FR3132976B1 - Structure composite et procede de fabrication associe - Google Patents
Structure composite et procede de fabrication associe Download PDFInfo
- Publication number
- FR3132976B1 FR3132976B1 FR2201443A FR2201443A FR3132976B1 FR 3132976 B1 FR3132976 B1 FR 3132976B1 FR 2201443 A FR2201443 A FR 2201443A FR 2201443 A FR2201443 A FR 2201443A FR 3132976 B1 FR3132976 B1 FR 3132976B1
- Authority
- FR
- France
- Prior art keywords
- layer
- polymer resin
- initial substrate
- composite structure
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Ceramic Products (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Laminated Bodies (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2201443A FR3132976B1 (fr) | 2022-02-18 | 2022-02-18 | Structure composite et procede de fabrication associe |
| PCT/EP2023/052346 WO2023156193A1 (fr) | 2022-02-18 | 2023-01-31 | Structure composite et procede de fabrication associe |
| CN202380021538.8A CN118696397A (zh) | 2022-02-18 | 2023-01-31 | 复合结构及其制造方法 |
| EP23702162.1A EP4479994A1 (fr) | 2022-02-18 | 2023-01-31 | Structure composite et procede de fabrication associe |
| JP2024541671A JP2025507250A (ja) | 2022-02-18 | 2023-01-31 | 複合構造および関連する製造プロセス |
| KR1020247031068A KR20240154013A (ko) | 2022-02-18 | 2023-01-31 | 복합 구조체 및 관련 제조 공정 |
| US18/837,681 US20250140602A1 (en) | 2022-02-18 | 2023-01-31 | Composite structure and manufacturing method thereof |
| TW112104269A TW202349454A (zh) | 2022-02-18 | 2023-02-07 | 複合結構及其製作方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2201443 | 2022-02-18 | ||
| FR2201443A FR3132976B1 (fr) | 2022-02-18 | 2022-02-18 | Structure composite et procede de fabrication associe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3132976A1 FR3132976A1 (fr) | 2023-08-25 |
| FR3132976B1 true FR3132976B1 (fr) | 2024-11-29 |
Family
ID=81580657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR2201443A Active FR3132976B1 (fr) | 2022-02-18 | 2022-02-18 | Structure composite et procede de fabrication associe |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250140602A1 (https=) |
| EP (1) | EP4479994A1 (https=) |
| JP (1) | JP2025507250A (https=) |
| KR (1) | KR20240154013A (https=) |
| CN (1) | CN118696397A (https=) |
| FR (1) | FR3132976B1 (https=) |
| TW (1) | TW202349454A (https=) |
| WO (1) | WO2023156193A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6371143B2 (ja) * | 2014-07-08 | 2018-08-08 | イビデン株式会社 | ＳｉＣウェハの製造方法、ＳｉＣ半導体の製造方法及び黒鉛炭化珪素複合基板 |
| JP6371142B2 (ja) * | 2014-07-08 | 2018-08-08 | イビデン株式会社 | ＳｉＣウェハの製造方法、ＳｉＣ半導体の製造方法及び炭化珪素複合基板 |
| US20180158672A1 (en) * | 2015-06-25 | 2018-06-07 | Tivra Corporation | Crystalline Semiconductor Growth on Amorphous and Poly-Crystalline Substrates |
-
2022
- 2022-02-18 FR FR2201443A patent/FR3132976B1/fr active Active
-
2023
- 2023-01-31 US US18/837,681 patent/US20250140602A1/en active Pending
- 2023-01-31 WO PCT/EP2023/052346 patent/WO2023156193A1/fr not_active Ceased
- 2023-01-31 JP JP2024541671A patent/JP2025507250A/ja active Pending
- 2023-01-31 EP EP23702162.1A patent/EP4479994A1/fr active Pending
- 2023-01-31 CN CN202380021538.8A patent/CN118696397A/zh active Pending
- 2023-01-31 KR KR1020247031068A patent/KR20240154013A/ko active Pending
- 2023-02-07 TW TW112104269A patent/TW202349454A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN118696397A (zh) | 2024-09-24 |
| FR3132976A1 (fr) | 2023-08-25 |
| KR20240154013A (ko) | 2024-10-24 |
| TW202349454A (zh) | 2023-12-16 |
| JP2025507250A (ja) | 2025-03-18 |
| US20250140602A1 (en) | 2025-05-01 |
| WO2023156193A1 (fr) | 2023-08-24 |
| EP4479994A1 (fr) | 2024-12-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 2 |
|
| PLSC | Publication of the preliminary search report |
Effective date: 20230825 |
|
| PLFP | Fee payment |
Year of fee payment: 3 |
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| PLFP | Fee payment |
Year of fee payment: 4 |
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| PLFP | Fee payment |
Year of fee payment: 5 |