Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
  • H10P90/1906—Preparing SOI wafers
  • H10P90/1914—Preparing SOI wafers using bonding
  • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/36—Carbides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P10/00—Bonding of wafers, substrates or parts of devices
  • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
  • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Definitions

• the present invention is aimed at the field of microelectronics and semiconductors.
• the invention relates to a substrate made of polycrystalline material comprising a surface film of vitreous carbon, and particularly suitable for receiving a thin layer transferred from a donor substrate.
• the invention also relates to a method of manufacturing said support substrate and the composite structure resulting from the transfer of the thin layer onto the support substrate.
• SiC Silicon carbide
• SiC silicon carbide
• c-SiC monocrystalline SiC
• p-SiC polycrystalline SiC
• a well-known thin film transfer solution is the Smart Cut® process, based on an implantation of light ions in a donor substrate (c-SiC) and on an assembly, by direct bonding, at a bonding interface. between the donor substrate and a support substrate (for example p-SiC).
• p-SiC substrates due to the hardness of the material and the polycrystalline structure, are difficult to polish and generally have residual surface roughness which complicates an assembly by direct bonding. Indeed, direct bonding does not use adhesive substances but involves molecular bonds between the surfaces of the substrates brought into contact: such bonding therefore requires excellent flatness as well as very low surface roughness and defects.
• composite structures based on silicon carbide may also be affected.
• Mention may be made, for example, of a composite structure comprising a thin layer of galium nitride (GaN) and a polycrystalline support substrate, for example of aluminum nitride (AlN).
• GaN galium nitride
• AlN aluminum nitride
• the present invention proposes a solution, an alternative to the solutions of the state of the art, which favors obtaining a low surface roughness of the support substrate and favors its electrical and thermal properties.
• the invention relates in particular to an initial polycrystalline substrate comprising a surface film of vitreous carbon, particularly suitable for receiving a useful layer transferred from a donor substrate.
• the invention also relates to a method of manufacturing said support substrate and the composite structure resulting from the transfer of the thin layer onto the support substrate.
• the present invention relates to a process for manufacturing a composite structure comprising a thin layer of a first monocrystalline material placed on a support substrate, the manufacturing process comprising the following steps: a) the supply of an initial substrate made of a second polycrystalline material, b) the deposition by centrifugal coating, at least on a front face of the initial substrate, of a layer of polymer resin comprising carbon-carbon bonds preformed in three dimensions, c) the application of a first annealing at a temperature of between 120° C. and 180° C.
• the invention also relates to a composite structure comprising a thin layer of a first monocrystalline material placed on a support substrate, said support substrate including: - an initial substrate made of a second polycrystalline material, - a vitreous carbon film, in contact with the front surface of the initial substrate.
• FIGS. 1a, 1b, 1c and 1d present steps of a process for manufacturing a support substrate, in accordance with the invention
• FIGS. 4a, 4b, 4c, 4c′, 4d show steps in the process for manufacturing a composite structure, in accordance with the invention.
• Some figures are schematic representations which, for the purpose of readability, are not to scale.
• the layer thicknesses along the z axis are not to scale with respect to the lateral dimensions along the x and y axes.
• the invention relates to a method for manufacturing a composite structure 100 comprising a thin layer 10 of a first monocrystalline material placed on a support substrate 20, which is at least partly composed of a second polycrystalline material ( ).
• the targeted composite structure 100 allows vertical electrical conduction between the thin layer 10 and the support substrate 20, in particular for power electronics applications.
• the first monocrystalline material can be chosen from silicon carbide (c-SiC), galium nitride (c-GaN), silicon, silicon-germanium, germanium, III-V compounds, or others semiconductor materials, or even piezoelectric materials such as lithium tantalate, lithium niobate, etc....
• the second polycrystalline material can be chosen from silicon carbide (p-SiC), nitride d aluminum (p-AlN), silicon (p-Si), or any material stated above with reference to the first material but having a polycrystalline structure or comprising a surface polycrystalline layer.
• the first materials stated may be associated with one or the other of the second materials above, provided of course that this is of interest for the final application.
• the composite structure 100 will be formed from a first and a second material having similar coefficients of thermal expansion.
• the manufacturing method firstly comprises a step a) of supplying an initial substrate 2 in polycrystalline silicon carbide (p-SiC), having a front face 2a and a rear face 2b ( ).
• the initial substrate 2 can be produced by a conventional technique such as sintering or chemical vapor deposition.
