FR3114909B1 - Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium - Google Patents

Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium Download PDF

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FR3114909B1
FR3114909B1 FR2010206A FR2010206A FR3114909B1 FR 3114909 B1 FR3114909 B1 FR 3114909B1 FR 2010206 A FR2010206 A FR 2010206A FR 2010206 A FR2010206 A FR 2010206A FR 3114909 B1 FR3114909 B1 FR 3114909B1
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layer
substrate
semi
insulating
bonding
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FR3114909A1 (fr
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Eric Guiot
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Soitec SA
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Soitec SA
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Priority to FR2010206A priority Critical patent/FR3114909B1/fr
Priority to TW110128374A priority patent/TW202215504A/zh
Priority to KR1020237015262A priority patent/KR20230080476A/ko
Priority to CN202180067958.0A priority patent/CN116438629A/zh
Priority to PCT/FR2021/051709 priority patent/WO2022074318A1/fr
Priority to EP21801585.7A priority patent/EP4226409A1/fr
Priority to US18/248,169 priority patent/US20230411140A1/en
Priority to JP2023517668A priority patent/JP2023542884A/ja
Publication of FR3114909A1 publication Critical patent/FR3114909A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L’invention concerne un procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’alliage III-N à base de gallium, comprenant les étapes successives suivantes : - fourniture d’un substrat donneur (10) de carbure de silicium semi-isolant monocristallin,- implantation d’espèces ioniques dans le substrat donneur (10) de sorte à former une zone de fragilisation (12) délimitant une couche mince (11) de SiC semi-isolant monocristallin à transférer,- collage du substrat donneur (10) sur un premier substrat receveur (20) par l’intermédiaire d’une couche de collage (21),- détachement du substrat donneur (10) le long de la zone de fragilisation (12) de sorte à transférer la couche mince (11) de SiC semi-isolant monocristallin sur le premier substrat receveur (20),- formation d’une couche additionnelle (13) de SiC semi-isolant sur la couche mince (11) transférée,- collage de la couche additionnelle (13) sur un second substrat receveur (40) présentant une haute résistivité électrique, - retrait d’au moins une partie de la couche de collage (21) de sorte à détacher le premier substrat receveur (20) et exposer la couche (11) de SiC semi-isolant monocristallin transférée. Figure pour l’abrégé : Fig 8
FR2010206A 2020-10-06 2020-10-06 Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium Active FR3114909B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2010206A FR3114909B1 (fr) 2020-10-06 2020-10-06 Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium
TW110128374A TW202215504A (zh) 2020-10-06 2021-08-02 製作用於磊晶生長基於鎵之ｉｉｉ族氮化物合金層之底材之方法
CN202180067958.0A CN116438629A (zh) 2020-10-06 2021-10-04 制造用于外延生长基于镓的iii-n合金层的基板的方法
PCT/FR2021/051709 WO2022074318A1 (fr) 2020-10-06 2021-10-04 Procédé de fabrication d'un substrat pour la croissance épitaxiale d'une couche d'un alliage iii-n à base de gallium
KR1020237015262A KR20230080476A (ko) 2020-10-06 2021-10-04 갈륨계 ⅲ-n 합금층의 에피택셜 성장을 위한 기판 제조 방법
EP21801585.7A EP4226409A1 (fr) 2020-10-06 2021-10-04 Procédé de fabrication d'un substrat pour la croissance épitaxiale d'une couche d'un alliage iii-n à base de gallium
US18/248,169 US20230411140A1 (en) 2020-10-06 2021-10-04 Method for producing a substrate for epitaxial growth of a gallium-based iii-n alloy layer
JP2023517668A JP2023542884A (ja) 2020-10-06 2021-10-04 ガリウムベースのｉｉｉ－ｎ合金の層をエピタキシャル成長させるための基板を製造するための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2010206A FR3114909B1 (fr) 2020-10-06 2020-10-06 Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium
FR2010206 2020-10-06

Publications (2)

Publication Number Publication Date
FR3114909A1 FR3114909A1 (fr) 2022-04-08
FR3114909B1 true FR3114909B1 (fr) 2023-03-17

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ID=74125387

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FR2010206A Active FR3114909B1 (fr) 2020-10-06 2020-10-06 Procédé de fabrication d’un substrat pour la croissance épitaxiale d’une couche d’un alliage III-N à base de gallium

Country Status (8)

Country Link
US (1) US20230411140A1 (fr)
EP (1) EP4226409A1 (fr)
JP (1) JP2023542884A (fr)
KR (1) KR20230080476A (fr)
CN (1) CN116438629A (fr)
FR (1) FR3114909B1 (fr)
TW (1) TW202215504A (fr)
WO (1) WO2022074318A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
FR2877491B1 (fr) * 2004-10-29 2007-01-19 Soitec Silicon On Insulator Structure composite a forte dissipation thermique
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device

Also Published As

Publication number Publication date
US20230411140A1 (en) 2023-12-21
CN116438629A (zh) 2023-07-14
TW202215504A (zh) 2022-04-16
KR20230080476A (ko) 2023-06-07
JP2023542884A (ja) 2023-10-12
EP4226409A1 (fr) 2023-08-16
FR3114909A1 (fr) 2022-04-08
WO2022074318A1 (fr) 2022-04-14

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