JP2024537777A5 - - Google Patents
Info
- Publication number
- JP2024537777A5 JP2024537777A5 JP2024519336A JP2024519336A JP2024537777A5 JP 2024537777 A5 JP2024537777 A5 JP 2024537777A5 JP 2024519336 A JP2024519336 A JP 2024519336A JP 2024519336 A JP2024519336 A JP 2024519336A JP 2024537777 A5 JP2024537777 A5 JP 2024537777A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- manufacturing according
- silicon carbide
- substrate
- surface layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2110624 | 2021-10-07 | ||
| FR2110626A FR3128056B1 (fr) | 2021-10-07 | 2021-10-07 | Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic poly-cristallin |
| FR2110626 | 2021-10-07 | ||
| FR2110624A FR3128057B1 (fr) | 2021-10-07 | 2021-10-07 | Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic poly-cristallin |
| PCT/FR2022/051774 WO2023057700A1 (fr) | 2021-10-07 | 2022-09-21 | Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic poly-cristallin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024537777A JP2024537777A (ja) | 2024-10-16 |
| JP2024537777A5 true JP2024537777A5 (https=) | 2025-07-17 |
Family
ID=83690271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024519336A Pending JP2024537777A (ja) | 2021-10-07 | 2022-09-21 | 多結晶ＳｉＣでできた担体基板上に単結晶ＳｉＣでできた薄層を含む複合構造を製作するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250006492A1 (https=) |
| EP (1) | EP4413613B1 (https=) |
| JP (1) | JP2024537777A (https=) |
| KR (1) | KR20240067134A (https=) |
| TW (1) | TW202331792A (https=) |
| WO (1) | WO2023057700A1 (https=) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0755068B1 (en) * | 1995-07-21 | 2003-06-04 | Canon Kabushiki Kaisha | Semiconductor substrate and process for production thereof |
| FR2810448B1 (fr) * | 2000-06-16 | 2003-09-19 | Soitec Silicon On Insulator | Procede de fabrication de substrats et substrats obtenus par ce procede |
-
2022
- 2022-09-21 KR KR1020247014814A patent/KR20240067134A/ko active Pending
- 2022-09-21 EP EP22789278.3A patent/EP4413613B1/fr active Active
- 2022-09-21 JP JP2024519336A patent/JP2024537777A/ja active Pending
- 2022-09-21 WO PCT/FR2022/051774 patent/WO2023057700A1/fr not_active Ceased
- 2022-09-21 US US18/697,809 patent/US20250006492A1/en active Pending
- 2022-09-22 TW TW111136001A patent/TW202331792A/zh unknown
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