FR3127843B1 - ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin - Google Patents

ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin Download PDF

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Publication number
FR3127843B1
FR3127843B1 FR2110520A FR2110520A FR3127843B1 FR 3127843 B1 FR3127843 B1 FR 3127843B1 FR 2110520 A FR2110520 A FR 2110520A FR 2110520 A FR2110520 A FR 2110520A FR 3127843 B1 FR3127843 B1 FR 3127843B1
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France
Prior art keywords
sic
polycrystalline
polycrystalline sic
monocrystalline
layer
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Active
Application number
FR2110520A
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English (en)
French (fr)
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FR3127843A1 (fr
Inventor
Ionut Radu
Hugo Biard
Gweltaz Gaudin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2110520A priority Critical patent/FR3127843B1/fr
Priority to TW111134355A priority patent/TW202318662A/zh
Priority to KR1020247014805A priority patent/KR20240073106A/ko
Priority to EP22797422.7A priority patent/EP4413612A1/fr
Priority to CN202280064913.2A priority patent/CN117999635A/zh
Priority to JP2024519335A priority patent/JP2024533774A/ja
Priority to PCT/FR2022/051860 priority patent/WO2023057709A1/fr
Priority to US18/694,796 priority patent/US20240392476A1/en
Publication of FR3127843A1 publication Critical patent/FR3127843A1/fr
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Publication of FR3127843B1 publication Critical patent/FR3127843B1/fr
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR2110520A 2021-10-05 2021-10-05 ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin Active FR3127843B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2110520A FR3127843B1 (fr) 2021-10-05 2021-10-05 ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin
TW111134355A TW202318662A (zh) 2021-10-05 2022-09-12 應用多晶碳化矽中間層將單晶碳化矽層移轉到多晶碳化矽載體底材上之方法
EP22797422.7A EP4413612A1 (fr) 2021-10-05 2022-10-03 Procédé de transfert d'une couche de sic monocristallin sur un support en sic polycristallin utilisant une couche intermédiaire de sic polycristallin
CN202280064913.2A CN117999635A (zh) 2021-10-05 2022-10-03 使用多晶sic中间层将单晶sic层转移到多晶sic载体上的方法
KR1020247014805A KR20240073106A (ko) 2021-10-05 2022-10-03 다결정 sic의 중간층을 사용하여 단결정 sic의 층을 다결정 sic 캐리어로 전달하는 방법
JP2024519335A JP2024533774A (ja) 2021-10-05 2022-10-03 多結晶ＳｉＣの中間層を使用して単結晶ＳｉＣの層を多結晶ＳｉＣキャリアに転写するためのプロセス
PCT/FR2022/051860 WO2023057709A1 (fr) 2021-10-05 2022-10-03 Procédé de transfert d'une couche de sic monocristallin sur un support en sic polycristallin utilisant une couche intermédiaire de sic polycristallin
US18/694,796 US20240392476A1 (en) 2021-10-05 2022-10-03 Method for transferring a monocrystalline sic layer onto a polycrystalline sic carrier using a poly crystalline sic intermediate layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2110520A FR3127843B1 (fr) 2021-10-05 2021-10-05 ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin
FR2110520 2021-10-05

Publications (2)

Publication Number Publication Date
FR3127843A1 FR3127843A1 (fr) 2023-04-07
FR3127843B1 true FR3127843B1 (fr) 2023-09-08

Family

ID=80122036

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2110520A Active FR3127843B1 (fr) 2021-10-05 2021-10-05 ProcÉdÉ de transfert d’une couche de SiC monocristallin sur un support en SiC polycristallin utilisant une couche intermÉdiaire de SiC polycristallin

Country Status (8)

Country Link
US (1) US20240392476A1 (https=)
EP (1) EP4413612A1 (https=)
JP (1) JP2024533774A (https=)
KR (1) KR20240073106A (https=)
CN (1) CN117999635A (https=)
FR (1) FR3127843B1 (https=)
TW (1) TW202318662A (https=)
WO (1) WO2023057709A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116978783B (zh) * 2023-09-25 2023-12-12 苏州芯慧联半导体科技有限公司 一种碳化硅衬底的制备方法及碳化硅衬底
FR3153689A1 (fr) * 2023-09-28 2025-04-04 Soitec Procédé de traitement d’un substrat de carbure de silicium
JP7825844B1 (ja) * 2025-04-28 2026-03-09 国立大学法人東北大学 原子拡散接合法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
FR3099637B1 (fr) * 2019-08-01 2021-07-09 Soitec Silicon On Insulator procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin

Also Published As

Publication number Publication date
US20240392476A1 (en) 2024-11-28
EP4413612A1 (fr) 2024-08-14
TW202318662A (zh) 2023-05-01
CN117999635A (zh) 2024-05-07
FR3127843A1 (fr) 2023-04-07
WO2023057709A1 (fr) 2023-04-13
JP2024533774A (ja) 2024-09-12
KR20240073106A (ko) 2024-05-24

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