en) * 2022-10-18 2024-04-24 Spts Technologies Ltd Apparatus and method for reducing substrate thickness and surface roughness

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668366A (en) 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550242A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device for batch treatment of workpieces
JPS5886717A (ja) * 1981-11-18 1983-05-24 Nec Corp 単結晶シリコン膜形成法
JPS58138030A (ja) * 1982-02-10 1983-08-16 Matsushita Electric Ind Co Ltd イオンビ−ムエツチング装置
US4618262A (en) * 1984-04-13 1986-10-21 Applied Materials, Inc. Laser interferometer system and method for monitoring and controlling IC processing
DE3516078A1 (de) * 1985-05-04 1986-11-06 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur glimmentladungsaktivierten reaktiven abscheidung von elektrisch leitendem material aus einer gasphase
DE3600346A1 (de) * 1986-01-08 1987-07-09 Fraunhofer Ges Forschung Verfahren zur abbildenden laserinterferometrie und laserinterferometer zur durchfuehrung des verfahrens
JPS63204726A (ja) * 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US4758304A (en) * 1987-03-20 1988-07-19 Mcneil John R Method and apparatus for ion etching and deposition
JPH0834198B2 (ja) * 1990-11-28 1996-03-29 信越半導体株式会社 Ｓｏｉ基板における単結晶薄膜層の膜厚制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668366A (en) 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085648A (ja) * 1999-07-15 2001-03-30 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法および貼り合わせウエーハ
JP2001345435A (ja) * 2000-03-29 2001-12-14 Shin Etsu Handotai Co Ltd シリコンウェーハ及び貼り合わせウェーハの製造方法、並びにその貼り合わせウェーハ
JP2005033187A (ja) * 2003-06-20 2005-02-03 Tokyo Electron Ltd 処理方法及び処理システム

Also Published As

Publication number Publication date
EP0514046A1 (en) 1992-11-19
TW198127B (2) 1993-01-11
US5254830A (en) 1993-10-19
DE69228020T2 (de) 1999-05-27
IL101474A (en) 1995-11-27
KR960010336B1 (ko) 1996-07-30
DE69228020D1 (de) 1999-02-11
IL101474A0 (en) 1992-12-30
EP0514046B1 (en) 1998-12-30
JPH05160074A (ja) 1993-06-25
KR920022374A (ko) 1992-12-19

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