CN219350196U - 一种改善滑移线的石墨基座结构及设备 - Google Patents
一种改善滑移线的石墨基座结构及设备 Download PDFInfo
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- CN219350196U CN219350196U CN202320185482.7U CN202320185482U CN219350196U CN 219350196 U CN219350196 U CN 219350196U CN 202320185482 U CN202320185482 U CN 202320185482U CN 219350196 U CN219350196 U CN 219350196U
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 73
- 239000010439 graphite Substances 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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CN202320185482.7U CN219350196U (zh) | 2023-02-08 | 2023-02-08 | 一种改善滑移线的石墨基座结构及设备 |
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CN202320185482.7U CN219350196U (zh) | 2023-02-08 | 2023-02-08 | 一种改善滑移线的石墨基座结构及设备 |
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CN219350196U true CN219350196U (zh) | 2023-07-14 |
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Effective date of registration: 20240604 Address after: 201203 zone B, building 3, No. 168, Huatuo Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai Patentee after: TANG OPTOELECTRONICS EQUIPMENT CO.,LTD. Country or region after: China Patentee after: Zhongsheng Semiconductor (Shanghai) Co.,Ltd. Address before: 201203 zone B, building 3, No. 168, Huatuo Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai Patentee before: TANG OPTOELECTRONICS EQUIPMENT CO.,LTD. Country or region before: China |