• the initial substrate 2 is preferably in the form of a wafer with a diameter of 100mm, 150mm, 200mm or even 300mm and a thickness typically comprised between 300 and 800 microns.
• the surface condition of the front face 2a of the initial substrate 2 is preferably chosen so that the peak-to-valley roughness (hereinafter called “PV roughness” in reference to “peak-to-valley” according to English terminology -Saxon) is less than or equal to a few micrometers, typically less than or equal to 2 ⁇ m, 1 ⁇ m, 500 nm, 100 nm, or even 50 nm.
• PV roughness peak-to-valley roughness
• roughness is measured by atomic force microscopy (AFM) over a surface area (scan area or "scan") less than or equal to 30 ⁇ m x 30 ⁇ m.
• the measured surface area may for example extend over 5 ⁇ m x 5 ⁇ m, 10 ⁇ m x 10 ⁇ m, 20 ⁇ m x 20 ⁇ m or 30 ⁇ m x 30 ⁇ m.
• An example of the surface state of an initial substrate 2 is given in . Although the RMS roughness remains less than 1 nm, a PV roughness is observed which can exceed 30 nm due to the presence of scratches on the surface. Such a surface state is likely to generate physical defects (holes) at the level of the future interface between the substrate and the thin layer of the composite structure 100: this leads to degrading the quality and integrity of the thin layer transferred thus as the electrical conductivity of the interface.
• the initial substrate 2 can have a surface roughness PV of up to a few micrometers, which greatly relaxes the manufacturing or supply constraints of the initial substrate 2.
• the surface condition of the rear face 2b of the initial substrate 2 is not specified here. It may be similar to that of the front face 2a or more degraded, provided that it does not globally affect the curvature or the quality (defectiveness) of the initial substrate 2.
• the manufacturing method according to the invention provides for a step b) comprising deposition by spin coating, at least on the front face 2a of the initial substrate 2, of a layer of resin polymer 3 ( ).
• a layer of resin polymer 3 ( ).
• An important feature of this layer is that it has preformed three-dimensional (3D) carbon-carbon (CC) bonds.
• the carbon polymer chains which have sequences of CC bonds, are randomly dispersed in a solvent: they thus have a more or less random 3D structure. The more these chains are randomly dispersed in 3D, the less we will promote graphitization and the closer we will come to a vitreous state, during crosslinking.
• a layer of polymer resin 3 leading to the highest possible amorphous/crystalline ratio is favored, after crosslinking, to obtain a vitreous carbon film 30, at the end of a subsequent step d) of the process .
• the polymer resin can be formed from coal tar, phenol formaldehyde, polyfurfuryl alcohol, polyvinyl alcohol, polyacrylonitrile, polyvinylidene chloride, and/or polystyrene, etc.
• photosensitive resins usually implemented for photolithography steps in the field of microelectronics, can be used, such as commercial products:
• AZ-5214, AZ-4330, AZ-P4620 registered trademarks (based on 1-methoxy-2-propanol acetate, diazonaphthoquinonesulfonic esters, 2-methoxy-1-propanol acetate, Cresol novolak resin),
• Epoxy resins such as for example the Epoxy Novolac EPON product (registered trademark) proposed to cover and protect different surfaces in various fields (aeronautics, marine, automobile, construction, etc.), can also be implemented at the step b) of the process according to the invention.
• step b) The spreading by centrifugation carried out in step b) requires that the polymer resin solution is in a viscous form.
• This mode of deposition is particularly advantageous because the viscous solution fills in the hollows (holes and scratches) present on the surface of the initial substrate 2 and therefore effectively flattens these microreliefs.
• the thickness of the layer of polymer resin 3 deposited in step b) can typically vary between a few hundred nanometers (for example 500 nm) and several microns (for example 3 to 5 ⁇ m).
• the manufacturing method then comprises a step c) consisting in the application of an anneal (called first anneal), having a plateau at a temperature between 120° C. and 180° C., to the initial substrate 2 provided with the layer of polymer resin 3 ( ).
• the stage can last between a few minutes (typically 30min) and a few hours (typically 2h).
• a gradual rise in temperature, namely between 1° C./min and 5° C./min, from room temperature to plateau is preferred, so as to gradually degas the layer of polymer resin 3 and to evacuate the solvent and the impurities initially present in the viscous solution.
• Intermediate stages may also be provided in the thermal cycle of the first anneal, depending on the nature of the polymer resin.
