JP2024536118A5 - - Google Patents
Info
- Publication number
- JP2024536118A5 JP2024536118A5 JP2024519070A JP2024519070A JP2024536118A5 JP 2024536118 A5 JP2024536118 A5 JP 2024536118A5 JP 2024519070 A JP2024519070 A JP 2024519070A JP 2024519070 A JP2024519070 A JP 2024519070A JP 2024536118 A5 JP2024536118 A5 JP 2024536118A5
- Authority
- JP
- Japan
- Prior art keywords
- surface layer
- substrate
- silicon carbide
- manufacturing process
- carrier substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2110493A FR3127842B1 (fr) | 2021-10-05 | 2021-10-05 | Structure composite comprenant une couche utile en sic monocristallin sur un substrat support en sic poly-cristallin et procede de fabrication de ladite structure |
| FR2110493 | 2021-10-05 | ||
| PCT/FR2022/051765 WO2023057699A1 (fr) | 2021-10-05 | 2022-09-20 | Structure composite comprenant une couche utile en sic monocristallin sur un substrat support en sic poly-cristallin et procede de fabrication de ladite structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024536118A JP2024536118A (ja) | 2024-10-04 |
| JP2024536118A5 true JP2024536118A5 (https=) | 2025-07-30 |
Family
ID=78649447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519070A Pending JP2024536118A (ja) | 2021-10-05 | 2022-09-20 | 多結晶ＳｉＣからなるキャリア基板上に単結晶ＳｉＣからなる機能層を備えている複合構造体及び前記構造体を製造するためのプロセス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240395603A1 (https=) |
| EP (1) | EP4413611A1 (https=) |
| JP (1) | JP2024536118A (https=) |
| CN (1) | CN118056263A (https=) |
| FR (1) | FR3127842B1 (https=) |
| TW (1) | TW202320128A (https=) |
| WO (1) | WO2023057699A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2798224B1 (fr) | 1999-09-08 | 2003-08-29 | Commissariat Energie Atomique | Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs. |
| FR2810448B1 (fr) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | Procede de fabrication de substrats et substrats obtenus par ce procede |
| JP6619874B2 (ja) | 2016-04-05 | 2019-12-11 | 株式会社サイコックス | 多結晶ＳｉＣ基板およびその製造方法 |
-
2021
- 2021-10-05 FR FR2110493A patent/FR3127842B1/fr active Active
-
2022
- 2022-09-20 US US18/694,369 patent/US20240395603A1/en active Pending
- 2022-09-20 WO PCT/FR2022/051765 patent/WO2023057699A1/fr not_active Ceased
- 2022-09-20 TW TW111135615A patent/TW202320128A/zh unknown
- 2022-09-20 CN CN202280067416.8A patent/CN118056263A/zh active Pending
- 2022-09-20 EP EP22789271.8A patent/EP4413611A1/fr active Pending
- 2022-09-20 JP JP2024519070A patent/JP2024536118A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11133185B2 (en) | Epitaxial lift-off process of graphene-based gallium nitride | |
| JP2018507562A5 (https=) | ||
| KR101063361B1 (ko) | 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 | |
| US4582559A (en) | Method of making thin free standing single crystal films | |
| WO2004033769A1 (en) | Fabrication method for crystalline semiconductor films on foreign substrates | |
| CN104649259A (zh) | 一种大单晶石墨烯及其制备方法 | |
| CN111362258A (zh) | 一种蜂蜡作支撑层的石墨烯薄膜转移方法 | |
| EP1940989B1 (en) | Method of releasing high temperature films and/or devices from metallic substrates | |
| CN101740358A (zh) | 在玻璃衬底上制备p型多晶硅薄膜的方法 | |
| CN113990739A (zh) | 基于范德华薄膜上的氧化镓外延层转印方法 | |
| JP2024533774A5 (https=) | ||
| JP2010157721A5 (https=) | ||
| CN108933193B (zh) | 一种铁磁半导体薄膜的转移方法及应用 | |
| US8987115B2 (en) | Epitaxial growth of silicon for layer transfer | |
| JP2024536118A5 (https=) | ||
| CN119920682B (zh) | 一种硒辅助干法转移晶圆尺寸二维半导体薄膜的方法 | |
| CN118731418B (zh) | 一种适用于扫描探针显微分析的层状材料转移方法 | |
| US20080268621A1 (en) | Method for manufacturing compound material wafer and corresponding compound material wafer | |
| CN111155065A (zh) | 一种六方氮化硼薄膜的制备剥离及转移方法 | |
| CN113981368B (zh) | 一种可以增强发光性能的类金刚石薄膜的制备方法 | |
| CN112725738A (zh) | 一种氧化铝薄膜、制备方法及其应用 | |
| CN113078044A (zh) | 一种介电材料的制备方法及半导体结构 | |
| CN117305979B (zh) | 一种基于氧化铝缓冲层的硅基单晶二维材料外延片及其制备方法 | |
| JP2015513214A (ja) | 多層金属支持体 | |
| JP2024533618A5 (https=) |