JP2024533774A5 - - Google Patents
Info
- Publication number
- JP2024533774A5 JP2024533774A5 JP2024519335A JP2024519335A JP2024533774A5 JP 2024533774 A5 JP2024533774 A5 JP 2024533774A5 JP 2024519335 A JP2024519335 A JP 2024519335A JP 2024519335 A JP2024519335 A JP 2024519335A JP 2024533774 A5 JP2024533774 A5 JP 2024533774A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bonding
- process according
- polycrystalline sic
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2110520A FR3127843B1 (fr) | 2021-10-05 | 2021-10-05 | ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin |
| FR2110520 | 2021-10-05 | ||
| PCT/FR2022/051860 WO2023057709A1 (fr) | 2021-10-05 | 2022-10-03 | Procédé de transfert d'une couche de sic monocristallin sur un support en sic polycristallin utilisant une couche intermédiaire de sic polycristallin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024533774A JP2024533774A (ja) | 2024-09-12 |
| JP2024533774A5 true JP2024533774A5 (https=) | 2025-08-13 |
Family
ID=80122036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519335A Pending JP2024533774A (ja) | 2021-10-05 | 2022-10-03 | 多結晶ＳｉＣの中間層を使用して単結晶ＳｉＣの層を多結晶ＳｉＣキャリアに転写するためのプロセス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240392476A1 (https=) |
| EP (1) | EP4413612A1 (https=) |
| JP (1) | JP2024533774A (https=) |
| KR (1) | KR20240073106A (https=) |
| CN (1) | CN117999635A (https=) |
| FR (1) | FR3127843B1 (https=) |
| TW (1) | TW202318662A (https=) |
| WO (1) | WO2023057709A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116978783B (zh) * | 2023-09-25 | 2023-12-12 | 苏州芯慧联半导体科技有限公司 | 一种碳化硅衬底的制备方法及碳化硅衬底 |
| FR3153689A1 (fr) * | 2023-09-28 | 2025-04-04 | Soitec | Procédé de traitement d’un substrat de carbure de silicium |
| JP7825844B1 (ja) * | 2025-04-28 | 2026-03-09 | 国立大学法人東北大学 | 原子拡散接合法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2810448B1 (fr) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | Procede de fabrication de substrats et substrats obtenus par ce procede |
| FR3099637B1 (fr) * | 2019-08-01 | 2021-07-09 | Soitec Silicon On Insulator | procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin |
-
2021
- 2021-10-05 FR FR2110520A patent/FR3127843B1/fr active Active
-
2022
- 2022-09-12 TW TW111134355A patent/TW202318662A/zh unknown
- 2022-10-03 US US18/694,796 patent/US20240392476A1/en active Pending
- 2022-10-03 JP JP2024519335A patent/JP2024533774A/ja active Pending
- 2022-10-03 CN CN202280064913.2A patent/CN117999635A/zh active Pending
- 2022-10-03 EP EP22797422.7A patent/EP4413612A1/fr active Pending
- 2022-10-03 WO PCT/FR2022/051860 patent/WO2023057709A1/fr not_active Ceased
- 2022-10-03 KR KR1020247014805A patent/KR20240073106A/ko active Pending
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