• the layer of polymer resin 3′ is crosslinked, therefore solidified against the front surface 2a of the initial substrate 2.
• the crosslinking is characterized by the formation of bonds between the carbon chains, which will result in the solidification of the 3' layer.
• the arrangement, in the 3′ crosslinked polymer resin layer, of the 3-dimensional polymer chains will influence the 3-dimensional orientation of the sp2-type bond chains, during the next step d) of the process.
• the manufacturing process comprises a step d) consisting of the application of a second anneal having a plateau at a temperature greater than 600° C., preferably greater than 700° C., under a neutral atmosphere, to transform the layer of resin cross-linked polymer 3' into a glassy carbon film 30 ( ).
• the bearing temperature can for example be 650° C., 750° C., 800° C. or even 850° C., or more.
• the temperature of this level may go up to approximately 1800° C., taking care to remain compatible with the nature of the second material making up the initial substrate 2.
• This second anneal causes carbonization of the 3′ crosslinked layer. It is essential that this carbonization gives rise to a glassy carbon structure, which presents carbon-carbon (C-C) atomic bonds of the sp2 type.
• the vitreous carbon structure can be characterized by Raman spectroscopy, with a particular band signature (G-band), or by ellipsometry, with a specific absorption signature as known in the literature.
• the glassy carbon film 30 advantageously has 100% sp2-type C-C atomic bonds; if inclusions of another phase are present in the film 30, it can be tolerated that the percentage of sp2 atomic bonds is greater than 95%, or preferably greater than 99%.
• the neutral atmosphere of the second annealing is typically based on argon and/or under vacuum (i.e. at a pressure lower than the atmosphere and up to a few mBar).
• the second annealing takes place with a rise in temperature that can range from 5°C/min, to 15°C/min, and up to 50°C/min, or even 100°C/min, from ambient temperature to at the landing.
• the duration of the stage can vary between a few minutes (for example 30min) and a few hours (for example 2h).
• the vitreous carbon film 30 typically has a thickness of between a few hundred nanometers (typically 500-600 nm) and a few micrometers (typically 1, 2, 3 or 4 ⁇ m). Preferably, the vitreous carbon film 30 has a thickness of the order of ten times the surface roughness PV of the initial substrate 2.
• the contraction in thickness can typically be between 70% and 95%.
• the carbon ratio that is to say the ratio between the mass of the glassy carbon film 30 and the initial mass of the spread layer of polymer resin 3, must be at least 5%, preferably greater than 50%.
• the initial substrate 2 provided with the vitreous carbon film 30 corresponds to the support substrate 20 according to the present invention.
• a root mean square roughness less than or equal to 0, 8nm RMS and a peak-to-valley roughness less than or equal to 7nm PV can be obtained, starting from the initial substrate roughnesses 2 indicated in .
• the roughnesses are here again measured by atomic force microscopy on a surface area less than or equal to 30 ⁇ m ⁇ 30 ⁇ m.
• the surface condition is significantly improved compared to the surface 2a of the initial substrate 2; a strong resorption of scratches and other hollow defects is observed and a roughness typically less than or equal to 1 nm RMS and 10 nm PV. This surface condition is particularly favorable for assembly by direct bonding with very good interface quality.
• the manufacturing method according to the invention comprises, after step d), a step e) of mechanical and/or mechanical-chemical polishing of the vitreous carbon film 30, to adjust its thickness or to further improve its roughness of surface.
• the aim is for example an RMS roughness of less than 1 nm, or even 0.5 nm, and a PV roughness of less than 5 nm.
• the glassy carbon film 30 has excellent electrical conduction characteristics, with a resistivity typically less than 6.10 -3 ohm.cm.
• the mechanical, electrical and thermal properties of the vitreous carbon film 30 make the support substrate 20 an excellent candidate for the fabrication of a composite structure 100 by transferring a thin layer 10 of monocrystalline silicon carbide (c-SiC) onto said supporting substrate 20.
• c-SiC monocrystalline silicon carbide
• the manufacturing method in accordance with the invention may thus comprise a step f) of transferring a thin layer 10 of c-SiC onto the vitreous carbon film 30.
• step f) of the process involves implantation of light species according to the principle of the Smart Cut® process.
• a donor substrate 1 in monocrystalline silicon carbide, from which the thin layer 10 will come is provided ( ).
