TW202349454A - 複合結構及其製作方法 - Google Patents

複合結構及其製作方法 Download PDF

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Publication number
TW202349454A
TW202349454A TW112104269A TW112104269A TW202349454A TW 202349454 A TW202349454 A TW 202349454A TW 112104269 A TW112104269 A TW 112104269A TW 112104269 A TW112104269 A TW 112104269A TW 202349454 A TW202349454 A TW 202349454A
Authority
TW
Taiwan
Prior art keywords
carbon film
glassy carbon
composite structure
thin layer
substrate
Prior art date
Application number
TW112104269A
Other languages
English (en)
Chinese (zh)
Inventor
葛威塔茲 高爾丁
雨果 比阿德
Original Assignee
法商索泰克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 法商索泰克公司 filed Critical 法商索泰克公司
Publication of TW202349454A publication Critical patent/TW202349454A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • H10P90/1916Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Ceramic Products (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Laminated Bodies (AREA)
TW112104269A 2022-02-18 2023-02-07 複合結構及其製作方法 TW202349454A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR2201443 2022-02-18
FR2201443A FR3132976B1 (fr) 2022-02-18 2022-02-18 Structure composite et procede de fabrication associe

Publications (1)

Publication Number Publication Date
TW202349454A true TW202349454A (zh) 2023-12-16

Family

ID=81580657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112104269A TW202349454A (zh) 2022-02-18 2023-02-07 複合結構及其製作方法

Country Status (8)

Country Link
US (1) US20250140602A1 (https=)
EP (1) EP4479994A1 (https=)
JP (1) JP2025507250A (https=)
KR (1) KR20240154013A (https=)
CN (1) CN118696397A (https=)
FR (1) FR3132976B1 (https=)
TW (1) TW202349454A (https=)
WO (1) WO2023156193A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6371143B2 (ja) * 2014-07-08 2018-08-08 イビデン株式会社 SiCウェハの製造方法、SiC半導体の製造方法及び黒鉛炭化珪素複合基板
JP6371142B2 (ja) * 2014-07-08 2018-08-08 イビデン株式会社 SiCウェハの製造方法、SiC半導体の製造方法及び炭化珪素複合基板
US20180158672A1 (en) * 2015-06-25 2018-06-07 Tivra Corporation Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates

Also Published As

Publication number Publication date
CN118696397A (zh) 2024-09-24
FR3132976A1 (fr) 2023-08-25
KR20240154013A (ko) 2024-10-24
FR3132976B1 (fr) 2024-11-29
JP2025507250A (ja) 2025-03-18
US20250140602A1 (en) 2025-05-01
WO2023156193A1 (fr) 2023-08-24
EP4479994A1 (fr) 2024-12-25

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