KR20240154013A - 복합 구조체 및 관련 제조 공정 - Google Patents

복합 구조체 및 관련 제조 공정 Download PDF

Info

Publication number
KR20240154013A
KR20240154013A KR1020247031068A KR20247031068A KR20240154013A KR 20240154013 A KR20240154013 A KR 20240154013A KR 1020247031068 A KR1020247031068 A KR 1020247031068A KR 20247031068 A KR20247031068 A KR 20247031068A KR 20240154013 A KR20240154013 A KR 20240154013A
Authority
KR
South Korea
Prior art keywords
composite structure
carbon film
glassy carbon
substrate
thin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247031068A
Other languages
English (en)
Korean (ko)
Inventor
지웰타츠 고댕
휴고 비아르드
Original Assignee
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20240154013A publication Critical patent/KR20240154013A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/02002
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • H10P90/1916Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • H01L21/185
    • H01L21/76254
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Ceramic Products (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Laminated Bodies (AREA)
KR1020247031068A 2022-02-18 2023-01-31 복합 구조체 및 관련 제조 공정 Pending KR20240154013A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FRFR2201443 2022-02-18
FR2201443A FR3132976B1 (fr) 2022-02-18 2022-02-18 Structure composite et procede de fabrication associe
PCT/EP2023/052346 WO2023156193A1 (fr) 2022-02-18 2023-01-31 Structure composite et procede de fabrication associe

Publications (1)

Publication Number Publication Date
KR20240154013A true KR20240154013A (ko) 2024-10-24

Family

ID=81580657

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247031068A Pending KR20240154013A (ko) 2022-02-18 2023-01-31 복합 구조체 및 관련 제조 공정

Country Status (8)

Country Link
US (1) US20250140602A1 (https=)
EP (1) EP4479994A1 (https=)
JP (1) JP2025507250A (https=)
KR (1) KR20240154013A (https=)
CN (1) CN118696397A (https=)
FR (1) FR3132976B1 (https=)
TW (1) TW202349454A (https=)
WO (1) WO2023156193A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6371143B2 (ja) * 2014-07-08 2018-08-08 イビデン株式会社 SiCウェハの製造方法、SiC半導体の製造方法及び黒鉛炭化珪素複合基板
JP6371142B2 (ja) * 2014-07-08 2018-08-08 イビデン株式会社 SiCウェハの製造方法、SiC半導体の製造方法及び炭化珪素複合基板
US20180158672A1 (en) * 2015-06-25 2018-06-07 Tivra Corporation Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates

Also Published As

Publication number Publication date
CN118696397A (zh) 2024-09-24
FR3132976A1 (fr) 2023-08-25
TW202349454A (zh) 2023-12-16
FR3132976B1 (fr) 2024-11-29
JP2025507250A (ja) 2025-03-18
US20250140602A1 (en) 2025-05-01
WO2023156193A1 (fr) 2023-08-24
EP4479994A1 (fr) 2024-12-25

Similar Documents

Publication Publication Date Title
TWI861252B (zh) 用於製作複合結構之方法,該複合結構包含一單晶SiC薄層在一結晶SiC載體底材上
JP7542053B2 (ja) 多結晶炭化ケイ素で作られたキャリア基板上に単結晶炭化ケイ素の薄層を含む複合構造を製造するためのプロセス
US20070141803A1 (en) Methods for making substrates and substrates formed therefrom
CN115088063B (zh) 用于制造包括位于由SiC制成的载体衬底上的由单晶SiC制成的薄层的复合结构的方法
JP7620646B2 (ja) 非常に高い温度に対応する剥離可能な仮基板、及び前記基板から加工層を移動させるプロセス
CN115023802A (zh) 包含在SiC制载体衬底上的单晶SiC制薄层的复合结构的制造方法
US20240379351A1 (en) Method for fabricating a polycrystalline silicon carbide carrier substrate
CN114730699A (zh) 制造包括位于由SiC制成的载体基板上的单晶SiC薄层的复合结构的方法
TWI907572B (zh) 製作含凝聚物之交界區之半導體結構之方法
EP4085478B1 (fr) Procede de fabrication d'une structure composite comprenant une couche mince monocristalline sur un substrat support
KR20240154013A (ko) 복합 구조체 및 관련 제조 공정
US20240395603A1 (en) Composite structure comprising a useful monocrystalline sic layer on a polycrystalline sic carrier substrate and method for manufacturing said structure
WO2025186046A1 (fr) Procédé de préparation d'un substrat support en matériau polycristallin et procédé de fabrication d'une structure composite incluant ledit substrat support
WO2025186045A1 (fr) Procédé de préparation d'un substrat support en matériau polycristallin et procédé de fabrication d'une structure composite incluant ledit substrat support
CN118302839A (zh) 制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法
JP2024537777A (ja) 多結晶SiCでできた担体基板上に単結晶SiCでできた薄層を含む複合構造を製作するための方法
TW202301554A (zh) 用於製作碳化矽基半導體結構及中間複合結構之方法
FR3151939A1 (fr) Procédé de fabrication d’une couche contrainte
CN118077032A (zh) 用于在多晶SiC的载体衬底上制造包含单晶SiC的薄膜的复合结构体的方法
FR3165753A1 (fr) Procédé de fabrication d’une structure composite incluant une couche mince monocristalline transférée sur un substrat support

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902