• the donor substrate 1 is preferably in the form of a wafer with a diameter of 100mm, 150mm, 200mm or even 300mm (identical to or very close to that of the support substrate 20) and with a thickness typically comprised between 300 ⁇ m and 800 ⁇ m. It has a front face 1a and a rear face 1b.
• the surface roughness of the front face 1a is advantageously chosen to be less than 1 nm RMS, or even less than 0.5 nm RMS, measured by atomic force microscopy (AFM) over a surface area of for example 20 ⁇ m ⁇ 20 ⁇ m.
• the donor substrate 1 can be of 4H or 6H polytype, and have an n or p type doping, depending on the requirements of the components which will be produced on and/or in the thin layer 10 of the composite structure 100.
• the donor substrate 1 intended to form a thin layer 10 of c-GaN may be formed from a base substrate of GaN, SiC, Si(111) or sapphire on which epitaxy of monocrystalline GaN will be carried out, according to conventional methods.
• a second phase f2) corresponds to the introduction of light species into the donor substrate 1 to form a buried fragile plane 11 delimiting, with a front face 1a of the donor substrate 1, the thin layer 10 to be transferred ( ).
• the light species are preferably hydrogen, helium or a co-implantation of these two species, and are implanted at a determined depth in the donor substrate 1, consistent with the thickness of the thin layer 10 targeted. These light species will form, around the determined depth, microcavities distributed in a thin layer parallel to the free surface 1a of the donor substrate 1, ie parallel to the plane (x,y) in the figures. This thin layer is called the buried fragile plane 11, for simplicity.
• the implantation energy of the light species is chosen so as to reach the determined depth.
• hydrogen ions will be implanted at an energy of between 10 keV and 250 keV, and at a dose of between 5E16/cm 2 and 1E17/cm 2 , to delimit a thin layer 10 having a thickness of the order of 100 nm at 1500nm.
• a protective layer may be deposited on the front face 1a of the donor substrate 1, prior to the ion implantation step. This protective layer can be composed of a material such as silicon oxide or silicon nitride for example. It is removed prior to the next phase.
• an intermediate layer 4 can be formed on the front face 1a of the donor substrate 1, before or after the second phase f2) of introducing the light species.
• This intermediate layer 4 can be made of a semiconductor material or a metallic material; for example, one can choose silicon, silicon carbide, silicon oxycarbide (SiOC), carbon, for example a vitreous or turbostratic carbon, tungsten, titanium, etc.
• the thickness of the intermediate layer 4 is advantageously limited, typically between a few nanometers and a few tens of nanometers.
• the implantation energy (and potentially the dose) of the light species will be adjusted when crossing this additional layer.
• care will be taken to form this layer by applying a thermal budget lower than the bubbling thermal budget, said bubbling thermal budget corresponding to the appearance of blisters on the surface of the donor substrate 1 due to growth and excessive pressurization of the microcavities in the buried fragile plane 11.
• Step f) of transfer then comprises a third phase f3) of assembly of the donor substrate 1, on the side of its front face 1a, on the support substrate 20, on the side of its first face 20a, by bonding by molecular adhesion, along a bonding interface 5 to form a bonded assembly 50 (FIGS. 4c, 4c').
• an additional layer can also be deposited on the side to be assembled of the support substrate 20 (namely on the glassy carbon layer 30), prior to the assembly phase f3); it can be chosen of the same nature or of a different nature from the intermediate layer 4 mentioned for the donor substrate 1.
• An intermediate or additional layer 4 can optionally be deposited only on one or the other of the two substrates 1,20 to assemble.
• the objective of the intermediate layer(s) is essentially to promote the bonding energy (especially in the range of temperatures below 1100°C), due to the formation of covalent bonds at more lower temperatures than in the case of a direct assembly without this (these) intermediate layer(s); another advantage of this (these) intermediate layer(s) may be to further improve the vertical electrical conduction of the bonding interface 5.
• the assembly phase f3) may comprise, prior to bringing the faces 1a, 20a to be assembled into contact, conventional sequences of chemical cleaning (for example, RCA cleaning), surface activation (for example, by oxygen or nitrogen plasma) or other surface preparations (such as cleaning by brushing (“scrubbing”)), likely to promote the quality of the bonding interface 5 (low defectivity, high adhesion energy).
• chemical cleaning for example, RCA cleaning
• surface activation for example, by oxygen or nitrogen plasma
• other surface preparations such as cleaning by brushing (“scrubbing”)
• a fourth phase f4) comprises the separation along the buried fragile plane 11, which leads to the transfer of the thin layer 10 onto the support substrate 20 ( ).
