JP2025507250A5 - - Google Patents
Info
- Publication number
- JP2025507250A5 JP2025507250A5 JP2024541671A JP2024541671A JP2025507250A5 JP 2025507250 A5 JP2025507250 A5 JP 2025507250A5 JP 2024541671 A JP2024541671 A JP 2024541671A JP 2024541671 A JP2024541671 A JP 2024541671A JP 2025507250 A5 JP2025507250 A5 JP 2025507250A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon film
- glassy carbon
- manufacturing process
- thin layer
- composite structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2201443 | 2022-02-18 | ||
| FR2201443A FR3132976B1 (fr) | 2022-02-18 | 2022-02-18 | Structure composite et procede de fabrication associe |
| PCT/EP2023/052346 WO2023156193A1 (fr) | 2022-02-18 | 2023-01-31 | Structure composite et procede de fabrication associe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025507250A JP2025507250A (ja) | 2025-03-18 |
| JP2025507250A5 true JP2025507250A5 (https=) | 2025-12-10 |
Family
ID=81580657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024541671A Pending JP2025507250A (ja) | 2022-02-18 | 2023-01-31 | 複合構造および関連する製造プロセス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250140602A1 (https=) |
| EP (1) | EP4479994A1 (https=) |
| JP (1) | JP2025507250A (https=) |
| KR (1) | KR20240154013A (https=) |
| CN (1) | CN118696397A (https=) |
| FR (1) | FR3132976B1 (https=) |
| TW (1) | TW202349454A (https=) |
| WO (1) | WO2023156193A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6371143B2 (ja) * | 2014-07-08 | 2018-08-08 | イビデン株式会社 | SiCウェハの製造方法、SiC半導体の製造方法及び黒鉛炭化珪素複合基板 |
| JP6371142B2 (ja) * | 2014-07-08 | 2018-08-08 | イビデン株式会社 | SiCウェハの製造方法、SiC半導体の製造方法及び炭化珪素複合基板 |
| US20180158672A1 (en) * | 2015-06-25 | 2018-06-07 | Tivra Corporation | Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates |
-
2022
- 2022-02-18 FR FR2201443A patent/FR3132976B1/fr active Active
-
2023
- 2023-01-31 US US18/837,681 patent/US20250140602A1/en active Pending
- 2023-01-31 WO PCT/EP2023/052346 patent/WO2023156193A1/fr not_active Ceased
- 2023-01-31 JP JP2024541671A patent/JP2025507250A/ja active Pending
- 2023-01-31 EP EP23702162.1A patent/EP4479994A1/fr active Pending
- 2023-01-31 CN CN202380021538.8A patent/CN118696397A/zh active Pending
- 2023-01-31 KR KR1020247031068A patent/KR20240154013A/ko active Pending
- 2023-02-07 TW TW112104269A patent/TW202349454A/zh unknown
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