• the separation along the buried fragile plane 11 usually takes place by the application of a heat treatment to the bonded assembly 50, at a temperature between 800°C and 1200°C (in the case described of an assembly bonded 50 based on SiC).
• a heat treatment to the bonded assembly 50, at a temperature between 800°C and 1200°C (in the case described of an assembly bonded 50 based on SiC).
• this temperature strongly depends on the nature of the first and second materials involved in the bonded assembly 50, as is known to those skilled in the art, and will naturally be adjusted according to the materials chosen.
• Such a heat treatment induces the development of cavities and microcracks in the buried fragile plane 11, and their pressurization by the light species present in gaseous form, until the propagation of a fracture along said fragile plane 11.
• a mechanical stress can be applied to the bonded assembly 50 and in particular at the level of the buried fragile plane 11, so as to propagate or help to mechanically propagate the fracture leading to the separation.
• the composite structure 100 comprising the support substrate 20 and the thin monocrystalline layer 10 transferred, and on the other hand, the rest 1′ of the donor substrate.
• the level and type of doping of the thin layer 10 are defined by the choice of the properties of the donor substrate 1 or can be adjusted later via known techniques for doping semiconductor layers.
• the free surface 10a of the thin layer 10 is usually rough after separation: for example, it has a roughness of between 5 nm and 100 nm RMS (AFM, scan 20 ⁇ m ⁇ 20 ⁇ m).
• Cleaning and/or smoothing phases can be applied to restore a good surface state (typically, a roughness lower than a few Angstroms RMS, on a 20 ⁇ m x 20 ⁇ m scan by AFM).
• these phases may comprise a mechanical-chemical smoothing treatment of the free surface of the thin layer 10.
• a removal of between 50 nm and 300 nm makes it possible to effectively restore the surface condition of said layer 10.
• They may also comprise at least one heat treatment, for example at a temperature between 1300° C. and 1800° C. in the case of the composite structure 100 based on SiC.
• Such a heat treatment is applied to evacuate the residual light species from the thin layer 10 and to promote the rearrangement of its crystal lattice. It also makes it possible to reinforce the bonding interface 5.
• the heat treatment can also include or correspond to an epitaxy of silicon carbide on the thin layer 10.
• the support substrate 20, and in particular the vitreous carbon film 30, is perfectly compatible with the heat treatments potentially at very high temperatures applied during the development of the composite structure 100.
• transfer step f) can comprise a step of reconditioning the rest 1' of the donor substrate with a view to reuse as donor substrate 1 for a new composite structure 100.
• Mechanical and/or chemical treatments similar to those applied to the composite structure 100, can be implemented at the level of the front face 1'a of the remaining substrate 1'.
• the composite structure 100 obtained comprises a thin layer 10 of monocrystalline silicon carbide placed on the support substrate 20, said support substrate 20 including an initial substrate 2 of polycrystalline silicon carbide and a vitreous carbon film 30, in contact with the front surface 2a of the initial substrate 2.
• the composite structure 100 is described here in the case of a first material in c-SiC and a second material in p-SiC.
• the invention also relates to a composite structure 100 based on other pairs of first and second materials (stated non-exhaustively above), in particular a composite structure 100 comprising a thin c-GaN layer and an initial substrate 2 (included in the support substrate 20) in p-AlN.
• An intermediate layer 4 and/or an additional layer as mentioned in the method may optionally be interposed between the glassy carbon film 30 and the thin layer 10.
• the case of an intermediate layer 4 made of carbon is advantageous in that it does not add a separate material interface likely to increase the total vertical resistance and provides very good temperature resistance.
• the electrical conduction at the interface between the thin layer 10 and the intermediate layer 4 or the glassy carbon film 30 is advantageously less than or equal to 10 -4 ohm.cm 2 , or even less than 10 -5 ohm.cm 2 , or even even less than 10 -6 ohm.cm 2 .
• Such a composite structure 100 is extremely robust to heat treatments at high temperatures likely to be applied to manufacture components on and/or in said layer 20.
• the composite structure 100 according to the invention is particularly suitable for producing a (or more) high-voltage microelectronic component(s), such as for example Schottky diodes, MOSFET transistors, etc. It responds more generally to power microelectronic applications, by allowing excellent vertical electrical conduction, good thermal conductivity and by providing a useful layer of high quality monocrystalline material.

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• 2022
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